1060 nm GaAs Laser Diode
Abstract: TEM00 5d-fb
Text: DATA SHEET EYP-DFB-1060-00040-1500-BFY02-0000 Version 1.02 2009-01-07 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1060 nm DFB Laser with hermetic Butterfly Housing
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EYP-DFB-1060-00040-1500-BFY02-0000
1060 nm GaAs Laser Diode
TEM00
5d-fb
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1060 nm GaAs Laser Diode
Abstract: 1060 nm semiconductor laser injection laser diode
Text: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-1060-00500-3006-CMT03-0000 General Product Information Product Application 1060 nm Tapered Amplifier
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EYP-TPA-1060-00500-3006-CMT03-0000
1060 nm GaAs Laser Diode
1060 nm
semiconductor laser
injection laser diode
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1060 nm GaAs Laser Diode
Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000
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EYP-RWE-1060-10020-0750-SOT01-0000
1060 nm GaAs Laser Diode
ridge waveguide semiconductor laser
tunable laser diode
GaAs diode nm
laser diode lifetime
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1060 nm GaAs Laser Diode
Abstract: GaAs diode nm TEM00
Text: 0.91 31.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-SOT02-0000 General Product Information Product
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EYP-DFB-1060-00150-1500-SOT02-0000
1060 nm GaAs Laser Diode
GaAs diode nm
TEM00
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GaAs diode nm
Abstract: TEM00 1060 nm GaAs Laser Diode
Text: Version 0.91 31.01.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DFB Laser EYP-DFB-1060-00150-1500-TOC03-0000 General Product Information
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EYP-DFB-1060-00150-1500-TOC03-0000
GaAs diode nm
TEM00
1060 nm GaAs Laser Diode
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1060 nm GaAs Laser Diode
Abstract: No abstract text available
Text: Ridge Waveguide Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR mA 200 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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EYP-RWL-1060-00100-0750-SOT01-0000
1060 nm GaAs Laser Diode
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1060 nm GaAs Laser Diode
Abstract: LC100-S
Text: LASER DIODE LC-100S-1060D LC-100S-1060D is AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-100S-1060D is a CW single mode injection semiconductor laser with built-in monitor photodiode to
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LC-100S-1060D
LC-100S-1060D
100s-1060d
1060 nm GaAs Laser Diode
LC100-S
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1060 nm GaAs Laser Diode
Abstract: 1055 NM1055
Text: Broad Area Laser GaAs Semiconductor Laser Diode Absolute Maximum Ratings Operational Temperature at case Symbol TC Unit °C IF VR A 3,5 V Forward Current Reverse Voltage min typ max 50 Stress in excess of the Absolute Maximum Ratings can cause permanent damage to the
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CMT02
EYP-BAL-1060-02000-2010-CMT02-0000
1060 nm GaAs Laser Diode
1055
NM1055
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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Untitled
Abstract: No abstract text available
Text: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED
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TLP1031,
TLP1033
TLP1037
TLP1031
TLP1037
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5252 F led
Abstract: P1031 5252 F 1002 P-1031 p1037 tl 701 amp diagram
Text: New Product Guide Low Power Consumption, Short-Lead Photointerrupter Photo-IC Output Type TLP1031, TLP1033 and TLP1037 Low power consumption, short-lead photointerrupter (photo-IC output type) TLP1031•TLP1033•TLP1037 Maximum Ratings (Ta = 2 Rating LED
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TLP1031,
TLP1033
TLP1037
TLP1031
TLP1037
5252 F led
P1031
5252 F 1002
P-1031
p1037
tl 701 amp diagram
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TLP1240
Abstract: No abstract text available
Text: New Product Guide Compact Photointerrupter with Connector TLP1240/TLP1250 Overview The TLP1240 series and TLP1250 series are small-size photointerrupters with built-in connectors. They feature enhanced mountability in a variety of equipment. With unique new package style developed by Toshiba, these photointerrupters offer improved reliability and a high
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TLP1240/TLP1250
TLP1240
TLP1250
TLP1254
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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TFK 7 segment displays
Abstract: TFK 609 7-segment display tfk "seven segment display" tfk tfk 648 TFK BPW 41 N smd code marking Ld50 tfk 605 TFK 7 segment d 350 28 tfk 727
Text: LEDs and Displays Data Book 1996 TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TORX142
Abstract: TOTX1701 TOTX142 todx2701 toslink transmitter JIS F05 connectors Mini Toslink Receiver torx1701 TOSLINK* package TODX2404
Text: 2005-7 PRODUCT GUIDE Fiber-Optic Devices TOSLINK semiconductor http://www.semicon.toshiba.co.jp/eng TM TOSLINK Optical Transmission Devices TOSLINK™ is a family of data transmission devices that use optical signals instead of electrical signals. Because TOSLINK uses an optical fiber cable as
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BCE0037A
TORX142
TOTX1701
TOTX142
todx2701
toslink transmitter
JIS F05 connectors
Mini Toslink Receiver
torx1701
TOSLINK* package
TODX2404
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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DIN 18541
Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db2101-0409
DIN 18541
Opto Coupler TLP 621
ic 741 clamper
LM 10841
IEC 60061-1
TLHY46
smd glass zener diode color codes
TDC 310 NTC
an 17807 a
Opto Coupler TLP 521
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SG1009A
Abstract: SG1009AF C30116 SG1002 ca3013 C3001 g2005 OP-10 OP-18 C30119
Text: Features SG1009 •Half-angle beam spread of 8 ° for SG1009, SG1009A 30° for SG1009A/F C30119, C30123 •Frequency response of 150 MHz for C30119, 50 MHz for C30123 SG1002, SG1003, SG1004 •Compact design for closely spaced PC-board mounting •1 5 ° half-angle beam spread (50% intensity
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OP-10
SG1009:
SG1002
SG1003
SG1004
SG1009
SG1009A*
SG1010
SG1010A*
OP-18
SG1009A
SG1009AF
C30116
ca3013
C3001
g2005
C30119
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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