Emitter
Abstract: APG2C1-1050 tip 1050
Text: APG2C1-1050 IR High Power single chip LED APG2C1-1050 is a GaAlAs based, high power 1050 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1050 nm Optical Output Power: typ. 50 mW
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APG2C1-1050
APG2C1-1050
Emitter
tip 1050
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Untitled
Abstract: No abstract text available
Text: TXPI 1207 1050 nm Light Emitting Diode Surface Mount 1206 Style DESCRIPTION FEATURES This is a 1050 nm Infrared 1206 package surface mount LED optimized for applications requiring a small, Infrared LED. 1050 nm Infrared emission 0.3 mw typical Output Power
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Abstract: No abstract text available
Text: SMB1N-1050 v 1.0 03.10.2014 Description SMB1N-1050 is a surface mount AlGaAsP High Power LED with a typical peak wavelength of 1050 nm and radiation of 45 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.
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SMB1N-1050
SMB1N-1050
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED
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L850/940/1050-40C00
L850/940/1050-40C
940nm)
1050nm)
1050nm
940nm
850nm
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED
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L850/940/1050-40C00
L850/940/1050-40C
940nm)
1050nm)
1050nm
940nm
850nm
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Untitled
Abstract: No abstract text available
Text: TXPI 1027 Indium Gallium Arsenide Phosphide 1050 nm Light Emitting Diode DESCRIPTION This is a high radiance InGaAs IR LED for applications requiring 1050 nm emission and a fast response time. FEATURES 12 Degree Half Angle of light emission High Electrical Bandwidth/Fast response time
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-65oC
125oC
-40oC
260oC,
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BRM-1050
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BRM-1050 INFRARED RECEIVER MODULE ● Description 1. The BRM-1050 is miniaturized infrared receivers for remote control and other applications requiring ●Package Dimensions: improved ambient light rejection. 2. The separate PIN diode and preamplifier IC are
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BRM-1050
BRM-1050
1250pcs
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Abstract: No abstract text available
Text: Outdoor-XUPs ~ 1050 watts, 230 vac, UPS with voltage regulation, 1500AHV/1500BHV Outdoor XUPs Series 230 vac outdoor uninterruptible power system Outdoor XUPs Outdoor XUPs model 1500AHV 1500 VA 1050 watts 230 vac 45 min @1050W 1.7 hrs @525W -20° to +60°C;
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1500AHV/1500BHV
1500AHV
1500BHV
XUPs-1500AHV/BHV
610mm
406mm
102mm
Outdoor-XUPs-1050W-230-vac-UPS
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TLGH1050
Abstract: TLYH1050 750H ST-100S TLFGH1050
Text: TL RMH,SH,OH,YH,GH,FGH 1050(T20) TOSHIBA LED Lamp TL(RMH,SH,OH,YH,GH,FGH)1050(T20) ○Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm size • TL□H1050 (T20) Series • InGaAℓP LEDs • High Luminous consumption • Colors :Red, Orange, Yellow, Green
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TLH1050
TLGH1050
TLYH1050
750H
ST-100S
TLFGH1050
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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A2100-A
Abstract: IC-105
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 M8 18 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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US015
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Crystal Oscillators 3.57MHz
Abstract: Quartz Crystal Oscillators 3.57MHz crystal oscillator 3.57MHz Quartz Crystals 12 Mhz Kyocera pbrc-b Piezo Electric Quartz Crystals Motorola 801 cordless phone KXO-01 Kyocera kxo-01 479M
Text: Table of Contents CERAMIC RESONATORS General Description . 2-7 KBR -Y Series - Surface Mountable — fo: 380 to 1050 kHz . 8-9
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200mm
Crystal Oscillators 3.57MHz
Quartz Crystal Oscillators 3.57MHz
crystal oscillator 3.57MHz
Quartz Crystals 12 Mhz
Kyocera pbrc-b
Piezo Electric Quartz Crystals
Motorola 801 cordless phone
KXO-01
Kyocera kxo-01
479M
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avalanche photodiode bias
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
avalanche photodiode bias
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE23
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SAE500NX
Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
SAE500NX
avalanche photodiode noise factor
0E-07
m8 smd
rise time avalanche photodiode
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SAE500
Abstract: SAE230NS SAE230NX SAE500NX rangefinding SAE230 SAE500NS
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
SAE500
SAE230NX
SAE500NX
rangefinding
SAE230
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE23
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RLT1050M-500G
Abstract: No abstract text available
Text: RLT1050M-500G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1050 nm Optical Ouput Power: 500 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN
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RLT1050M-500G
RLT1050M-500G
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Untitled
Abstract: No abstract text available
Text: ;POUEREX INC 74 D e | VET Mb SI DDOlll? 3 5 .2 Condensed Electrical And Thermal Characteristics And Ratings j GETYPE C440 C702 C703* — C390 x 500 — 100-600 500-1300 2000-3200 2000-2800 — 1300 800 @ 70°C 1400 850 @ 75°C 1570 1050 @ 70°C 1570 1050 @ 70°C
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non50
MAX/10
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DT63-400
Abstract: DT74-250 DT34-500 DT48-950 DT600-500 DT63-500 DT74-350 u800 diode DT600-450 tc40u
Text: PUW ERLIIME IMPIM C ase O utline Device Type TCD30/U-800 TCD30/U-1000 •TC1-800 TC15/U-800 TC15/U-1000 •TC35/40U-250 •TC35/40U-300 •TC35/40U-400 TS/DT36-300 TS/DT34-500 TS/DT32-1050 DT46-1100 DT46-1200 DT47-1000 DT47-1050 DT48-850 DT48-950 DT51-700
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TCD30/U-800
T0-3/S028
125/2C
TCD30/U-1000
TC1-800
TC15/U-800
TC15/U-1000
DT63-400
DT74-250
DT34-500
DT48-950
DT600-500
DT63-500
DT74-350
u800 diode
DT600-450
tc40u
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