DO-213AA
Abstract: 103A
Text: LL 103A . LL 103C Silizium-Schottky-Dioden für die Oberflächenmontage Surface Mount Si-Schottky Barrier Diodes Nominal current Nennstrom ±0.1 0.3 Type 3.5 ±0.1 0.3 ±0.1 1.45 Dimensions / Maße in mm 0.2 A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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DO-213AA
125/C
175/C
DO-213AA
103A
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C67070-A2516-A67
Abstract: No abstract text available
Text: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67
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C67070-A2516-A67
150hnical
C67070-A2516-A67
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bsm 75 gd 120 dn2
Abstract: bsm 75 gd 120 dn2 diagram
Text: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67
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C67070-A2516-A67
Oct-20-1997
bsm 75 gd 120 dn2
bsm 75 gd 120 dn2 diagram
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C67070-A2516-A67
Abstract: 260-D
Text: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67
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C67070-A2516-A67
150cation
C67070-A2516-A67
260-D
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Untitled
Abstract: No abstract text available
Text: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67
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C67070-A2516-A67
Oct-01-2003
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bsm 75 gd 120 dn2
Abstract: C67070-A2516-A67
Text: BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC BSM 75 GD 120 DN2 1200V 103A Package Ordering Code ECONOPACK 3
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C67070-A2516-A67
Mar-27-1996
bsm 75 gd 120 dn2
C67070-A2516-A67
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Eupec BSM
Abstract: C67070-A2516-A67 bsm 75 gd 120 dn2 bsm 75 gd 120 dn2 diagram
Text: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67
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C67070-A2516-A67
150suant
Eupec BSM
C67070-A2516-A67
bsm 75 gd 120 dn2
bsm 75 gd 120 dn2 diagram
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Untitled
Abstract: No abstract text available
Text: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT100F50J
390ns
E145592TOPÂ
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Untitled
Abstract: No abstract text available
Text: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT100M50J
E145592
APT100M50J
OT-227
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isotop mosfet 100V
Abstract: APT100M50J MIC4452 A1490
Text: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT100M50J
E145592
isotop mosfet 100V
APT100M50J
MIC4452
A1490
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MIC4452
Abstract: APT100F50J
Text: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT100F50J
390ns
E145592
MIC4452
APT100F50J
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Untitled
Abstract: No abstract text available
Text: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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PDF
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APT100M50J
E145592
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Untitled
Abstract: No abstract text available
Text: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT100F50J
390ns
E145592
OT-227
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103b
Abstract: 30V 200mA schottky barrier diode 103A DIODE LS103A 103A
Text: LS103A / 103B / 103C Small Signal Schottky Barrier Diodes Features Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters
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LS103A
OD-80)
200mA
200mA,
103b
30V 200mA schottky barrier diode
103A DIODE
103A
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103A
Abstract: APT0502 APT0601 APTM120UM95FAG
Text: APTM120UM95FAG Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120UM95FAG
APTM120UM95FAG
103A
APT0502
APT0601
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irfp4568pbf
Abstract: No abstract text available
Text: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
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IRFP4568PbF
O-247AC
O-247AC
irfp4568pbf
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IRFP4568
Abstract: IRFP4568PBF DM 103A 103A irf 151 AN-994
Text: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
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IRFP4568PbF
O-247AC
O-247AC
IRFP4568
IRFP4568PBF
DM 103A
103A
irf 151
AN-994
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103A
Abstract: c 103 mosfet
Text: APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120UM95F-AlN
APTM120UM95F
103A
c 103 mosfet
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FUSE M8 250v G
Abstract: BA100 diode cr6l-50 CR6L-350 FUSE FUJI AHX2915 blown fuse indicator with alarm BLC075-1 CS10F-100 CR2L-300
Text: Low Voltage Fuses BLC, CR and CS types Super Rapid Fuses BLC, CR and CS types Super Rapid Fuses 150–1500 Volts AC 10–4700 Amps • Description The FUJI BLC, CR and CS types are extremely reliable fuses which have been specially developed to provide protection for silicon diodes and
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400A2
2L-260)
FUSE M8 250v G
BA100 diode
cr6l-50
CR6L-350
FUSE FUJI
AHX2915
blown fuse indicator with alarm
BLC075-1
CS10F-100
CR2L-300
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30V 200mA schottky barrier diode
Abstract: 103B sd103 diodes
Text: SD103A thru SD103C Small-Signal Diode Schottky Diodes Features For general purpose applications The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal
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SD103A
SD103C
SD103
LL103A
LL103C.
DO-35
200mA
200mA,
30V 200mA schottky barrier diode
103B
sd103 diodes
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRFP4568
AUIRFP4568-E
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module siemens EM 235
Abstract: siemens EM 235 siemens igbt BSM 100 siemens igbt BSM 100 gd siemens igbt
Text: SIEMENS BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM 75 GD 120 DN2 LU Type h 1200V 103A Package Ordering Code ECONOPACK 3
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OCR Scan
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BSM75
module siemens EM 235
siemens EM 235
siemens igbt BSM 100
siemens igbt BSM 100 gd
siemens igbt
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bsm 75 gd 120 dn2
Abstract: GD 150 R 1200
Text: euoec F BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67
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OCR Scan
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0ct-20-1997
GM105876
bsm 75 gd 120 dn2
GD 150 R 1200
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S0103A
Abstract: SD103A SD103B SD103C
Text: SD103A “ SD103C SCHOTTKY BARRIER DIODE LITEMZI y POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I Mechanical Data_ • •
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SD103A
SD103C
DO-35,
MIL-STD-202,
DO-35
SD103B
SD103C
DS11009
SD103A-
S0103A
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