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    Vishay Intertechnologies RWM04103001GA20E1

    Rwm* 4X10 3K 2% Am500 E1 |Vishay RWM04103001GA20E1
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    Newark RWM04103001GA20E1 Bulk 500
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    103001G Datasheets Context Search

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    Abstract: MN103001G MN1030F01K
    Text: □ 103001G / MN1030F01K M N 103001G / M N 1030F01K 1 Type 1 Command RAM x64-bit 1 2 8 K /2 5 6 K (Flash) 1 Data RAM (x32-bit) 8K 1 Minimum Instruction Execution Time 16.7ns (at 3 .3 V , 60M H z) 1 Interrupts •R E S E T * IR Q x 8 • NMI • T im e r x18 • SIF x8 - W D T * A /D « S yste m e rror


    OCR Scan     		PDF MN103001G MN1030F01K x64-bit) 128K/256K x32-bit) 60MHz) 32-bit IOCLK/32, output toggle MN1030F01K

    MN103001G

    Abstract: MN1030F01K F01K
    Text: □ 103001G / F01K 103001G / F01K under development • Type 1 Command ROM (x64-Bit) 1 Data RAM (x32-Bit) 1 Minimum Instruction Execution Time 128 K B /256 KB (Flash) 8 KB 103001G: 17 ns (at 3.3 V, 60 MHz) MN1030F01K: 25 ns (at 3.3 V, 40 MHz) (under development)


    OCR Scan     		PDF MN103001G x64-Bit) KB/256 MN103001G: MN1030F01K: 32-Bit IOCLK/32, P80/AN0/IRQ4 MN1030F01K F01K