102 m5c
Abstract: 103 m5c
Text: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package
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Original
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MA3SD05
SC-89
PG-10N)
SAS-8130)
102 m5c
103 m5c
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PDF
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102 m5c
Abstract: 103 m5c MA4SD05X
Text: Schottky Barrier Diodes SBD MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density mounting Optimum for high frequency rectification because of its short reverse recovery
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Original
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MA4SD05X
102 m5c
103 m5c
MA4SD05X
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward Single current Series Non-repetitive peak Single 300 IFSM
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Original
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MA3SD05F
SC-81
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PDF
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MA5J002D
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible
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Original
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2002/95/EC)
MA5J002D
MA5J002D
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
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PDF
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MA3SD05F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward
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Original
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2002/95/EC)
MA3SD05F
SC-81
MA3SD05F
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PDF
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MA5J002D
Abstract: marking m5c
Text: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible • Ideal for surge voltage absorption 1 2 5˚ 1.25±0.1
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Original
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MA5J002D
MA5J002D
marking m5c
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
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PDF
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103 m5c
Abstract: MA3SD05F marking m5c
Text: Schottky Barrier Diodes SBD MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Double Peak forward Single current Double Non-repetitive peak Single 300 IFSM
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Original
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MA3SD05F
SC-81
103 m5c
MA3SD05F
marking m5c
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PDF
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MA5J002D
Abstract: No abstract text available
Text: Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuit 0.7±0.1 • S-Mini type 5-pin package • Includes 4 elements of annode common connection • Parts reduction is possible • Ideal for surge voltage absorption
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Original
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MA5J002D
MA5J002D
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PDF
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marking m5c
Abstract: MA3SD05 SC-89
Text: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 1.60±0.05 (0.44) 1 2 (0.80) 3 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package
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Original
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MA3SD05
marking m5c
MA3SD05
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of anode common connection • Parts reduction is possible
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Original
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2002/95/EC)
MA5J002D
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 Maximum peak reverse voltage Single Symbol Rating Unit VR 45 V VRM 45 V IF 100 mA Series Peak forward
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Original
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2002/95/EC)
MA3SD05F
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PDF
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MA4SD05X
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
MA4SD05X
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible • Code
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Original
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2002/95/EC)
MA3SD05FG
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PDF
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MA3SD05F
Abstract: marking m5c
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05F Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high frequency rectification • Features (0.44) M Di ain sc te on na tin nc ue e/ d 0.12+0.05
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Original
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2002/95/EC)
MA3SD05F
SC-81
MA3SD05F
marking m5c
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PDF
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MA3SD05FG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3SD05FG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Features ■ Package • Series connection • High-density mounting is possible
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Original
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2002/95/EC)
MA3SD05FG
MA3SD05FG
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PDF
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MA5J002D
Abstract: marking m5c
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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Original
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2002/95/EC)
MA5J002D
MA5J002D
marking m5c
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 1 2 VR Maximum peak reverse voltage VRM Forward current *1 IF
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Original
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2002/95/EC)
MA4SD05X
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PDF
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MA4SD05X
Abstract: marking m5c
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD05X Silicon epitaxial planar type For high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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Original
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2002/95/EC)
MA4SD05X
MA4SD05X
marking m5c
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PDF
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MA5J002D
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA5J002D Silicon epitaxial planar type Unit: mm 2.0±0.1 0.7±0.1 (0.65) (0.65) 5 4 1.25±0.1 2.1±0.1 • Features 1 2 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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Original
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2002/95/EC)
MA5J002D
MA5J002D
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PDF
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GT300AL-20
Abstract: GT300AL GT300AL-16 GT300AL-24 GT300AL16 GT300AL20
Text: 100 - - = • UJ ~K > o£i/Íl 300 A : rh - j m ¡ S +* ¡i-: : ib í-ü ? 7 * 16, lili V ¡ T 3 0 0 A L -16 G T 3 0 0 A L -20 1 ¡TQR.M 300 1 7> 150 p ‘t 32: ¿ & * ó á . f lt iíW .í : * v ^ — 125°C, 2500 : 6 0 H z . 2 6 X 103 rj¡ Aj /= 2 1000
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OCR Scan
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GT300AL
GT300AL-16
GT300AL-20
GT300AL-24
GT300AI.
7W25T,
26X103
H-101
GT300AL
GT300AL16
GT300AL20
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PDF
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alps tc 103b
Abstract: LM 9015 CC11VCA CC11VCD CF11VCA CF11VCD CF11VCF
Text: — 103 — a • W B H ft* C C I IV 'J * 9 Æ H -2 7 r ü ffle o iÊ f lf c # ^ M Â H W tt ¡fC nil ?■ ccnvcA CC11VCD 2000 2300 V'dâ .W /mv> /T RMS I tsm 600 200 30 V g fm V A 5 6 A ! fis -40-125 !± m n 1800(Min) V er r ,= 2 5 °C , ^ f’t' Min T yp
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OCR Scan
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-103-a
CC11VCA
CC11VCD
H-101
alps tc 103b
LM 9015
CF11VCA
CF11VCD
CF11VCF
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PDF
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B1140
Abstract: Intelatech
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest
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OCR Scan
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25FL-,
B1140
Intelatech
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PDF
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