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    102N20 Search Results

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    102N20 Price and Stock

    IXYS Corporation IXTQ102N20T

    MOSFET N-CH 200V 102A TO3P
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    DigiKey IXTQ102N20T Tube
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    IXYS Corporation IXTH102N20T

    MOSFET N-CH 200V 102A TO247
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    Mouser Electronics IXTH102N20T
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    IXYS Corporation IXTC102N20T

    MOSFET N-CH 200V ISOPLUS220
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    DigiKey IXTC102N20T Tube
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    ABLIC Inc. S-19102N20H-M5T1U

    LINEAR IC
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    DigiKey S-19102N20H-M5T1U Reel 3,000
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    Avnet Americas S-19102N20H-M5T1U Reel 3,000
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    Mouser Electronics S-19102N20H-M5T1U
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    TDK Corporation B82725J2102N20

    Current-Compensated Ring Core Double Choke 68mH 1A 1050mOhm 30% Radial Leaded Tray - Trays (Alt: B82725J2102N020)
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    Avnet Americas B82725J2102N20 Tray 9 Weeks 320
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    Find more 102N20 price and stock on Findchips.com

    102N20 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    102N20 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    102N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    102N20

    Abstract: 3RH1140-1AD00 Directed Energy
    Text: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375X2 102N20 150oC 102N20 3RH1140-1AD00 Directed Energy

    nec 2401

    Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
    Text: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A

    mosfet 62N

    Abstract: 400P DE475-102N20A 102N20
    Text: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE475-102N20A mosfet 62N 400P DE475-102N20A 102N20

    nec 2401

    Abstract: 102N20 400P DE475-102N20A PIN diode SPICE model
    Text: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE475-102N20A nec 2401 102N20 400P DE475-102N20A PIN diode SPICE model

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2