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    1024C Search Results

    1024C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8N3S272AC-1024CDI8 Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CD Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N4S271FC-1024CDI Renesas Electronics Corporation LVDS Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CDI Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
    8N3S272AC-1024CD8 Renesas Electronics Corporation LVPECL Frequency-Programmable Crystal Oscillator Visit Renesas Electronics Corporation
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    1024C Price and Stock

    Keystone Electronics Corp 1024C

    RETAINER FOR BATTERY HOLDER
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    DigiKey 1024C Bulk 6,804 1
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    Mouser Electronics 1024C 3,720
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    Newark 1024C Bulk 1,000
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    • 10000 $0.414
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    RS 1024C Bulk 500
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    Future Electronics 1024C Bulk 1,000
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    TME 1024C 100
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    Interstate Connecting Components 1024C 34
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    Sager 1024C 1,000
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    • 10000 $0.3007
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    Essentra Components 0501024CNB

    CAP NUT 10-24 THREAD .400 HEIGHT
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    DigiKey 0501024CNB Bulk 732 1
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    RS 0501024CNB Bulk 4 Weeks 1,000
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    • 10000 $0.16
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    Samtec Inc MMSD-10-24C-L-12.00-S-K

    .100 SOCKET DISCREET CABLE ASSEM
    Free Sample
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    DigiKey MMSD-10-24C-L-12.00-S-K Bag 188 1
    • 1 $6.9
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    Mouser Electronics MMSD-10-24C-L-12.00-S-K 133
    • 1 $6.9
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    • 100 $4.86
    • 1000 $3.91
    • 10000 $3.28
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    Essentra Components 0501024CN

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    DigiKey 0501024CN Bulk 174 1
    • 1 $0.16
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    • 1000 $0.07393
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    Analog Devices Inc LT1024CN-PBF

    IC OPAMP GP 2 CIRCUIT 14DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LT1024CN-PBF Tube 152 1
    • 1 $18.33
    • 10 $13.25
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    Find more 1024C price and stock on Findchips.com

    1024C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1024C Keystone Electronics Accessories, Battery Products, RETAINER FOR BATTERY HOLDER Original PDF
    1024C Murata Power Solutions Transformers - Pulse Transformers - PULSE XFMR 1.2CT:1CT 8.8MH Original PDF
    1024-Channel-ADPCM Amphion Semiconductor 1024-Channel ADPCM Original PDF

    1024C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Secondary power supply series for automotive 2.69 to 5.5V, 1.2V Output, 2.25MHz Synchronous Step-Down Converter BD90571EFJ-C ●General Description The BD90571EFJ-C is a synchronous rectification type step-down DC/DC converter with a 2.25MHz fixed


    Original     		PDF 25MHz BD90571EFJ-C BD90571EFJ-C 25MHz

    FT800

    Abstract: FT800 Embedded Video Engine Datasheet DS_FT800 MPU 8751 s vqfn 7 x 7 TRAY 0.9mm
    Text: Document No.: FT_000792 FT800 Embedded Video Engine Datasheet Version 1.1 Clearance No.: FTDI# 334 Future Technology Devices International Ltd. FT800 Embedded Video Engine The FT800 is an easy to use graphic controller targeted for embedded applications to generate high-quality


    Original     		PDF FT800 FT800 FT800 Embedded Video Engine Datasheet DS_FT800 MPU 8751 s vqfn 7 x 7 TRAY 0.9mm

    MSC2323258D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a


    Original     		PDF MSC2323258D-xxBS4/DS4 152-word 32-bit MSC2323258D-xxBS4/DS4 72-pin MSC2323258D

    E5-1000-125-N-S-D-D

    Abstract: No abstract text available
    Text: HEDC-55xx/HEDC-56xx Two or Three Channel Quick Assembly Encoders With Connector Latch Data Sheet Description Features The HEDC-5xxx-xxx, while similar to the industry standard HEDS-5xxx kit encoder, provides a connector latch on the cover housing to improve connector retention. This


    Original     		PDF HEDC-55xx/HEDC-56xx HEDS-9000 AV02-3381EN E5-1000-125-N-S-D-D

    MSC23B236D

    Abstract: No abstract text available
    Text: This version: Mar. 3. 1999 Semiconductor MSC23B236D-xxBS8/DS8 2,097,152-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages mounted with


    Original     		PDF MSC23B236D-xxBS8/DS8 152-word 36-bit MSC23B236D-xxBS8/DS8 72-pin MSC23B236D

    G10768

    Abstract: 1000 hz cmos Image Sensors
    Text: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses


    Original     		PDF G10768 1024-channel, G10768-1024D) G10768-1024DB) SE-171 KMIR1015E06 1000 hz cmos Image Sensors

    G10768

    Abstract: G10768-1024DB
    Text: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses


    Original     		PDF G10768 1024-channel, G10768-1024D) G10768-1024DB) SE-171 KMIR1015E07 G10768-1024DB

    642006EGM1G09TD

    Abstract: DIMM 1998
    Text: 2M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 642006EGM1G09TD 168 Pin 2Mx64 EDO DIMM Unbuffered, 1k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 2Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 1Mx16 (TSOP) DRAM


    Original     		PDF 642006EGM1G09TD 2Mx64 DS390-1 DIMM 1998

    Untitled

    Abstract: No abstract text available
    Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1


    OCR Scan     		PDF TMS44100, TMS44100P 4194304-BIT SMHS410F-SEPTEMBER 1989-REVISED TMS44100/P-60 TMS44100/P-70 TMS44100/P-80 A0-A10 TMS44100

    Untitled

    Abstract: No abstract text available
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.


    OCR Scan     		PDF TMS418160A 16-BIT TMS418160As 1024-Cycle R-PDSO-J42) 18160A

    44-800-p

    Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
    Text: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8


    OCR Scan     		PDF TMS44800, TMS44800P 288-WORD SMHS480B-AUGUST1992-REVISED TMS44800/Ps SMHS480B-AUQUST1992-REVISED TMS44800J 44-800-p 44800P PIN DIAGRAM of IC AD 524 IN2045

    TMS44410

    Abstract: TMS44410-70
    Text: TMS44410 1 048 576-WORD BY 4-BIT WRITE-PER-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A - • Organization . . . 1 048 576 x 4 SMHS441 JANUARY 1991 DM and DJ Packaget Top View • Single 5-V Power Supply (±10% Tolerance) • Performance Ranges: ACCESS ACCESS ACCESS


    OCR Scan     		PDF TMS44410 576-WORD SMHS441 TMS44410-60 TMS44410-70 TMS44410-80 TMS44410-10

    TMS44101

    Abstract: No abstract text available
    Text: TMS44101 4194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMHS411 — JA N U A R Y 1991 Organization . . . 4 194 304 x DC w C RAS C 1 1 ^ 2 3 Z 4 NC A 10 C 5 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A0 C 9 A1 C 10 A2 C 11 READ ACCESS ACCESS ACCESS


    OCR Scan     		PDF TMS44101 304-BIT SMHS411 TMS44101s TMS44101-60 TMS44101-10

    TS-2321

    Abstract: No abstract text available
    Text: SMJ44400 1 048 576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS041D - JANUARY 1991 - REVISED JUNE 1995 Processed to MIL-STD-883, Class B Organization. . . 1 048 576 x 4 Single 5-V Power Supply ±10% Tolerance Performance Ranges: A CCESS ACCESS A CCESS


    OCR Scan     		PDF SMJ44400 576-WORD SGMS041D MIL-STD-883, SMJ44400-80 SMJ44400-10 SMJ44400-12 TS-2321

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ

    Untitled

    Abstract: No abstract text available
    Text: HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword x 16-bit x 4-bank/16-Mword x 8-bit x 4-bank /32-Mword x 4-bit x 4-bank PC/133, PC/100 SDRAM HITACHI ADE-203-1095 Z Preliminary Rev. 0.0 Sep. 1, 1999


    OCR Scan     		PDF HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 Hz/100 16-bit 4-bank/16-Mword /32-Mword PC/133, PC/100 ADE-203-1095

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TSZ2G48SJSZ2J48S TOSHIBA SOLID STATE AC RELAY TSZ2G48S, TSZ2J48S Unit in mm OPTICALLY ISOLATED, NORM ALLY OPEN SSR COMPUTER PERIPHERALS 6.5 M AX. 24 M A X. MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEMS TRAFFIC CONTROL SYSTEMS R.M.S On-State Current


    OCR Scan     		PDF TSZ2G48SJSZ2J48S TSZ2G48S, TSZ2J48S

    FZ77

    Abstract: HM5264165 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15
    Text: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1


    OCR Scan     		PDF HM5264165 HM5264805 HM5264405 576-word 16-bit 152-word 304-word ADE-203-497 FZ77 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15

    marking WMM

    Abstract: RA52 1cas5 22r29
    Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory


    OCR Scan     		PDF 225mW 1024-cycle D01-4 T-46-23-17 MT4C4256DJ MT4C4259EJ marking WMM RA52 1cas5 22r29

    S891C

    Abstract: SS828
    Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.


    OCR Scan     		PDF TMS418160A 16-BIT S891C 1996-R TMS418160As 1024-Cycle 18160A-50 18160A-60 4181B0A-70 SS828