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    1017 MOSFET Search Results

    1017 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1017 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ac control using ir2110 and mosfet

    Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2110 driver CIRCUIT FOR INVERTERS 5V power supply using bridge rectifier circuit of 5v from 220 ac without transformer IR2110 equivalent single phase fully controlled rectifier with rl a coupler MOSFET DRIVER application note bridge rectifier single phase 240V AC PVI1050N
    Text: Application Note AN-1017 The PVI - a New Versatile Circuit Element Table of Contents Page The Function Mechanical Specifications .2


    Original     		PDF AN-1017 ac control using ir2110 and mosfet IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2110 driver CIRCUIT FOR INVERTERS 5V power supply using bridge rectifier circuit of 5v from 220 ac without transformer IR2110 equivalent single phase fully controlled rectifier with rl a coupler MOSFET DRIVER application note bridge rectifier single phase 240V AC PVI1050N

    KCP1017

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION DATE：01/14/2005 cosmo SOLID STATE RELAY - MOSFET OUTPUT KCP1017 ELECTRONICS CORPORATION 62M00018 REV. 2 SHEET 1 OF 7 z OUTSIDE DIMENSION︰ 1017 XXX 4.40 Date Code 2.30 0.05 +0 -0.05 4.70 0.40 2.35Max. 0.50±0.3 6.8±0.4 2.54 Unit︰mm


    Original     		PDF DATE01/14/2005 KCP1017 62M00018 35Max. 50mAat KCP1017

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION DATE 05/02/2011 SOLID STATE RELAY - MOSFET OUTPUT NO.62M00018 REV. cosmo KCP1017 ELECTRONICS CORPORATION 3 SHEET 1 OF 7 OUTSIDE DIMENSION cosmo 1017 XXX 4.40 Date Code 6.8±0.4 0.40 2.35Max. 0.50±0.3 0.05 2.30 0.254 4.60 Unit mm Tolerance


    Original     		PDF 62M00018 KCP1017 35Max. 62M00018

    NTC BD-11

    Abstract: SI2333DS LT3480 LTC4099 NTLJS4114N
    Text: LTC4099 Provides Unprecedented Control of USB Power Management and Battery Charger Functions Using I2C Design Note 1017 George H. Barbehenn Introduction The LTC 4099 high efficiency USB power manager and Li-Ion/Polymer battery charger seamlessly manages


    Original     		PDF LTC4099 dn1017 LTC4099, dn1017f NTC BD-11 SI2333DS LT3480 NTLJS4114N

    k1507

    Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
    Text: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output


    Original     		PDF AP384XG AP384XG compatibl00 AP3843G FDB7030 20TQ045 2200p k1507 K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28

    mosfet motor dc 48v

    Abstract: 12v dc motor variable speed control circuit motor dc fan 48v mosfet for dc to ac inverter 24V DC motor speed control zxmhc3f381n8 24V DC motor for 24v pwm mosfet dc ac inverter H-bridge Mosfet SO8 Wide Package
    Text: New Product Announcement MOSFET H-bridges optimise design of DC motor control & inverter circuits Description A range of four H-bridge MOSFET packages from Diodes Incorporated is set to dramatically simplify DC motor control circuits, by reducing both component


    Original     		PDF BC847 AH373/375/1751 AH286/287/288 500mA ZXBM1004/1015/1016/1017/1018 mosfet motor dc 48v 12v dc motor variable speed control circuit motor dc fan 48v mosfet for dc to ac inverter 24V DC motor speed control zxmhc3f381n8 24V DC motor for 24v pwm mosfet dc ac inverter H-bridge Mosfet SO8 Wide Package

    EIGHT MOSFET ARRAY

    Abstract: ns-1a AP0332CG AP0332 high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY
    Text: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VOO RO ON IO(ON) IO(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel.


    Original     		PDF AP0332 SO-16 -320V -15mA 875nA AP0332CG AP0332 EIGHT MOSFET ARRAY ns-1a AP0332CG high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY

    Untitled

    Abstract: No abstract text available
    Text: NTR4503N Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint 3 x 3 mm Pb−Free Package is Available


    Original     		PDF NTR4503N OT-23 OT-23

    TD-SCDMA

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 TD-SCDMA A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3

    5962R1321001KXA

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL


    Original     		PDF TR2815D/K SVRTR2815D/K-E SVRTR2815DF/K SVRTR2815DF/K-E 5962R1321001KXA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3

    IRFH5301

    Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
    Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters


    Original     		PDF IRFH5301PbF IRFH530ard 119mH, IRFH5301 AN-1154 IRFH5301TR2PBF IRFH5301TRPBF

    Untitled

    Abstract: No abstract text available
    Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters


    Original     		PDF IRFH5301PbF 119mH,

    MRF6S9125N

    Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 MRF6S9125N CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 PCN12895

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters


    Original     		PDF IRFH5301PbF

    COSMO1017

    Abstract: 1017 mosfet KCP1017
    Text: cosmo High Voltage, Solid State Relay-MOSFET Output KCP1017 UL 1577/ UL 508 File No.E108430 , Fl EN60950 (File No.FI13698) Features KCP1017 1. Normally Open, Single Pole Single Throw 2. Control 60V AC or DC Voltage o 3. Switch 130mA Loads cosmo 1017 O xxx-


    OCR Scan     		PDF KCP1017 E108430) EN60950 FI13698) 130mA 00V/ms 1500VACrms 130mA 450mW COSMO1017 1017 mosfet KCP1017

    bf999

    Abstract: For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU
    Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 • For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 BF 999 LB Q62702-F1132 G D Package1) S SOT-23 Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F1132 OT-23 bf999 For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU

    Untitled

    Abstract: No abstract text available
    Text: SSF25N40A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 400V


    OCR Scan     		PDF SSF25N40A

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =


    OCR Scan     		PDF -100V -250V 18-Lead SOW-20* -160V -15mA AP0416NA AP0416WG AP0416ND -200V

    1016ap

    Abstract: No abstract text available
    Text: 8 P-Channel Latchable Power MOSFET Array Ordering Information Voo ^O O N ^O(ON) 1O(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG * Average cu rre n t p e r chan n e l, m easured w ith all e ig h t ch annels co nn e cte d in p arallel.


    OCR Scan     		PDF SO-16 AP0332CG -320V -15mA 875nA AP0332 1016ap

    ap0420

    Abstract: AP0432
    Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V


    OCR Scan     		PDF -160V -200V -300V -320V -400V -100V -250V 18-Lead AP0416NA AP0420NA ap0420 AP0432

    IRFP448

    Abstract: irfp448 POWER MOSFET
    Text: International S Rectifier PD-9.595A IRFP448 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^d s s ~ 500V ^DS on = 0 . 6 0 0


    OCR Scan     		PDF IRFP448 O-247 O-220 O-218 IRFP448 irfp448 POWER MOSFET

    S11016X

    Abstract: 2sc 1014
    Text: _S11016X Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY Vd N-Channel s r DS(on) (ß ) Id (m A ) M O SFETs 0 .7 0 V G S= 4.5 V 600 1.8-V Rated 0.85 @ V g s = 2.5 V


    OCR Scan     		PDF S11016X S-03104-- 08-Feb-01 1016X S11016X 2sc 1014