ac control using ir2110 and mosfet
Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2110 driver CIRCUIT FOR INVERTERS 5V power supply using bridge rectifier circuit of 5v from 220 ac without transformer IR2110 equivalent single phase fully controlled rectifier with rl a coupler MOSFET DRIVER application note bridge rectifier single phase 240V AC PVI1050N
Text: Application Note AN-1017 The PVI - a New Versatile Circuit Element Table of Contents Page The Function Mechanical Specifications .2
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AN-1017
ac control using ir2110 and mosfet
IR2110 APPLICATION CIRCUIT FOR INVERTERS
IR2110 driver CIRCUIT FOR INVERTERS
5V power supply using bridge rectifier
circuit of 5v from 220 ac without transformer
IR2110 equivalent
single phase fully controlled rectifier with rl a
coupler MOSFET DRIVER application note
bridge rectifier single phase 240V AC
PVI1050N
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KCP1017
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE：01/14/2005 cosmo SOLID STATE RELAY - MOSFET OUTPUT KCP1017 ELECTRONICS CORPORATION 62M00018 REV. 2 SHEET 1 OF 7 z OUTSIDE DIMENSION︰ 1017 XXX 4.40 Date Code 2.30 0.05 +0 -0.05 4.70 0.40 2.35Max. 0.50±0.3 6.8±0.4 2.54 Unit︰mm
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DATE01/14/2005
KCP1017
62M00018
35Max.
50mAat
KCP1017
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE 05/02/2011 SOLID STATE RELAY - MOSFET OUTPUT NO.62M00018 REV. cosmo KCP1017 ELECTRONICS CORPORATION 3 SHEET 1 OF 7 OUTSIDE DIMENSION cosmo 1017 XXX 4.40 Date Code 6.8±0.4 0.40 2.35Max. 0.50±0.3 0.05 2.30 0.254 4.60 Unit mm Tolerance
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62M00018
KCP1017
35Max.
62M00018
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NTC BD-11
Abstract: SI2333DS LT3480 LTC4099 NTLJS4114N
Text: LTC4099 Provides Unprecedented Control of USB Power Management and Battery Charger Functions Using I2C Design Note 1017 George H. Barbehenn Introduction The LTC 4099 high efficiency USB power manager and Li-Ion/Polymer battery charger seamlessly manages
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LTC4099
dn1017
LTC4099,
dn1017f
NTC BD-11
SI2333DS
LT3480
NTLJS4114N
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k1507
Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
Text: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output
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AP384XG
AP384XG
compatibl00
AP3843G
FDB7030
20TQ045
2200p
k1507
K1507 MOSFET
transistor k1507
transistor cs 9013
Transistor 9013
AP3843GM
k-1507
k1507 TRANSISTOR
AZ3843
transformer ei28
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mosfet motor dc 48v
Abstract: 12v dc motor variable speed control circuit motor dc fan 48v mosfet for dc to ac inverter 24V DC motor speed control zxmhc3f381n8 24V DC motor for 24v pwm mosfet dc ac inverter H-bridge Mosfet SO8 Wide Package
Text: New Product Announcement MOSFET H-bridges optimise design of DC motor control & inverter circuits Description A range of four H-bridge MOSFET packages from Diodes Incorporated is set to dramatically simplify DC motor control circuits, by reducing both component
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BC847
AH373/375/1751
AH286/287/288
500mA
ZXBM1004/1015/1016/1017/1018
mosfet motor dc 48v
12v dc motor variable speed control circuit
motor dc fan 48v
mosfet for dc to ac inverter
24V DC motor speed control
zxmhc3f381n8
24V DC motor for 24v
pwm mosfet dc ac inverter
H-bridge Mosfet
SO8 Wide Package
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EIGHT MOSFET ARRAY
Abstract: ns-1a AP0332CG AP0332 high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY
Text: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VOO RO ON IO(ON) IO(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel.
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AP0332
SO-16
-320V
-15mA
875nA
AP0332CG
AP0332
EIGHT MOSFET ARRAY
ns-1a
AP0332CG
high voltage piezoelectric transducer
EIGHT p-channel MOSFET ARRAY
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Untitled
Abstract: No abstract text available
Text: NTR4503N Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint 3 x 3 mm Pb−Free Package is Available
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NTR4503N
OT-23
OT-23
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TD-SCDMA
Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
MRF7S19080HR3
TD-SCDMA
A114
A115
AN1955
C101
JESD22
MRF7S19080HSR3
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5962R1321001KXA
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL
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TR2815D/K
SVRTR2815D/K-E
SVRTR2815DF/K
SVRTR2815DF/K-E
5962R1321001KXA
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
MRF7S19080HR3
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IRFH5301
Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters
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IRFH5301PbF
IRFH530ard
119mH,
IRFH5301
AN-1154
IRFH5301TR2PBF
IRFH5301TRPBF
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Untitled
Abstract: No abstract text available
Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters
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IRFH5301PbF
119mH,
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MRF6S9125N
Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with
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MRF6S9125N
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125NR1
MRF6S9125N
CRCW121015R0FKEA
atc100b6r2
A114
A115
C101
JESD22
MRF6S9125NBR1
PCN12895
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL
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Untitled
Abstract: No abstract text available
Text: IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters
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IRFH5301PbF
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COSMO1017
Abstract: 1017 mosfet KCP1017
Text: cosmo High Voltage, Solid State Relay-MOSFET Output KCP1017 UL 1577/ UL 508 File No.E108430 , Fl EN60950 (File No.FI13698) Features KCP1017 1. Normally Open, Single Pole Single Throw 2. Control 60V AC or DC Voltage o 3. Switch 130mA Loads cosmo 1017 O xxx-
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KCP1017
E108430)
EN60950
FI13698)
130mA
00V/ms
1500VACrms
130mA
450mW
COSMO1017
1017 mosfet
KCP1017
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bf999
Abstract: For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU
Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 • For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 BF 999 LB Q62702-F1132 G D Package1) S SOT-23 Maximum Ratings Parameter
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Q62702-F1132
OT-23
bf999
For high-frequency stages up to 300 MHz
triode sot23
sot-23 MARKING GU
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Untitled
Abstract: No abstract text available
Text: SSF25N40A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 400V
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SSF25N40A
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Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =
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-100V
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0416NA
AP0416WG
AP0416ND
-200V
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PDF
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1016ap
Abstract: No abstract text available
Text: 8 P-Channel Latchable Power MOSFET Array Ordering Information Voo ^O O N ^O(ON) 1O(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG * Average cu rre n t p e r chan n e l, m easured w ith all e ig h t ch annels co nn e cte d in p arallel.
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SO-16
AP0332CG
-320V
-15mA
875nA
AP0332
1016ap
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PDF
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ap0420
Abstract: AP0432
Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V
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-160V
-200V
-300V
-320V
-400V
-100V
-250V
18-Lead
AP0416NA
AP0420NA
ap0420
AP0432
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IRFP448
Abstract: irfp448 POWER MOSFET
Text: International S Rectifier PD-9.595A IRFP448 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^d s s ~ 500V ^DS on = 0 . 6 0 0
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IRFP448
O-247
O-220
O-218
IRFP448
irfp448 POWER MOSFET
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S11016X
Abstract: 2sc 1014
Text: _S11016X Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY Vd N-Channel s r DS(on) (ß ) Id (m A ) M O SFETs 0 .7 0 V G S= 4.5 V 600 1.8-V Rated 0.85 @ V g s = 2.5 V
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S11016X
S-03104--
08-Feb-01
1016X
S11016X
2sc 1014
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