MMBT3906R
Abstract: DDTC115TUA DDTC144VCA DDTA124XCA DDTC124XUA DDTC143TCA BC856BW
Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: 8/26/02 10/1/02 Alert Category: Discrete Semiconductor DCS/PCN-1017 Alert Type: PCN #: Assembly Process PCN #:2002-1017 TITLE Bond Wire Size Change IMPACT None, No Form, Fit or Function Change
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DCS/PCN-1017
com/datasheets/ds30097
MMDT2222A
BAS70W-06
BSS138
DDTC115TUA
MMBT2222A
MMDT2227
BAS70WS
BSS138DW
MMBT3906R
DDTC115TUA
DDTC144VCA
DDTA124XCA
DDTC124XUA
DDTC143TCA
BC856BW
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ac control using ir2110 and mosfet
Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2110 driver CIRCUIT FOR INVERTERS 5V power supply using bridge rectifier circuit of 5v from 220 ac without transformer IR2110 equivalent single phase fully controlled rectifier with rl a coupler MOSFET DRIVER application note bridge rectifier single phase 240V AC PVI1050N
Text: Application Note AN-1017 The PVI - a New Versatile Circuit Element Table of Contents Page The Function Mechanical Specifications .2
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AN-1017
ac control using ir2110 and mosfet
IR2110 APPLICATION CIRCUIT FOR INVERTERS
IR2110 driver CIRCUIT FOR INVERTERS
5V power supply using bridge rectifier
circuit of 5v from 220 ac without transformer
IR2110 equivalent
single phase fully controlled rectifier with rl a
coupler MOSFET DRIVER application note
bridge rectifier single phase 240V AC
PVI1050N
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Photo diode circuit diagram
Abstract: cd photo diode optical pick up IR-Laser-Diode block diagram of diode operation free download IR circuit diagram IR PHOTO DIODE amplifier 1017 diode mp3 player circuit diagram photo amplifier application circuit
Text: Photo diode IC KOD-1017 Features DIMENSIONS Unit : Low Voltage Operation (2.5V ~ 5.5V) Frequency Characteristics : 8 MHz (Typ) Built-in Trans-Impedence Amplifier (current-to-voltage conversion circuit) High PD Sensitivity Recommended Diode for CD Applications is
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KOD-1017
780nm)
780nm
780nm,
Photo diode circuit diagram
cd photo diode
optical pick up
IR-Laser-Diode
block diagram of diode operation
free download IR circuit diagram
IR PHOTO DIODE amplifier
1017 diode
mp3 player circuit diagram
photo amplifier application circuit
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Untitled
Abstract: No abstract text available
Text: ACTM-1017 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1017
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Untitled
Abstract: No abstract text available
Text: ACTM-1017 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1017
14dBm
17dBm
-20dBm
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Untitled
Abstract: No abstract text available
Text: ACTM-1017 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 0.1 – 6 700 0.35 -50 2.2:1 75 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1017
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-PRF-38534)
MIL-STD-883,
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ACTM-1017
Abstract: M103 M105 M107
Text: ACTM-1017 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 0.1 – 6 700 0.35 -50 2.2:1 75 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1017
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
MIL-PRF-38534)
MIL-STD-883,
ACTM-1017
M103
M105
M107
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application note an-780a
Abstract: Note AN-780A
Text: NEW PRODUCT Miniature Package Pick-up IC for Portable CD Player Description The KOD-1017 is a low voltage integrated photodiode and TIA trans-impedence amplifier for use as the photodetector in CD optical pickups. The built-in TIA has low output impedance for
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KOD-1017
KOD-1051
780nm)
application note an-780a
Note AN-780A
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k1507
Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
Text: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output
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AP384XG
AP384XG
compatibl00
AP3843G
FDB7030
20TQ045
2200p
k1507
K1507 MOSFET
transistor k1507
transistor cs 9013
Transistor 9013
AP3843GM
k-1507
k1507 TRANSISTOR
AZ3843
transformer ei28
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Untitled
Abstract: No abstract text available
Text: Not recommended for New Designs Replaced by VTM48EF120T025A00 V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3
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VTM48EF120T025A00
V048F120T025
V048F120M025
V048F120T025
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SMD MARKING CODE sg
Abstract: V048F120T025 D496 D505 V048F120M025 VTM48EF120T025A00 smd fuse marking code H2
Text: Not recommended for New Designs Replaced by VTM48EF120T025A00 V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3
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VTM48EF120T025A00
V048F120T025
V048F120M025
V048F120T025
SMD MARKING CODE sg
D496
D505
V048F120M025
VTM48EF120T025A00
smd fuse marking code H2
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Untitled
Abstract: No abstract text available
Text: Not recommended for New Designs Replaced by VTM48EF120T025A00 V048F120T025 V048F120M025 VTM VTM Current Multiplier • 48 V to 12 V V•I Chip™ Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3
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VTM48EF120T025A00
V048F120T025
V048F120M025
V048F120T025
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SMD MARKING CODE sg
Abstract: VTM 48 D496 D505 V048F480M006 V048F480T006
Text: V048F480T006 V048F480M006 VTM VTMTM Transformer • 48 V to 48 V V•I ChipTM Converter • 125°C operation TJ • 6.3 A (9.4 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F480T006
V048F480M006
V048F480T006
SMD MARKING CODE sg
VTM 48
D496
D505
V048F480M006
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VTM 48
Abstract: D496 D505 V048F480M006 V048F480T006 J1 DIODE
Text: V048F480T006 V048F480M006 VTM VTMTM Transformer • 48 V to 48 V V•I ChipTM Converter • 125°C operation TJ • 6.3 A (9.4 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F480T006
V048F480M006
V048F480T006
VTM 48
D496
D505
V048F480M006
J1 DIODE
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mS25a
Abstract: ic sc 6200 D496 D505 V048F120M025 V048F120T025 chip transformer
Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F120T025
V048F120M025
V048F120T025
mS25a
ic sc 6200
D496
D505
V048F120M025
chip transformer
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TRANSFORMER 6200
Abstract: D496 D505 V048F240T012
Text: V048F240T012 V048F240M012 VTM VTMTM Transformer • 48 V to 24 V V•I ChipTM Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F240T012
V048F240M012
V048F240T012
TRANSFORMER 6200
D496
D505
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Untitled
Abstract: No abstract text available
Text: V048F240T012 V048F240M012 VTM VTM Current Multiplier • 48 V to 24 V V•I Chip™ Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F240T012
V048F240M012
V048F240T012
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V048F320T009
Abstract: D496 D505 V048F320M009
Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F320T009
V048F320M009
V048F320T009
D496
D505
V048F320M009
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V048F240T012
Abstract: D496 D505 V048
Text: V048F240T012 V048F240M012 VTM VTMTM Transformer • 48 V to 24 V V•I ChipTM Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F240T012
V048F240M012
V048F240T012
D496
D505
V048
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smd diode marking sG
Abstract: smd marking m4 smd fuse marking 20 VTM 48 D496 D505 V048F320M009 V048F320T009
Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F320T009
V048F320M009
V048F320T009
smd diode marking sG
smd marking m4
smd fuse marking 20
VTM 48
D496
D505
V048F320M009
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Untitled
Abstract: No abstract text available
Text: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F120T025
V048F120M025
V048F120T025
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Untitled
Abstract: No abstract text available
Text: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2
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V048F320T009
V048F320M009
V048F320T009
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SDL-6300
Abstract: SDL-6312-H1 TO3 HEATSINK thermistor STT-300H
Text: £ 1017 nm, 100 mW CW InGaAs LASER DIODES Key Features 1017 nm Output Single Transverse Mode 100 mW cw Power Diffraction Limited Beam Praseodymium Fiber Amplifier Pumps TEC Package Available Ideal for optical pumping Praseodymium doped fiber amplifiers, the SDL-6300 Series
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OCR Scan
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SDL-6300
00D374
SDL-6312-H1
TO3 HEATSINK
thermistor STT-300H
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DIODE RECTIFIER BRIDGE SINGLE
Abstract: BRIDGE RECTIFIERS GD-1017 GD-1018 BRIDGE-RECTIFIER GD-1019 GD-1020 GD-1021 GD-1022 GD-1023
Text: COLLINS ELECTRONICS CORP 34E D 5233170 QQ0QQ03 0 T-2Z-&7 Diode & Rectifier GD-1017 GD-1018 SINGLE-PHASE SILICON BRIDGE 1.0 AMPERES MAX. PEAK REVERSE VOLT: 50, 100, 200, 400, 600, 800, 1000 BRIDGE RECTIFIERS 4.0 AMPERES MAX. PEAK REVERSE VOLT'. 50, 100, 200, 400, 600, 800, 1000
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QQ0QQ03
GD-1017
GD-1018
GD-1019
GD-1020
GD-1021
GD-1022
GD-1023
DIODE RECTIFIER BRIDGE SINGLE
BRIDGE RECTIFIERS
GD-1017
GD-1018
BRIDGE-RECTIFIER
GD-1019
GD-1020
GD-1021
GD-1022
GD-1023
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