LT/SG3527A
Abstract: No abstract text available
Text: Operational Amplifiers LT-1012 LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,
|
OCR Scan
|
LT-1012
RC4097
LT-1012
LT/SG3527A
|
PDF
|
1012C
Abstract: LT/SG3527A
Text: LT-1012 Operational Amplifiers LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,
|
OCR Scan
|
LT-1012
LT-1012
114dB
RC4097
1012C
LT/SG3527A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive
|
Original
|
1000MHz
5963-2452E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for
|
Original
|
|
PDF
|
zvs using op amps
Abstract: OP-07 OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics PM1008
Text: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only
|
OCR Scan
|
PM-1012
600pA
35/iV
100pAMax
250pA
114dB
PM1012AJ*
PM1012AZ*
PM1012GJ
PM1012G2
zvs using op amps
OP-07
OP-12
PM1012AJ
PM1012AZ
PM1012GP
PM1012GS
Precision Monolithics
PM1008
|
PDF
|
transistor 1012 ge
Abstract: 741 voltage follower NT 101-2s pm1012aj
Text: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only
|
OCR Scan
|
600pA
35fiV
100pAMax
250pA
114dB
PM-1012
OP-07,
PM-1012
REF-01,
MAT-04
transistor 1012 ge
741 voltage follower
NT 101-2s
pm1012aj
|
PDF
|
UTC1012
Abstract: ML 1557 b transistor om 8370 hm 8370 avantek utc
Text: W h a ì HEW LETT mL’HM PA CK ARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
|
OCR Scan
|
|
PDF
|
SCR TYN Series
Abstract: BTA 612 triacs BTA scr 12v 10amps tyn 064 SCR BTA scr bta 151 scr tyn 612 SCR BTA 16 SCR TYN 412
Text: iXi\' b 57 i'X N /T Y N 0 5 1 2 — > TXN/TYN 1012 SGS-THOMSON •u SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY ■ TXN Serie : INSULATED VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 —> TYN/TXN 1012 Family
|
OCR Scan
|
E81734)
400Hz
T0220AB
SCR TYN Series
BTA 612
triacs BTA
scr 12v 10amps
tyn 064
SCR BTA
scr bta 151
scr tyn 612
SCR BTA 16
SCR TYN 412
|
PDF
|
fe 5571
Abstract: pe 5571 ic pe 5571 fa 5571 transistors type BC 5570 on 1012a ic aop 741 TMDB
Text: pm ! PM-1012 LOW-POWER, PRECISION OPERATIONAL AMPLIFIER Precision M onolith FEATURES • • Low Supply Current . 600pA Max Very Low Offset . 35/iV Max Low D rift. 1.5fiV/°C Max
|
OCR Scan
|
PM-1012
OP-07,
PM-1012
132dB
AT-04
fe 5571
pe 5571
ic pe 5571
fa 5571
transistors type BC 5570
on 1012a ic
aop 741
TMDB
|
PDF
|
transistor 1012
Abstract: 1012 transistor OP-07 Precision Monolithics Precision Monolithics OP07 Precision Monolithics MAT-04 OP-05 OP-07 OP-12 PM1012GP
Text: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • Low Supply C u rre n t. 600pA Max • Very Low O ffs e t. 35 fiV Max • Low Drift.
|
OCR Scan
|
PM-1012
600pA
35fiV
100pAMax
250pA
114dB
OP-07,
PM-1012
REF-01,
MAT-04
transistor 1012
1012 transistor
OP-07 Precision Monolithics
Precision Monolithics OP07
Precision Monolithics
OP-05
OP-07
OP-12
PM1012GP
|
PDF
|
KSR1012
Abstract: KSR2012
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
|
OCR Scan
|
KSR2012
KSR1012
-100nA,
-10mA,
KSR1012
KSR2012
|
PDF
|
A1012
Abstract: No abstract text available
Text: LNA A 1012 Applications: Base Transceiver Stations, Tower Mounted Amplifier, Repeater Major Characteristics • Matched amplifier with low noise and high gain ■ Off-the-shelf component, tape & reel packaged ■ SMT compatible outline shape Leadless Chip Carrier
|
Original
|
|
PDF
|
PHILIPS SENSOR 2032
Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V
|
Original
|
1616H
101CCD
WAG-05
PHILIPS SENSOR 2032
.47k capacitor image
ccd image sensor
Contact image sensor
BAS28
BAT74
BC860C
BFR92
BG40
CCD output buffer
|
PDF
|
|
|
transistor 1012 F
Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
|
Original
|
O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012 F
transistor 1012
CSA1012
1012 transistor
1012 npn
|
PDF
|
ksr1012
Abstract: No abstract text available
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
|
OCR Scan
|
KSR2012
ksr1012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • Low Supply C u rren t. 600/iA Max Very Low O ffs e t. 35¡¡V Max Low Max
|
OCR Scan
|
PM-1012
600/iA
100pAMax
250pA
114dB
REF-01,
MAT-04â
MAT-04
|
PDF
|
voltis
Abstract: FRL6796D FRL6796H FRL6796M FRL6796R
Text: Radiation-Hardened M OSFETs_ FRL6796M, FRL6796D, FRL6796R, FRL6796H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 8 A, 100 V rDS(on) = 0.18 fi TERMINAL DIAGRAM Features:
|
OCR Scan
|
FRL6796M,
FRL6796D,
FRL6796R,
FRL6796H
FRL6796M
FRL6796D
FRL6796R
FRL6796H
1000K
voltis
|
PDF
|
CA5470
Abstract: CA5470E CA5470M CA5470M96
Text: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation
|
Original
|
CA5470
14MHz,
CA5470
CA5470E
CA5470M
CA5470M96
|
PDF
|
staircase generator
Abstract: Wien Bridge Oscillator opamp single-supply wein bridge oscillator Dual Ganged Potentiometer ca3140 application circuit ca3140 equivalents CA3600E darlington cascode second stage CA3085 CA5130
Text: CA5160 NOT RECOMMENDED FOR NEW DESIGNS 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output September 1998 Features Description • MOSFET Input Stage - Very High ZI; 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II; 5pA (Typ) at 15V Operation
|
Original
|
CA5160
CA5160
CA5130
staircase generator
Wien Bridge Oscillator opamp
single-supply wein bridge oscillator
Dual Ganged Potentiometer
ca3140 application circuit
ca3140 equivalents
CA3600E
darlington cascode second stage
CA3085
|
PDF
|
FRF6764D
Abstract: FRF6764H FRF6764M FRF6764R IFRF6764R A345 TO-254AA Package
Text: Radiation-Hardened MOSFETs_ FRF6764M, FRF6764D, FRF6764R, FRF6764H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 3 0 A , l*DS(on) 1 0 0 = TERMINAL DIAGRAM V 0 .0 5 5 Q
|
OCR Scan
|
FRF6764M,
FRF6764D,
FRF6764R,
FRF6764H
FRF6764M
FRF6764D
FRF6764R
FRF6764H
1000K
IFRF6764R
A345
TO-254AA Package
|
PDF
|
pa 3029 b
Abstract: CA5160 CA5260 CA5260A CA5260AE CA5260AM CA5260AM96 CA5260E CA5260M CA5260M96
Text: CA5260, CA5260A 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage provides - Very High ZI = 1.5TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation = 2pA (Typ) at 5V Operation
|
Original
|
CA5260,
CA5260A
CA5260A
CA5260
CA5160
pa 3029 b
CA5260AE
CA5260AM
CA5260AM96
CA5260E
CA5260M
CA5260M96
|
PDF
|
OP-07
Abstract: OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics, Inc pm1008
Text: A N A LO G D E V IC E S Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • • • • Low Supply C u r re n t. 600/iA Max Very Low O ffs e t. 35juV Max
|
OCR Scan
|
PM-1012
600/iA
100pAMax
250pA
114dB
to-99
PM1012AJ*
PM1012AZ'
PM1012GJ
PM1012GP
OP-07
OP-12
PM1012AJ
PM1012AZ
PM1012GS
Precision Monolithics, Inc pm1008
|
PDF
|
CA5470
Abstract: CA5470E CA5470M CA5470M96
Text: CA5470 S E M I C O N D U C T O R November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ)
|
Original
|
CA5470
14MHz,
CA5470
CA5470E
CA5470M
CA5470M96
|
PDF
|
