Untitled
Abstract: No abstract text available
Text: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in
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BZG05C-Series
AEC-101
2002/95/EC
2002/96/EC
BZG05C-series-TR
BZG05C-series-TR3
11-Mar-11
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DO-214AC vishay
Abstract: BZG05C68
Text: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in
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BZG05C-Series
AEC-101
2002/95/EC
2002/96/EC
BZG05C-series
BZG05C-series-TR
BZG05C-series-TR3
6000/box
DO-214AC
DO-214AC vishay
BZG05C68
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Untitled
Abstract: No abstract text available
Text: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in
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BZG05C-Series
AEC-101
2002/95/EC
2002/96/EC
BZG05C-series-TR
BZG05C-series-TR3
2002/95/EC.
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SMD codes databook
Abstract: No abstract text available
Text: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • High reliability Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable AEC-101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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BZG05C-Series
AEC-101
2002/95/EC
2002/96/EC
DO-214AC
18-Jul-08
SMD codes databook
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Untitled
Abstract: No abstract text available
Text: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • High reliability Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable AEC-101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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BZG05C-Series
AEC-101
2002/95/EC
2002/96/EC
DO-214AC
11-Mar-11
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smd transistor marking z8
Abstract: 771-2N7002BKM315
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
771-2N7002BKM315
2N7002BKM
smd transistor marking z8
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smd transistor marking z8
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
smd transistor marking z8
MOSFET TRANSISTOR SMD MARKING CODE A1
2N7002BKM
SC-101
transistor smd code marking nc
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MOSFET TRANSISTOR SMD MARKING CODE ZA
Abstract: smd code marking HD smd diode marking a1 BSS84AKM
Text: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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BSS84AKM
OT883
SC-101)
AEC-Q101
771-BSS84AKM315
BSS84AKM
MOSFET TRANSISTOR SMD MARKING CODE ZA
smd code marking HD
smd diode marking a1
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Untitled
Abstract: No abstract text available
Text: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKM
OT883
SC-101)
AEC-Q101
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MOSFET TRANSISTOR SMD MARKING CODE ZA
Abstract: SC-101
Text: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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BSS84AKM
OT883
SC-101)
AEC-Q101
MOSFET TRANSISTOR SMD MARKING CODE ZA
SC-101
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Untitled
Abstract: No abstract text available
Text: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
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BSS84AKM
OT883
SC-101)
AEC-Q101
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Q67040-S4012-A2
Abstract: SPP20N05L sl diode
Text: BUZ 101 SL SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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SPP20N05L
O-220
Q67040-S4012-A2
29/Jan/1998
Q67040-S4012-A2
SPP20N05L
sl diode
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S1350
Abstract: C67078-S1350-A2
Text: BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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O-220
C67078-S1350-A2
S1350
C67078-S1350-A2
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diode sy 171
Abstract: smd diode marking sG sy 171 smd diode marking LM WU-M-266 smd marking SG
Text: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode
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WU-M-266
diode sy 171
smd diode marking sG
sy 171
smd diode marking LM
WU-M-266
smd marking SG
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diode sy 171
Abstract: smd marking sy sy 171 smd diode marking sG WU-M-266
Text: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode
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WU-M-266
diode sy 171
smd marking sy
sy 171
smd diode marking sG
WU-M-266
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diode sy 171
Abstract: 260 9918 smd diode marking sG WU-M-266
Text: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode
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WU-M-266
diode sy 171
260 9918
smd diode marking sG
WU-M-266
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SMD TRANSISTOR MARKING 5c
Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A
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BC856W=
BC857W=
BC858W=
BC856AW-G
BC858CW-G
OT-323
OT-323,
MIL-STD-750,
QW-BTR36
SMD TRANSISTOR MARKING 5c
smd transistor 5c
TRANSISTOR SMD MARKING CODE 5c
TRANSISTOR SMD MARKING CODE 3f
transistor smd code marking 101
transistor smd code marking 102
TRANSISTOR SMD MARKING CODE 3G
5c smd transistor
TRANSISTOR SMD MARKING CODE 3L
SMD TRANSISTOR MARKING 3B
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NTC 5R1
Abstract: IRF32N50 smd diode 600v 1a
Text: AC Motor Drive Table of Contents AC INPUT, Diode Bridges. 3 AC INPUT, Power Factor
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IRFP32N50K
IRFPS40N60K
O-247
GB15XP120KT
HFA25PB60
NTC 5R1
IRF32N50
smd diode 600v 1a
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IRF32N50k
Abstract: smd diode UF IRF32N50
Text: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge. 3 AC INPUT SECTION, Power Factor
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IRFP32N50K
IRFPS40N60K
O-247
LPE-3325
IRF32N50k
smd diode UF
IRF32N50
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SMD diode f9
Abstract: D09G60C
Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDD09SG60C
20mA2)
PG-TO252-3
D09G60C
SMD diode f9
D09G60C
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Untitled
Abstract: No abstract text available
Text: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDD05SG60C
20mA2)
PG-TO252-3
D05G60C
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SMD diode f9
Abstract: smd diode marking UJ D09G60C IDD09SG60C JESD22
Text: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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IDD09SG60C
20mA2)
SMD diode f9
smd diode marking UJ
D09G60C
IDD09SG60C
JESD22
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vds BUZ101 50 V 29 A flbSfon Package Ordering Code
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OCR Scan
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PDF
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O-220
BUZ101
C67078-S1350-A2
A235bOS
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7C SMD TRANSISTOR
Abstract: No abstract text available
Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A
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OCR Scan
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PDF
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O-220
BUZ101
C67078-S1350-A2
7C SMD TRANSISTOR
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