Untitled
Abstract: No abstract text available
Text: Process Introduction 2um / 18V Bipolar Process Technology Process features Key Design Rules Up-down isolation 8um space from Base to Iso Deep N+ collector plug NPN transistor Lateral PNP transistor Implant resistor optional MOS capacitor
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20x200um2)
100uA)
100x100um2)
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Untitled
Abstract: No abstract text available
Text: Process Introduction 1.5um / 15V Bipolar Process Technology Process features Key Design Rules z z z z z z z z Up-down isolation 7um space from Base to Iso Deep N+ collector plug NPN transistor Lateral PNP transistor Vertical Substrate PNP transistor Implant resistor (optional)
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100uA)
100x100um2)
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Untitled
Abstract: No abstract text available
Text: Process Introduction 4um / 25V Bipolar Process Technology Process features z z z z z z z z z z z Key Design Rules Single isolation Deep N+ collector plug NPN transistor Lateral PNP transistor Vertical substrate PNP transistor Zener diode Implant Resistor (optional)
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18x18
100uA)
100x100um2)
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2P4M
Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Text: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features Voltage Logic,High Voltage Starting material 3.3V,18V/18V P-type (100), Non-Epi Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)
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8V/18V
100x100um2
2P4M
cmos transistor 0.35 um
transistor 2p4m
0.35Um 2P4M
of 2p4m
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Untitled
Abstract: No abstract text available
Text: Process Introduction 2um / 36V Bipolar Process Technology Process features Key Design Rules Up-down isolation Deep N+ collector plug N-channel stop NPN transistor Lateral PNP transistor Implant resistor optional MOS capacitor
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100uA)
100x100um2)
20x200um2)
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