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Catalog Datasheet	Type	Document Tags	PDF
2SC2879 Abstract: 2sc2879 transistor Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency	Original	2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 transistor	PDF
2SC2879A Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879 Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency	Original	2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879A 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879	PDF
100WPEP Abstract: 2SC2879 2sc2879 equivalent Text: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB	OCR Scan	2SC2879 -30MHz 28MHz 100WpEP 150pF 022AF 47/iF 044/uF 100WPEP 2SC2879 2sc2879 equivalent	PDF
2SC2879 Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency	Original	2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879 toshiba 2sc2879 2SC2879A 2sc2879 equivalent	PDF
toshiba 2sc2879 Abstract: 2sc2879 equivalent Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency	Original	2SC2879A 30MHz 28MHz 100WPEP -24dB 13Besented toshiba 2sc2879 2sc2879 equivalent	PDF
2SC2879 Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency	Original	2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector	PDF
arco 465 Abstract: arco 469 SD1487 100WPEP arco 463 Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon	Original	SD1487 SD1487 arco 465 arco 469 100WPEP arco 463	PDF
arco 469 Abstract: arco 465 100WPEP SD1487 arco 463 Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION	Original	SD1487 SD1487 arco 469 arco 465 100WPEP arco 463	PDF
toshiba 2sc2879 Abstract: 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Power Gain Po = lOOWpEP Gp = 13dB 7 c = 35%(Min.) Collector Efficiency	OCR Scan	2SC2879 30MHz 28MHz 100mA 961001EAA2' toshiba 2sc2879 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor	PDF
100WPEP Abstract: Ferrite core TDK D1S1555 Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p	OCR Scan	2SC2879 2-30MHZ 28MHz 100Wp --24dB 1S1555 961001E 100WPEP Ferrite core TDK D1S1555	PDF
SD1487 Abstract: No abstract text available Text: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO	OCR Scan	SD1487 SD1487 D070541	PDF
SD1487 Abstract: No abstract text available Text: Jzi±£.u i, L/ nc. 20 STERN. AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 30 MHz 12.5 VOLTS IMD-30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN	Original	SD1487 IMD-30 5004LFL SO1487 SD1487 100mA 30MHz 150mA	PDF
SD1487 Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465 Text: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon	Original	SD1487 SD1487 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465	PDF
Untitled Abstract: No abstract text available Text: fZ ^ 7 7 S G S -T H O M S O N SD1487 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz . 12.5 VO LTS ■ IMD -3 0 dB . C O M M O N EMITTER ■ G O LD M ETALLIZATION . P qut — 100 W MIN. WITH 12.0 dB GAIN PIN C O N N E C TIO N	OCR Scan	SD1487 SD1487	PDF

Untitled Abstract: No abstract text available Text: TO SHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f 9R7Q Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB Collector Efficiency	OCR Scan	2SC2879 30MHz 28MHz 2-13B1A 100mA, 1S1555 150pF 150pF 022//F	PDF