Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100V TRANSISTOR Search Results

    100V TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE74

    Abstract: 10-32 UNF NPN transistor collector base and emitter
    Text: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter

    NPN transistor collector base and emitter

    Abstract: NTE96 10-32 UNF 2A
    Text: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A

    K1X01

    Abstract: K1X04 K1X08 TMC262 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0
    Text: TMC262 EvalBoard 1v00 TP1 VS TP2 +3V3 LM2594HVM-3.3 GND PWR L1 1K D3 LED Gruen R1 C7 + C6 100nF 120µF/25V D2 IC1 SS16 C5 100nF/100V + C4 100µF/100V SMBJ60A D1 + C3 + C2 100µF/100V + 100µF/100V C1 100µF/100V 150 µH K1 GND Firma TMC Maßstab 101,34% Änderung


    Original     		PDF TMC262 LM2594HVM-3 100nF F/25V 100nF/100V F/100V SMBJ60A K1X01 K1X04 K1X08 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0

    Zetex ZXTP19100CZ

    Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 Zetex ZXTP19100CZ TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA

    B30NF10

    Abstract: p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4
    Text: STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB30NF10 100V <0.045Ω 35A STP30NF10 100V <0.045Ω 35A STP30NF10FP 100V <0.045Ω


    Original     		PDF STB30NF10 STP30NF10 STP30NF10FP D2PAK/TO-220/TO-220FP STP30NF10 O-220 O-220FP B30NF10 p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors

    ZX5T853Z

    Abstract: ZX5T853ZTA
    Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA

    SOT89 transistor marking 4A high frequency

    Abstract: ZX5T953ZTA ZX5T953Z
    Text: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T953Z -100V ZX5T953ZTA SOT89 transistor marking 4A high frequency ZX5T953ZTA ZX5T953Z

    NTE46

    Abstract: No abstract text available
    Text: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE46 500mA 100mA, 100MHz, 100kHz NTE46

    ZXTP2013Z

    Abstract: ZXTP2013ZTA
    Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA

    ZXTN2011G

    Abstract: ZXTN2011GTA ZXTN2011GTC
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC

    fzt 655

    Abstract: FZT marking code
    Text: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA


    Original     		PDF FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code

    ZXTN

    Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor

    ZXT953K

    Abstract: ZXT953KTC of ZXT953KTC
    Text: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXT953K -100V ZXT953KTC ZXT953K ZXT953KTC of ZXT953KTC

    ZX5T953GTA

    Abstract: ZX5T953G ZX5T953GTC x5t953
    Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953

    ZX5T853G

    Abstract: ZX5T853GTA ZX5T853GTC
    Text: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V TP2013ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2013G 100V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 TP2013GTA TP2013GTC un250

    CEB1710

    Abstract: CEP1710 CEF1710
    Text: CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP1710 Type 100V 85mΩ 19A 10V CEB1710 100V 85mΩ 19A 10V CEF1710 100V 85mΩ 19A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP1710/CEB1710 CEF1710 CEP1710 CEB1710 O-263 O-220 O-220F O-220/263 CEB1710 CEP1710 CEF1710