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    100V P-CHANNEL POWER MOSFET Search Results

    100V P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    100V P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		STS3C2F100 STS3C2F100 JESD97 PDF

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD9110 IRFD9110 TA17541 PDF

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		2N6896 -100V, -100V 2N6896 O-204AA TB334 TB334 PDF

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET PDF

    FSF9150R4

    Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,


    Original     		JANSR2N7403 FSF9150R4 -100V, R2N74 FSF9150R4 p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET PDF

    IRF9540

    Abstract: IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM
    Text: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Semiconductor -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -100V, -100V IRF9540 IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM PDF

    RFK25P10

    Abstract: No abstract text available
    Text: i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V and-80V RFH25P08 O-218AC RFK25P10 PDF

    STS3C2F100

    Abstract: No abstract text available
    Text: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■


    Original     		STS3C2F100 STS3C2F100 PDF

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10lopment. 2E12 FRX130D FRX130H FRX130R PDF

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10oducts 2E12 FRX130D FRX130H FRX130R PDF

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A, 100V, rDS ON = 0.070Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		JANSR2N7292 FRF150R4 1000K PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		JANSR2N7272 FRL130R4 1000K PDF

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET PDF

    IRF5NJ9540

    Abstract: No abstract text available
    Text: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		4038A IRF5NJ9540 -100V -100V, IRF5NJ9540 PDF

    IRF5Y9540CM

    Abstract: 4.5v to 100v input regulator
    Text: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		4027A O-257AA) IRF5Y9540CM -100V high-energy52-7105 IRF5Y9540CM 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs Title The RFP12P08, and RFP12P10 are P-Channel FP1 enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, 08,


    Original     		RFP12P08, RFP12P10 RFP12P10 TA17511. RFP12P08 O-220AB PDF

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet November 1998 File Number -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		2N6896 -100V, 2N6896 O-204AA -100V TB334 TB334 PDF

    RFK25

    Abstract: RFK25P10 DRA 402 DIODE
    Text: y*Rg*s RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V TA49230. RFH25P08 RFH25P10 RFK25P08 RFK25 RFK25P10 DRA 402 DIODE PDF

    TA17521

    Abstract: IRF9140
    Text: HAJims S IRF9140, IRF9141, IRF9142, IRF9143 Semiconductor y y -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRF9140, IRF9141, IRF9142, IRF9143 -100V, TA1752E RF9142, IRF9143 TA17521 IRF9140 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		IRF9530, RF1S9530SM -100V, PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, RF1S9540SM S e m iconductor Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		IRF9540, RF1S9540SM -100V, -100V PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    OCR Scan     		IRF9510 -100V, O-220AB -100V PDF

    Untitled

    Abstract: No abstract text available
    Text: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,


    OCR Scan     		RFP12P08, RFP12P10 RFP12P10 TA17511. AN7254 AN7260 PDF