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    100V P-CHANNEL POWER MOSFET Search Results

    100V P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		PDF STS3C2F100 STS3C2F100 JESD97

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110 IRFD9110 TA17541

    IRFF9130

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet January 2002 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V IRFF9130

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		PDF STS3C2F100 STS3C2F100 JESD97

    IRFF9120

    Abstract: No abstract text available
    Text: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF IRFF9120 TA17501. O-205AF IRFF9120

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		PDF 2N6896 -100V, -100V 2N6896 O-204AA TB334 TB334

    an7254

    Abstract: RFL1P10 RFL1P08
    Text: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260. RFL1P10 RFL1P08

    IRFF9130

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V IRFF9130

    IRFD9110

    Abstract: TA17541
    Text: IRFD9110 Data Sheet July 1999 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET File Number 2215.3 Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD9110 IRFD9110 TA17541

    IRFP9150

    Abstract: IRFP150 IRFP9151 application notes irfp150
    Text: IRFP9150 Data Sheet January 2002 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET Features • 25A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9150 IRFP9150 IRFP150. IRFP150 IRFP9151 application notes irfp150

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		PDF JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET

    FSF9150R4

    Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,


    Original     		PDF JANSR2N7403 FSF9150R4 -100V, R2N74 FSF9150R4 p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET

    IRFP9140

    Abstract: mosfet motor speed drive T0-247 TA17521
    Text: IRFP9140 Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET Features • 19A, 100V This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9140 TA17521. IRFP9140 mosfet motor speed drive T0-247 TA17521

    RFK25P10

    Abstract: No abstract text available
    Text: i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V and-80V RFH25P08 O-218AC RFK25P10

    STS3C2F100

    Abstract: No abstract text available
    Text: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■


    Original     		PDF STS3C2F100 STS3C2F100

    RFP2P10

    Abstract: RFP2P08 TB334
    Text: RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate • rDS ON = 3.500Ω File Number 2870.1 • -2A, -80V and -100V [ /Title power field effect transistors designed for applications such


    Original     		PDF RFP2P08, RFP2P10 -100V, -100V TB334 RFP2P10 RFP2P08 TB334

    IRFP9150

    Abstract: application notes irfp150
    Text: IRFP9150 Data Sheet August 1999 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET File Number 2293.4 Features • 25A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9150 IRFP9150 IRFP150. TA49230. application notes irfp150

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10lopment. 2E12 FRX130D FRX130H FRX130R

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10oducts 2E12 FRX130D FRX130H FRX130R

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
    Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .


    OCR Scan     		PDF IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode

    Untitled

    Abstract: No abstract text available
    Text: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF9130, IRF9131, IRF9132, IRF9133 -100V, -100V

    RFK25

    Abstract: RFK25P10 DRA 402 DIODE
    Text: y*Rg*s RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V TA49230. RFH25P08 RFH25P10 RFK25P08 RFK25 RFK25P10 DRA 402 DIODE

    Untitled

    Abstract: No abstract text available
    Text: RFM6P08, RFM6P10, RFP6P08, RFP6P10 -6A, -80V and -100V, 0.6 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -6A,-80V and-100V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for high speed appli­


    OCR Scan     		PDF RFM6P08, RFM6P10, RFP6P08, RFP6P10 -100V, and-100V TA09046. TB334 AN7254 AN7260.