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    100V 35A IGBT Search Results

    100V 35A IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100V 35A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGPC50MD2

    Abstract: No abstract text available
    Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC50MD2 10kHz) O-247AC. O-247AD) O-247AC IRGPC50MD2

    IGBT 500V 35A

    Abstract: IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2
    Text: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC50MD2 10kHz) O-247AC. O-247AD) O-247AC IGBT 500V 35A IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2

    transistor* igbt 70A 300 V

    Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		PDF IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A transistor* igbt 70A 300 V 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp diode 70A

    IGBT 500V 35A

    Abstract: diode C407 C408 diode CPU165MM IGBT tail time
    Text: Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM


    Original     		PDF CPU165MM 10kHz) 360Vdc, C-408 IGBT 500V 35A diode C407 C408 diode CPU165MM IGBT tail time

    Untitled

    Abstract: No abstract text available
    Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching


    Original     		PDF IRG4PSH71UDPbF 40kHz 200kHz Super-247 O-247 IRFPS37N50A IRFPS37N50A

    IGBT 500V 35A

    Abstract: diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses


    Original     		PDF CPU165MM 10kHz) 360Vdc, C-408 IGBT 500V 35A diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM

    IRG4PSH71UD

    Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSH71UD 40kHz 200kHz Super-247 O-247 IRG4PSH71UD IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274

    Untitled

    Abstract: No abstract text available
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSH71UD 40kHz 200kHz Super-247 O-247

    IRF3710ZPBF

    Abstract: IRF3710Z IRF3710ZL IRF3710ZS AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF
    Text: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF O-220AB. O-220AB IRF3710ZPBF IRF3710Z IRF3710ZL IRF3710ZS AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF

    transistor c331

    Abstract: c331 transistor IRGPC50M C329 transistor c332
    Text: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 c331 transistor IRGPC50M C329 transistor c332

    transistor c331

    Abstract: C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses

    transistor c331

    Abstract: c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses
    Text: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses

    IRF3710Z

    Abstract: IRF3710ZL IRF3710ZS AN-994
    Text: PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 4632A IRF3710Z IRF3710ZS IRF3710ZL EIA-418. O-220AB IRF3710Z IRF3710ZL IRF3710ZS AN-994

    94632A

    Abstract: IRF3710Z IRF3710ZL IRF3710ZS AN-994
    Text: PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 4632A IRF3710Z IRF3710ZS IRF3710ZL O-220AB 94632A IRF3710Z IRF3710ZL IRF3710ZS AN-994

    thyristor 900A

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 124 N 16 RR N Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values


    Original     		PDF

    IRF3710Z

    Abstract: IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF
    Text: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF EIA-418. O-220AB IRF3710Z IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF

    IRF3710Z

    Abstract: IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZLPBF IRF3710ZSPBF
    Text: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF O-220AB IRF3710Z IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZLPBF IRF3710ZSPBF

    IC C399

    Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		PDF IRGPC50MD2 10kHz) O-247AC C-406 IC C399 IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100

    c331 transistor

    Abstract: No abstract text available
    Text: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC50M 10kHz) C-333 S54SS G020123 O-247AC C-334 c331 transistor

    transistor c331

    Abstract: c331 transistor transistor c332 transistor c333 IGBT 500V 35A 1RGPC50M package transistor c331
    Text: P D - 9.1024 htemational Rectifier IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V g e = 15V • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF 10kHz) IRGPC50M circui-20 C-333 O-247AC C-334 transistor c331 c331 transistor transistor c332 transistor c333 IGBT 500V 35A 1RGPC50M package transistor c331

    Untitled

    Abstract: No abstract text available
    Text: htemational Preliminary Data Sheet PD - 5.030 [^Rectifier CPU165MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 10ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses


    OCR Scan     		PDF CPU165MM 10kHz) 360Vdc, 00A/ps yfactors01% 4A55452 02D1C

    IGBT 500V 35A

    Abstract: CPU165MM 100V 35A igbt
    Text: International 1*»]Rectifier Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 1 0ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF 10kHz) CPU165MM 360Vdc, 00A/ps IGBT 500V 35A CPU165MM 100V 35A igbt

    C405 transistor

    Abstract: mv C405 C404 Transistor mv c402 IGBT 500V 35A IRGPC50MD2
    Text: International lü ] Rectifier PD - 9.1145A IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 0 jjs @125°C, Vqe = 15V Switching-loss rating includes all "tail” losses


    OCR Scan     		PDF 10kHz) IRGPC50MD2 C-405 TQ-247AC C-406 C405 transistor mv C405 C404 Transistor mv c402 IGBT 500V 35A IRGPC50MD2

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses


    OCR Scan     		PDF IRGPC50MD2 -10ps 10kHz) C-405 O-247AC C-406