100V,100MA TRANSISTOR Search Results

100V,100MA TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

100V,100MA TRANSISTOR Price and Stock

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Diotec Semiconductor AG BC857C Bipolar Transistor - SOT-23 - 45V - 100mA - PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BC857C		120,000			1 - 10 - 100 - 1000 - 10000 $0.0147	Buy Now
Diotec Semiconductor AG BC847B Bipolar Transistor - SOT-23 - 45V - 100mA - NPN
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Onlinecomponents.com	BC847B		117,000			1 - 10 - 100 - 1000 - 10000 $0.0114	Buy Now
Diotec Semiconductor AG MMDT5213W Digital Transistor - SOT-323 - 50V - 100mA
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Onlinecomponents.com	MMDT5213W					1 - 10 - 100 - 1000 - 10000 $0.014	Buy Now
Diotec Semiconductor AG BC847BR13 Bipolar Transistor - SOT-23 - 45V - 100mA - NPN
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Onlinecomponents.com	BC847BR13					1 - 10 - 100 - 1000 - 10000 $0.0097	Buy Now
Diotec Semiconductor AG MMBTRC104SS-AQ Digital Transistor - SOT-23 - 50V - 100mA - Automotive
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	MMBTRC104SS-AQ					1 - 10 - 100 - 1000 - 10000 $0.0188	Buy Now

Find more 100V,100MA TRANSISTOR price and stock on Findchips.com

100V,100MA TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b063 Abstract: Concord Electronics DDG0133 Pirgo Electronics Text: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)	OCR Scan	13A0133 DDG0133 100mA 100mA, 500mA, 100mA 125mA b063 Concord Electronics Pirgo Electronics	PDF
Untitled Abstract: No abstract text available Text: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100\|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V	OCR Scan	13A0133 0043STB DD00133 PG6003 100mA 100mA, 500mA, 125mA	PDF
fzt 655 Abstract: FZT marking code Text: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA	Original	FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code	PDF
PIR60 Abstract: No abstract text available Text: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V	OCR Scan	IA3A0131 100mA 500mA, PIR60	PDF
API Electronics Abstract: iC-LA vce 1v Pirgo Electronics Text: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V	OCR Scan	100mA 500mA, API Electronics iC-LA vce 1v Pirgo Electronics	PDF
3A 100V npn LOW SATURATION VOLTAGE Abstract: TSD2098 TSD2098A Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics	Original	TSD2098A OT-89 100mA TSD2098ACY 3A 100V npn LOW SATURATION VOLTAGE TSD2098 TSD2098A	PDF
A08 transistor Abstract: No abstract text available Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics	Original	TSD965A 100mA TSD965ACT A08 transistor	PDF
t6753 Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725 Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725	PDF
FMMT493 Abstract: FMMT593 DSA003699 Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V	Original	FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA, FMMT493 FMMT593 DSA003699	PDF
Untitled Abstract: No abstract text available Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V	Original	FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA,	PDF
FZT951 Abstract: FZT953 fzt853 FZT851 DSA003718 Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps	Original	FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718	PDF
ztx953 Abstract: IN 3319 B DSA003779 Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*	Original	ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779	PDF
Untitled Abstract: No abstract text available Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage	Original	ZDT6753 OT223) T6753 -200mA* -100mA* -50mA, -500mA, -100mA, 100MHz	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

pnp transistor 1000v Abstract: FZT758 FZT658 DSA003716 Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6	Original	OT223 FZT758 FZT658 -200mA, -20mA, 20MHz -100mA, -100V -20mA pnp transistor 1000v FZT758 FZT658 DSA003716	PDF
IB 100MA NPN Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃	Original	HBDW94C O-220 -100V -100V, -20mA -100mA IB 100MA NPN HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A	PDF
ZXT753 Abstract: No abstract text available Text: ZTX653DCSM ZTX753DCSM COMPLEMENTARY NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1 4 0.64 ± 0.06 (0.025 ± 0.003) 3 2 2.54 ± 0.13 (0.10 ± 0.005)	Original	ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -100mA 100MHz -500mA -50mA	PDF
zxt753 Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)	Original	ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -500mA -50mA zxt753 ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC	PDF
Untitled Abstract: No abstract text available Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT593 ✪ COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 E C B * +25 ° C I /I =10 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C + * I+/I=50 I /I =10 +-=5V + V I /I =10	Original	FMMT593 FMMT493 100mA 100ms	PDF
FZT753 Abstract: FZT653 DSA003715 Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL	Original	OT223 FZT753 FZT653 FZT753 FZT653 DSA003715	PDF
FZT653 Abstract: FZT753 DSA003712 Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE FZT753 PARTMARKING DETAIL FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.	Original	OT223 FZT653 FZT753 FZT653 FZT753 DSA003712	PDF
Bv 42 transistor Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC	PDF
ZX5T953GTA Abstract: ZX5T953G ZX5T953GTC x5t953 Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953	PDF
ZXTP2013Z Abstract: ZXTP2013ZTA Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA	PDF

100V,100MA TRANSISTOR Search Results

100V,100MA TRANSISTOR Result Highlights (5)

100V,100MA TRANSISTOR Price and Stock

Diotec Semiconductor AG BC857C

Diotec Semiconductor AG BC847B

Diotec Semiconductor AG MMDT5213W

Diotec Semiconductor AG BC847BR13

Diotec Semiconductor AG MMBTRC104SS-AQ

100V,100MA TRANSISTOR Datasheets Context Search

b063

Untitled

fzt 655

PIR60

API Electronics

3A 100V npn LOW SATURATION VOLTAGE

A08 transistor

t6753

FMMT493

Untitled

FZT951

ztx953

Untitled

y51 h 120c

pnp transistor 1000v

IB 100MA NPN

ZXT753

zxt753

Untitled

FZT753

FZT653

Bv 42 transistor

ZX5T953GTA

ZXTP2013Z