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    100V,100MA TRANSISTOR Search Results

    100V,100MA TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    100V,100MA TRANSISTOR Price and Stock

    Diotec Semiconductor AG BC546B

    Bipolar Transistor - TO-92 - 65V - 100mA - NPN
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    Diotec Semiconductor AG BCR08PN

    Digital Transistor - SOT-363 - 50V - 100mA
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    Diotec Semiconductor AG MMBTRC118SS

    Digital Transistor - SOT-23 - 50V - 100mA
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    Onlinecomponents.com MMBTRC118SS
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    Diotec Semiconductor AG MMBTRC119SS

    Digital Transistor - SOT-23 - 50V - 100mA
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    Onlinecomponents.com MMBTRC119SS
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    Diotec Semiconductor AG BC546C

    Bipolar Transistor - TO-92 - 65V - 100mA - NPN
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    Onlinecomponents.com BC546C
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    Find more 100V,100MA TRANSISTOR price and stock on Findchips.com

    100V,100MA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fzt 655

    Abstract: FZT marking code
    Text: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA


    Original     		PDF FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code

    3A 100V npn LOW SATURATION VOLTAGE

    Abstract: TSD2098 TSD2098A
    Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics


    Original     		PDF TSD2098A OT-89 100mA TSD2098ACY 3A 100V npn LOW SATURATION VOLTAGE TSD2098 TSD2098A

    A08 transistor

    Abstract: No abstract text available
    Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics


    Original     		PDF TSD965A 100mA TSD965ACT A08 transistor

    t6753

    Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


    Original     		PDF ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725

    FMMT493

    Abstract: FMMT593 DSA003699
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V


    Original     		PDF FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA, FMMT493 FMMT593 DSA003699

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V


    Original     		PDF FMMT593 FMMT493 100mA -50mA, 100MHz -250mA -500mA,

    FZT951

    Abstract: FZT953 fzt853 FZT851 DSA003718
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718

    ztx953

    Abstract: IN 3319 B DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*


    Original     		PDF ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


    Original     		PDF ZDT6753 OT223) T6753 -200mA* -100mA* -50mA, -500mA, -100mA, 100MHz

    npn transistor 100v min

    Abstract: NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃


    Original     		PDF HBDW93C O-220 100mA, 100mA npn transistor 100v min NPN Transistor 10A 100V HBDW93C IB 100MA NPN npn DARLINGTON 15A transistor npn ic10A DARLINGTON 3A 100V npn

    pnp transistor 1000v

    Abstract: FZT758 FZT658 DSA003716
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6


    Original     		PDF OT223 FZT758 FZT658 -200mA, -20mA, 20MHz -100mA, -100V -20mA pnp transistor 1000v FZT758 FZT658 DSA003716

    IB 100MA NPN

    Abstract: HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃


    Original     		PDF HBDW94C O-220 -100V -100V, -20mA -100mA IB 100MA NPN HBDW93C HBDW94C VCE 100V transistor power darlington transistor 10A

    ZXT753

    Abstract: No abstract text available
    Text: ZTX653DCSM ZTX753DCSM COMPLEMENTARY NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1 4 0.64 ± 0.06 (0.025 ± 0.003) 3 2 2.54 ± 0.13 (0.10 ± 0.005)


    Original     		PDF ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -100mA 100MHz -500mA -50mA

    zxt753

    Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC
    Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)


    Original     		PDF ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -500mA -50mA zxt753 ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC

    FZT753

    Abstract: FZT653 DSA003715
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –


    Original     		PDF OT223 FZT753 FZT653 FZT753 FZT653 DSA003715

    FZT653

    Abstract: FZT753 DSA003712
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT653 FZT753 FZT653 FZT753 DSA003712

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC

    ZX5T953GTA

    Abstract: ZX5T953G ZX5T953GTC x5t953
    Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953

    ZXTP2013Z

    Abstract: ZXTP2013ZTA
    Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA

    b063

    Abstract: Concord Electronics DDG0133 Pirgo Electronics
    Text: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)


    OCR Scan     		PDF 13A0133 DDG0133 100mA 100mA, 500mA, 100mA 125mA b063 Concord Electronics Pirgo Electronics

    Untitled

    Abstract: No abstract text available
    Text: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V


    OCR Scan     		PDF 13A0133 0043STB DD00133 PG6003 100mA 100mA, 500mA, 125mA

    PIR60

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V


    OCR Scan     		PDF IA3A0131 100mA 500mA, PIR60

    API Electronics

    Abstract: iC-LA vce 1v Pirgo Electronics
    Text: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V


    OCR Scan     		PDF 100mA 500mA, API Electronics iC-LA vce 1v Pirgo Electronics

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711