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    100V, 200 A MOSFET Search Results

    100V, 200 A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    100V, 200 A MOSFET Price and Stock

    Crydom Inc D1D12

    Solid State Relay - 3.5-32 VDC Control - 12 A Max Load - 100 VDC Operating - Mosfet Output - Screws And Clamps Termination - Panel Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com D1D12 436
    • 1 $63.16
    • 10 $62.24
    • 100 $58.27
    • 1000 $57.13
    • 10000 $57.13
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    Microchip Technology Inc APT5020BVFRG

    Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT5020BVFRG 200
    • 1 -
    • 10 $10.56
    • 100 $8.4
    • 1000 $8.15
    • 10000 $8.15
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    Crydom Inc D1D60

    Solid State Relay - 3.5-32 VDC Control - 60 A Max Load - 100 VDC Operating - Mosfet Output - Screws And Clamps Termination - Panel Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com D1D60 68
    • 1 $140.98
    • 10 $132.18
    • 100 $124.9
    • 1000 $123.66
    • 10000 $123.66
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    Microchip Technology Inc APT24M80S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT24M80S
    • 1 -
    • 10 $11.34
    • 100 $9.62
    • 1000 $9.1
    • 10000 $9.1
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    Microchip Technology Inc APT4014BVFRG

    Trans MOSFET N-CH 400V 28A 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT4014BVFRG
    • 1 -
    • 10 $10.48
    • 100 $9
    • 1000 $8.41
    • 10000 $8.41
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    Find more 100V, 200 A MOSFET price and stock on Findchips.com

    100V, 200 A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP12N10L RFP12N10L

    4957

    Abstract: 0-12V 2204B SD3931-10
    Text: VRF190E 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original     		PDF VRF190E 150MHz VRF190E VRF190. M174A 30MHz, 150MHz, SD3931-10 4957 0-12V 2204B

    transformer 0-12v

    Abstract: ATC 4400
    Text: VRF190E G VRF190EMP(G) 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original     		PDF VRF190E VRF190EMP 150MHz VRF190. M174A 30MHz, 150MHz, SD3931-10 Complian800 transformer 0-12v ATC 4400

    2204B

    Abstract: 0-12V
    Text: VRF191 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF191 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF191 150MHz VRF191 30MHz, 150MHz, 2204B 0-12V

    0-12V

    Abstract: 2204B SD3931-10
    Text: VRF190E VRF190EMP 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original     		PDF VRF190E VRF190EMP 150MHz VRF190E VRF190. M174A 30MHz, 150MHz, SD3931-10 0-12V 2204B

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN120P20T 300ns E153432 150nds 120P20T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS


    Original     		PDF IXTN120P20T 300ns E153432 120P20T

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXTR120P20T 300ns ISOPLUS247 E153432 -55nds 120P20T

    Untitled

    Abstract: No abstract text available
    Text: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G


    Original     		PDF APTM20UM05S

    IXTR120P20T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTR120P20T 300ns ISOPLUS247 E153432 120P20T IXTR120P20T

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR68P20T RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR68P20T ISOPLUS247 E153432 -100V 68P20T

    IXTN120P20T

    Abstract: IXTN120
    Text: Advance Technical Information IXTN120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN120P20T 300ns E153432 120P20T IXTN120P20T IXTN120

    IXTR120P20T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXTR120P20T 300ns ISOPLUS247 E153432 120P20T IXTR120P20T

    ixtk120p

    Abstract: No abstract text available
    Text: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTK120P20T IXTX120P20T 300ns O-264 120P20T ixtk120p

    IXTR68P20T

    Abstract: DS100375 DS-100-375
    Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375

    IXTR140P10T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR140P10T -100V ISOPLUS247 E153432 -140A 140P10T IXTR140P10T

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTK120P20T IXTX120P20T = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTK120P20T IXTX120P20T 300ns O-264 120P20T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR140P10T RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTR140P10T -100V ISOPLUS247 E153432 140P10T

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol


    OCR Scan     		PDF 67N10 75N10

    N mosfet 100v 200A

    Abstract: Mosfet 100V 50A EE-CM mosfet 200A SDF200NA10 1D20A
    Text: Æ lltro n PRQPUCT CÂTÂLQQ N-CHANNEL ENHANCEMENT MOS FET 200 A , 100V, o.onn SDF200NA10 HE • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF200NA10 MIL-STD-883 300ns. N mosfet 100v 200A Mosfet 100V 50A EE-CM mosfet 200A 1D20A

    Diode D25 N10 R

    Abstract: 365R IXYs M ir 931 Diode D25 N10 P
    Text: VDSS HiPerFET Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100V 100 V D ^D25 DS on 67 A 25 mi2 75 A 20 m il t ^ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 90 G As Symbol Test Conditions V DSS Tj = 25CC to 150°C 100 V VOOB


    OCR Scan     		PDF 67N10 75N10 1XFM67W0 75N10 Diode D25 N10 R 365R IXYs M ir 931 Diode D25 N10 P

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    irf*234 n

    Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
    Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5


    OCR Scan     		PDF 4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10

    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210