Untitled
Abstract: No abstract text available
Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as
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RFP12N10L
RFP12N10L
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4957
Abstract: 0-12V 2204B SD3931-10
Text: VRF190E 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without
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VRF190E
150MHz
VRF190E
VRF190.
M174A
30MHz,
150MHz,
SD3931-10
4957
0-12V
2204B
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transformer 0-12v
Abstract: ATC 4400
Text: VRF190E G VRF190EMP(G) 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without
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VRF190E
VRF190EMP
150MHz
VRF190.
M174A
30MHz,
150MHz,
SD3931-10
Complian800
transformer 0-12v
ATC 4400
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2204B
Abstract: 0-12V
Text: VRF191 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF191 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF191
150MHz
VRF191
30MHz,
150MHz,
2204B
0-12V
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0-12V
Abstract: 2204B SD3931-10
Text: VRF190E VRF190EMP 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without
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Original
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VRF190E
VRF190EMP
150MHz
VRF190E
VRF190.
M174A
30MHz,
150MHz,
SD3931-10
0-12V
2204B
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings
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IXTN120P20T
300ns
E153432
150nds
120P20T
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS
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IXTN120P20T
300ns
E153432
120P20T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
-55nds
120P20T
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Untitled
Abstract: No abstract text available
Text: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G
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APTM20UM05S
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IXTR120P20T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings
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IXTR120P20T
300ns
ISOPLUS247
E153432
120P20T
IXTR120P20T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR68P20T RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR68P20T
ISOPLUS247
E153432
-100V
68P20T
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IXTN120P20T
Abstract: IXTN120
Text: Advance Technical Information IXTN120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings
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IXTN120P20T
300ns
E153432
120P20T
IXTN120P20T
IXTN120
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IXTR120P20T
Abstract: No abstract text available
Text: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS
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IXTR120P20T
300ns
ISOPLUS247
E153432
120P20T
IXTR120P20T
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ixtk120p
Abstract: No abstract text available
Text: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK120P20T
IXTX120P20T
300ns
O-264
120P20T
ixtk120p
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IXTR68P20T
Abstract: DS100375 DS-100-375
Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR68P20T
ISOPLUS247
E153432
68P20T
IXTR68P20T
DS100375
DS-100-375
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IXTR140P10T
Abstract: No abstract text available
Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
-140A
140P10T
IXTR140P10T
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTK120P20T IXTX120P20T = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings
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IXTK120P20T
IXTX120P20T
300ns
O-264
120P20T
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR140P10T RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR140P10T
-100V
ISOPLUS247
E153432
140P10T
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Untitled
Abstract: No abstract text available
Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol
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67N10
75N10
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N mosfet 100v 200A
Abstract: Mosfet 100V 50A EE-CM mosfet 200A SDF200NA10 1D20A
Text: Æ lltro n PRQPUCT CÂTÂLQQ N-CHANNEL ENHANCEMENT MOS FET 200 A , 100V, o.onn SDF200NA10 HE • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF200NA10
MIL-STD-883
300ns.
N mosfet 100v 200A
Mosfet 100V 50A
EE-CM
mosfet 200A
1D20A
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Diode D25 N10 R
Abstract: 365R IXYs M ir 931 Diode D25 N10 P
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100V 100 V D ^D25 DS on 67 A 25 mi2 75 A 20 m il t ^ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 90 G As Symbol Test Conditions V DSS Tj = 25CC to 150°C 100 V VOOB
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67N10
75N10
1XFM67W0
75N10
Diode D25 N10 R
365R
IXYs M
ir 931
Diode D25 N10 P
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
AN-966.
-250V
AN-964D
HEXFET III - A new Generation of Power MOSFETs
irf 1490
AN-964D
irfc9024
AN-966
1000V P-channel MOSFET
application new hexfet
AN966
transistor 9527
IRFC210
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