Untitled
Abstract: No abstract text available
Text: ELM651DA CV/CC モード 36V 降圧 5A DC/DC コンバータ •概要 ELM651DA は降圧型スイッチングレギュレータです。 出力スイッチとして 40V P チャンネルパワー MOSFET を内 蔵しています。 ELM651DA は 8V から 36V までの広い入力電圧範囲を 5A 出力に変換します。
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ELM651DA
ELM651DA
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7803 3V 1A positive voltage regulator
Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.
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1-800-4-LINEAR
LW100815KU
7803 3V 1A positive voltage regulator
4x5 led display
12V, 350mA LED driver
LT3476
LTC3454
sw 2604 ic
datasheet for 4x4 keyboard
03 07 qfn 3x3
F QFN 3X3
LT3755
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PDH3316
Abstract: PDH5022 PS1608 PS5022 PD5022MT681 PD3340 PS1608MT103
Text: INDEX SMD Power Inductor Non-shielding PDH5022 1 PDH3316 2 PDH1813 3 PD5022 4 PD3340 5 PD3316 6 PD3308 7 PD1608 8 PCD Series 9 Shielding PS5022 13 PS3316 14 PS1608 15 PT3316 18 PT1608 19 PCS Series 21 Packaging 26 Environmental 27 Viking SMD Power Inductor PDH5022
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PDH5022
PDH3316
PDH1813
PD5022
PD3340
PD3316
PD3308
PD1608
PS5022
PS3316
PDH3316
PDH5022
PS1608
PS5022
PD5022MT681
PD3340
PS1608MT103
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0239 LA73026AV Monolithic Linear IC Double Scart Interface IC http://onsemi.com Overview This LA73026AV is a double scart PAL/SECAM 21pin interface IC. Functions • AV switches • Changeable Gain AMP • 6dB AMP + driver • FSS output
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ENA0239
LA73026AV
LA73026AV
21pin)
A0239-13/13
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CV5220
Abstract: smd inductors 4.7uH 20A IF transformers 10.7 mhz CV103 CV20-4R7
Text: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Type Induc. Rated DC DCR, SR F 1 KHz Current max Ω MHz , min C A1 C A2 C A3 A (Max.)
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FA081A
GF-061.
CV5220
smd inductors 4.7uH 20A
IF transformers 10.7 mhz
CV103
CV20-4R7
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IF transformers 10.7 mhz
Abstract: INDUCTORS 30 uh 20a
Text: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Type Induc. Rated DC DCR, SR F 1 KHz Current max Ω MHz , min C A1 C A2 C A3 A (Max.)
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FA081A
GF-061.
IF transformers 10.7 mhz
INDUCTORS 30 uh 20a
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Inductors
Abstract: coils induct IF transformers 10.7 mhz CV-SERIES smd inductors 4.7uH 20A smd inductors .33uH 20A 50uh 100uH 5A smd transistor H 7
Text: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RoHS Term.W is RoHS compliant & 260°C compatible RESISTORS CAPACITORS COILS DELAY LINES SERIES CA AXIAL LEAD SPECIFICATIONS RCD Type Induc. Rated DC DCR, SR F 1 KHz Current max Ω MHz , min C A1 C A2 C A3 A (Max.)
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FA081B
GF-061.
Inductors
coils
induct
IF transformers 10.7 mhz
CV-SERIES
smd inductors 4.7uH 20A
smd inductors .33uH 20A
50uh
100uH 5A
smd transistor H 7
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V10220
Abstract: V10470 smd inductors .33uH 20A V10271 smd inductors 4.7uH 20A V1047 IF transformers 10.7 mhz smd 222 150UH V10150C
Text: FILTER CHOKES, 1 to 25 AMP CA, CH, CV SERIES RESISTORS CAPACITORS COILS DELAY LINES Term.W is RoHS compliant & 260°C compatible RoHS SERIES CA AXIAL LEAD SPECIFICATIONS RCD Ty pe Induc. R ated D C D C R , SR F 1 K H z C urrent max Ω MH z , min C A1 C A2
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FA081B
GF-061.
V10220
V10470
smd inductors .33uH 20A
V10271
smd inductors 4.7uH 20A
V1047
IF transformers 10.7 mhz
smd 222
150UH
V10150C
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A1507
Abstract: No abstract text available
Text: Ordering number : ENA1507A ATP212 N-Channel Power MOSFET http://onsemi.com 60V, 35A, 23mΩ, Single ATPAK Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1507A
ATP212
PW10s)
PW10s,
L100H,
A1507-7/7
A1507
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Untitled
Abstract: No abstract text available
Text: LT1934/LT1934-1 Micropower Step-Down Switching Regulators in ThinSOT and DFN FEATURES n n n n n n n n n DESCRIPTION The LT 1934 is a micropower step-down DC/DC converter with internal 400mA power switch, packaged in a low profile 1mm ThinSOT. With its wide input range of 3.2V
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LT1934/LT1934-1
400mA
LT1934
LTC3411
LTC3412
TSSOP16E
LTC3430
200kHz,
1934fe
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ltxp
Abstract: 4TPB100M GMK325BJ225MN LT1934 LT1934-1 MBR0540 LTF8
Text: LT1934/LT1934-1 Micropower Step-Down Switching Regulators in ThinSOT and DFN DESCRIPTION FEATURES n n n n n n n n n Wide Input Voltage Range: 3.2V to 34V Micropower Operation: IQ = 12 A 5V at 250mA from 6.5V to 34V Input LT1934 5V at 60mA from 6.5V to 34V Input (LT1934-1)
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LT1934/LT1934-1
250mA
LT1934)
LT1934-1)
200mV
300mA
OT-23
ltxp
4TPB100M
GMK325BJ225MN
LT1934
LT1934-1
MBR0540
LTF8
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8985A ATP216 N-Channel Power MOSFET http://onsemi.com 50V, 35A, 23mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=17mΩ(typ.) 1.8V drive Protection diode in Slim package Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C
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EN8985A
ATP216
PW10s)
PW10s,
L100H,
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LTF8
Abstract: LTajb ltxp ltxp regulator LCFZ LT1934-1 mark 2L SOT-23 4TPB100M GMK325BJ225MN LT1934
Text: LT1934/LT1934-1 Micropower Step-Down Switching Regulators in ThinSOT and DFN FEATURES DESCRIPTION n The LT 1934 is a micropower step-down DC/DC converter with internal 400mA power switch, packaged in a low profile 1mm ThinSOT. With its wide input range of 3.2V
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LT1934/LT1934-1
400mA
LT1934
LTC3411
LTC3412
TSSOP16E
LTC3430
200kHz,
1934fe
LTF8
LTajb
ltxp
ltxp regulator
LCFZ
LT1934-1
mark 2L SOT-23
4TPB100M
GMK325BJ225MN
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Untitled
Abstract: No abstract text available
Text: ELM650DA CC/CV モード 36V 降圧 2A DC/DC コンバータ •概要 ELM650DA は降圧型スイッチングレギュレータです。 出力スイッチとして 40V P チャンネルパワー MOSFET を内 蔵しています。 ELM650DA は 8V から 36V までの広い入力電圧範囲から 2A 出力に変換できます。
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ELM650DA
ELM650DA
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A1507
Abstract: ATP212
Text: ATP212 Ordering number : ENA1507 SANYO Semiconductors DATA SHEET ATP212 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4V drive. Halogen free compliance. Specifications
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ATP212
ENA1507
PW10s)
PW10s,
A1507-4/4
A1507
ATP212
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Untitled
Abstract: No abstract text available
Text: ATP216 Ordering number : EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP216 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=17mΩ(typ.) 1.8V drive • • Slim package Halogen free compliance Specifications
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EN8985
ATP216
PW10s)
PW10s,
L100Hend
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ASTX-11
Abstract: ABS06
Text: ABRAC O N P RO DUC T CATAL O G September 2013 Crystals Real-Time Clocks Oscillators Filters Precision Timing RF & Microwave Magnetics & Capacitors Engineered Solutions Oscillators ASG 7.0 x 5.0 x 2.0mm Precision Timing Solutions ABLNO 9.2 x 14.8 x 5.5 mm SMT
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ABS07
100MHz
70MHz
C2013-01214
ASTX-11
ABS06
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ATP212-TL-H
Abstract: Atp212
Text: ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP212 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in
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ATP212
ENA1507A
A1507-7/7
ATP212-TL-H
Atp212
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"Power MOSFET"
Abstract: 12V P-Channel Power MOSFET 2SJ472-01L
Text: 2SJ472-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack L High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof K-Pack(S) Applications
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2SJ472-01L
00A/s
"Power MOSFET"
12V P-Channel Power MOSFET
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Untitled
Abstract: No abstract text available
Text: ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP212 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in
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ATP212
ENA1507A
A1507-7/7
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Untitled
Abstract: No abstract text available
Text: ATP216 Ordering number : EN8985A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP216 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=17mΩ(typ.) 1.8V drive Protection diode in Slim package Halogen free compliance
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ATP216
EN8985A
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Untitled
Abstract: No abstract text available
Text: ATP216 Ordering number : EN8985A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP216 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=17mΩ(typ.) 1.8V drive Protection diode in Slim package Halogen free compliance
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ATP216
EN8985A
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Untitled
Abstract: No abstract text available
Text: 1. M echan ical Dim ensions: 2. S c h e m a tic : o- D 0 .3 7 5 Max o- E le c tr i c a l In d u c ta n c e : S p e cifica tio n s: 100uH ±15% R ated C u rre n t: Q: 0 .3 3 0 Typ Lead Dia.: 0 .0 1 7 22 1 ,75A dc B ased on a 10% OCL D rop Min @ 100KHz, O .IV rm s
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OCR Scan
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PDF
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MIL-STD-202,
UL94-V-0
E151556
100uHÂ
250mV
75Adc
100KHz,
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uis test
Abstract: BUZ45 BUZ21
Text: F=7 SCS-THOMSON “ / # » [¡» » Ë lL Iiê ïE M O Ê S TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped
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OCR Scan
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BUZ45
BUZ21
100pH
uis test
BUZ45
BUZ21
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