2020B
Abstract: No abstract text available
Text: 奥脉络产品展示中心——物位测量仪表-2020B系列液位变送器 页码，1/2 2020B系列液位 2020B系列液位变 系列液位变送器 2000系列静压式液位变送器采用全不锈钢结构的激光温补硅传感膜片和绝对工业
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-----2020B
2020B
420mA010mA
2000420mA)
0100mV
420mA
0100mH2O
DC010mA15V
2020B
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LM33
Abstract: 02mH2O
Text: FB0803SW 扩散硅型智能液位变送器 一概述 FB0803SW 扩散硅型智能液位变送器，在结构上去掉了“O”型圈密封，完全采用焊接工艺，将传感器焊接于基座中，增加了可靠性。信号 处理采用微处理器，对压力信号采用多项式拟合运算，并在-10℃～80℃范围内进行精确温度修正。采用 HART 通讯技术，可方便的调整
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FB0803SW
FB0803SWA
01mH2O
02mH2O
05mH2O
010mH2O
020mH2O
050mH2O
LM33
02mH2O
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FB0803WF
Abstract: FB0803 K1010 DCK-1010
Text: FB0803W 扩散硅型投入式液位变送器 一概述 FB0803W 扩散硅型投入式液位变送器采用了高精度隔离膜敏感元件及高性能的转换电路，独特的密封工艺使各产品能够长期可靠稳定的在 水下及其它液体介质中使用。
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FB0803W
FB0803WF
01mH2O
05mH2O
FB0803WE
0200mH2O
FB0803WF
FB0803
K1010
DCK-1010
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Untitled
Abstract: No abstract text available
Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF254B Maximum Rating* Vceo Values 20 Vca 30 Symbol Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current
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BF254B
BF254
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Crosspoint Switches
Abstract: No abstract text available
Text: Selection Guide VIDEO CROSSPOINT SWITCHES: {NOTE 2} DEVICE Typical Values at 25°C, Unless Otherwise Specified FEATURES DIF. GAIN % DIF. PHASE (DEG) 0.1dB FLAT GAIN (MHz) BW (MHz) SLEW RATE (V /H S ) SUPPLY 10MHz VOLTAGE CROSSTALK RANGE (dB) (±V) SUPPLY
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10MHz
HA4600
HA4201
HA4244
HA4314B
HA4404B
HA4344B
HA455
HA456
Crosspoint Switches
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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Untitled
Abstract: No abstract text available
Text: 6 I- DESCRIPTION REV PER EC OS! 3—0650—04 MATERIALS: -HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0. -SHIELD - .010" THICK, C26800 BRASS PREPLATED WITH 30ji INCH MIN SEMI-BRIGHT NICKEL.SOLDER TABS POST DIPPED WITH 100|llNCH MIN SAC SOLDER.
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C26800
30jiINCH
50jiINCH
100pjJNCH
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1316D
Abstract: No abstract text available
Text: Product specification Philips Semiconductors 1 GHz LNA and mixer NE/SA600 DESCRIPTION PIN CONFIGURATION The N E /S A 6 0 0 is a co m b in e d lo w n oise a m p lifie r LN A and m ixer D P a ckag e d esigned fo r hig h -p e rfo rm a n c e lo w -p o w e r co m m u n ic a lio n system s
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-10dB
NE/SA600
1316D
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EC1002
Abstract: 325j a SI-51005-F
Text: RoHS 2002/95ÆC. TH E INFORMATION CONTAINED H E R EIN IS CO N SIDERED "P R O P R IE T A R Y " TO D E L F O S E INC, AND S H A L L NOT DE C O P IED , REPRODOCED DR D IS C L O S E D V ITH O O T THE W R ITT E N A P P R O V A L OF D E L F O S E INC, ELECTRICAL CHARACTERISTICS @ 25°C
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350uH
550uH
P9-P10)
500kHz
40MHz
10/100/1000BT
-51005-B
EC1002
325j a
SI-51005-F
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Untitled
Abstract: No abstract text available
Text: ÜÜÜÜpF I 21 V 1 : 1 75 ;p s -t SU U U U ^ - _r~ \_ 1 ! 1 . fP 3 > J în rrT ^ 75 p i) ELECTRICAL SPECIFICATIONS: NETEE 1.0 TURNS RATIO: ( P 3 - P 5 - P 6 ) : ( J 3 - J 6 ) (P 1 -P 4 -P 2 ) : (J1 -J2 ) 1CT : 1CT+ 3% 1CT : 1CT + 3% 2.0 INDUCTANCE: 3 5 0 uH MIN.
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350uH
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S18DE
Abstract: No abstract text available
Text: TH E IN F O R M A T IO N C O N TA IN E D H E R E IN IS C O N S ID E R E D "P R O P R IE T A R Y ” TO B E L E U S E IN C . A N D S H A L L N O T BE C O P IE D , R E P R O D U C E D O R D IS C L O S E D W ITH O U T TH E W RITTEN A P P R O V A L O F B E L F U S E INC.
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2002/95/Ec
350uH
350uH
S18DE
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC / / MOS INTEGRATED CIRCUII MC-4516BC72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C-4516BC72 is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 p ieces of 64
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-4516B
16M-WORD
72-BIT
MC-4516BC72
uPD4564821
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Untitled
Abstract: No abstract text available
Text: 21 Ü Ü Ü Ü pF I V 1 : 1 75 ;p s _r~\_ - t SU U U U ^- 1 ! 1 . fP3> ELECTRI CAL SPECI FI CATI ONS: 1. 0 RATIO: TURNS 2.0 I NDUCTANCE: 3.0 LEAKAGE 4.0 5.0 NETEE P 3-P 5-P 6) (P 1-P 4-P 2) 1 CT 1 CT : (J3-J6) : (J1-J2) (P1-P2 (P3-P6 I NDUCTANCE: NTERWI NDI NC
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100KH:
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P103
Abstract: No abstract text available
Text: PI 03 Ultra Low Impedance PSDC ISemiconductor Featu£e«_—_i^ — i_ —_— Stabilizes Power Supply Feedback Loop Reduces Power Supply Signal Gain , Effective For Signals: 100<Hz to 100MHz . Effective Impedance for Power Supply Noise Signal:<l Ohm Low Energy Storage(lmportant For Safety Applications
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100MHz
10KHz
10MHz
100MHz
P103
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ka2297
Abstract: CDA 10.7MHZ CDA10 AM/FM tuner 100MHZ AF30
Text: Naui283 AM/FM TUNER The KA2297 is a monolithic integrated circuit which consist of FM F/E AM/FM IF and DET AMP. The KA2297 is no adjustment AM/FM IF, DET coil FEATURES • Not need AM/FM IF, FM DET COIL • Built-in FM Front End • Minimum mumber of external parts required
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Naui283
KA2297
16-DIP-300A
l-70oC
98MHzIifm
60dbp
60dbfi
Naui285
CDA 10.7MHZ
CDA10
AM/FM tuner
100MHZ
AF30
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Untitled
Abstract: No abstract text available
Text: SHIELD 1000pF 2KV J8 J7 J6 J5 J4 J3 J2 J1 TR P4TRP4+ TR P2 TRP3TRP3 + TRP2 + TRP1 TR P1+ ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 - P 2 (P5-P4) (P9-P8) ( P 1 0 —P 1 1 ) 2.0 INDUCTANCE: (J4-J5) (J6-J3) (J8-J7) : (J2 —J ' 1 1 1 1 (P3-P2) ; (P5-P4)
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1000pF
P10-P11
10OKHz,
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amplifier FA-30
Abstract: KTC3194
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC3194
100MHz)
amplifier FA-30
KTC3194
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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Untitled
Abstract: No abstract text available
Text: •‘H Y U M D I U -* H Y 5 7 V 6 5 1 6 1 0 A 2 Banks x 2 U x 16 B tt Synchronous DRAM DESCRIPTION The Hyundai HY57V651610A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610A is organized as 2banks of
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HY57V651610A
864-bit
152x16.
400mil
54pir»
1SE36-
-NOV97
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Untitled
Abstract: No abstract text available
Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage VGS 25 Vdc Forw ard Gate Current 'G F 10 m Adc Total Device D issipation (â T a = 25CC Derate above 253C Pd 350 2.8
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O-226AA)
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motorola 239
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MPC972 M PC973 Low Voltage PLL C lock Driver The MPC972/973 are 3.3V compatible, PLL based clock driver devices targeted for high performance CISC or RISC processor based systems. With output frequencies of up to 200MHz and skews of 350ps
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MPC972/973
200MHz
350ps
200MHz
MPC972
PC973
D7-D12
motorola 239
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Untitled
Abstract: No abstract text available
Text: lÜÜÜpF i 21 V 1 : 1 ;ps 75 -t SUUUU^- O _r~\_ 1 ! 1 . fPU> J în r T T ^ 75 P £ ) UUTPT 1,0 PINO WITHOUT EUECTRICAU CUNNECTIDN APE EMITTED ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: ( P 3 - P 5 - P 6 ) (P 1- P4-P 2) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE:
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W22C
Abstract: S12301DS 5133S stp520 t12m256 T12M256A-12J UPC507 MITAC PC515 GP014
Text: MODEL : 5133S Revision 02A Table of Contents page 1 Cover Sheet Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier 9 Enhance IDE & FDD Connector
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5133S
VT82C686A
1000P
2N7002
2N7002
MLL34B
SCK431CSK-1
OT23N
W22C
S12301DS
stp520
t12m256
T12M256A-12J
UPC507
MITAC
PC515
GP014
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