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    100MA 45 V NPN Search Results

    100MA 45 V NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    100MA 45 V NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BCB47A

    Abstract: No abstract text available
    Text: S TïïTTÏÏTl T ransistors SOT-23 Types SST (Super Slim Transistor Function Pre Am p Low Noise Am p Driver Driver hM f,(M H z) C ob (pF) P ackage 800 1 1 0 -2 5 0 100mA/1 V 150 6 Fig. 16 NPN 45 800 160 ~ 400 100mA/1 V 150 6 Fig 16 NPN 45 100 1 1 0 -2 3 0


    OCR Scan     		800C817-16 BC817-25 BCB47A BC847B BC847C BC84BA BC848B BC848C BC857A BC858A PDF

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598 PDF

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5 PDF

    bcy59x

    Abstract: BCY59-VIII BCY59IX bcy59v BCY59-X bcy59-vii bcy58-x BCY59VII BCY59
    Text: DATA SHEET BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.


    Original     		BCY58, BCY59, BCY59 100mA, bcy59x BCY59-VIII BCY59IX bcy59v BCY59-X bcy59-vii bcy58-x BCY59VII PDF

    Untitled

    Abstract: No abstract text available
    Text: BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon NPN epitaxial planar transistors, mounted in a hermetically sealed metal case, designed


    Original     		BCY58, BCY59, BCY58 BCY59 100mA, PDF

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


    OCR Scan     		2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494 PDF

    ZBD849

    Abstract: transistor bf 970
    Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching


    Original     		ZBD849 ZBD849 transistor bf 970 PDF

    tf600

    Abstract: IC4a ZTX1051A DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762 PDF

    2n5786

    Abstract: 2N5783
    Text: 2N5783 PNP 2N5786 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5783 and 2N5786 types are Complementary Silicon Power Transistors designed for general purpose switching and amplifier applications.


    Original     		2N5783 2N5786 160mA 800mA 100mA, 2N5783) 200kHz PDF

    ZETEX T1049

    Abstract: T1049 ZDT1049 DSA003723
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage


    Original     		ZDT1049 OT223) T1049 50MHz 100mA ZETEX T1049 T1049 ZDT1049 DSA003723 PDF

    d44c5

    Abstract: d44c9 D44C11
    Text: D44C SERIES w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER


    Original     		O-220 D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 D44C7 D44C10 D44C8 d44c5 d44c9 D44C11 PDF

    LC32A

    Abstract: 2N5783 2N5786
    Text: Datasheet AU_ 2N5783 2N5786 m TM C e nItw MMil III PNP NPN COM PLEM ENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		2N5783 2N5786 2N5783, 100mA, 2N5783) 200kHz 2N5786) LC32A PDF

    ZTX384C

    Abstract: ztx384 low noise transistor ZTX38
    Text: NPN SILICON PLANAR LOW NOISE TRANSISTOR ZTX384C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Output Capacitance MIN. TYP. MAX. UNIT CONDITIONS. Cobo 2.5 5 pF VCB=10V, f=1MHz Input Capacitance Cibo 11 pF VEB=0.5V, f=1MHz


    Original     		ZTX384C 15KHz 100mA, ZTX384C ztx384 low noise transistor ZTX38 PDF

    ztx1049a

    Abstract: DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995


    Original     		ZTX1049A 100ms ztx1049a DSA003762 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIE NO. NPN Medium Power TRANSISTOR DIE No. IMAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 45 V Collector-Base Voltage VcBO 45 V Emitter-Base Voltage Vebo 5 V Parameter D—15 • DESCRIPTION Collector Current Continuous


    OCR Scan     		D--15 PDF

    ZTX1053A

    Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12 PDF

    2N2916

    Abstract: No abstract text available
    Text: 2N2914 2N2916 2N2918 S EM E LA B MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)


    Original     		2N2914 2N2916 2N2918 100mA 2N2916 PDF

    2N2916

    Abstract: 2N2918 2N2914 2N2916 Transistor
    Text: 2N2914 2N2916 2N2918 SEME LAB MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021)


    Original     		2N2914 2N2916 2N2918 100mA 2N2916 2N2918 2N2914 2N2916 Transistor PDF

    2N2915

    Abstract: 2N2917 2N2913 2n2917 dual transistor
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 100mA 2N2915 2N2917 2N2913 2n2917 dual transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 100mA PDF

    D44C5

    Abstract: D44C7 D44C6 d44c8 D44c3 TRANSISTOR D44C11 Data d44c1 D44C4 D44C10 D44C9
    Text: DATA SHEET D44C SERIES NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR D44C Series types are NPN Silicon Power Transistors designed for general-purpose amplifier and switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted


    Original     		O-220 D44C1 D44C2 D44C3 D44C4 D44C5 D44C6 D44C7 D44C8 D44C9 D44c3 TRANSISTOR D44C11 Data D44C10 PDF

    BCY79C

    Abstract: BCY79B
    Text: BCY79 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) GENERAL PURPOSE, SMALL SIGNAL, PNP TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL NPN


    Original     		BCY79 O-206AA) -10mA -100mA -10mA, -100mA -10mA BCY79C BCY79B PDF

    2N2913

    Abstract: 2N2915
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 2N2913DCSM" 2N2913DCSM 2N2913DCSM-JQR-B 5/10u 60MHz PDF

    ZTX618

    Abstract: ZTX718 DSA003771
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1


    Original     		ZTX618 ZTX718 1995Telephone: ZTX618 ZTX718 DSA003771 PDF