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    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 35uH Min @100KHz,50mV Inductance: at -40ºC 20uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Primary Pins: 2-6


    Original     		PDF 100KHz TMT40001CS 1500Vrms TMD00139

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6


    Original     		PDF 100KHz TMT4003CT 1500Vrms TMT40003CT TMD00141

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 45uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6


    Original     		PDF 100KHz TMT40002CS 1500Vrms TMD00140

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 35uH Min @100KHz,50mV Inductance: at -40ºC 20uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Primary Pins: 2-6


    Original     		PDF 100KHz TMT4004CT 1500Vrms TMT40004CT TMD00142

    ISOLATION TRANSFORMER

    Abstract: 220 110 transformer
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=200µH MIN @100KHz,20mV Leakage Inductance: L.K=0.25µH MAX @100KHz,20mV DCR=0.3 Ohms MAX @ 25°C Turns Ratio: Transmit 1CT:1CT ±5% @100KHz,20mV Receive 1CT:1CT ±5% @100KHz,20mV Interwinding Capacitance C=15pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20055CT 10BASE-T TMD00379 ISOLATION TRANSFORMER 220 110 transformer

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio:Transmit/Receive PRI:SEC1:2.42±2% @100kHz,50mV. Inductance: Transmit/Recive 1.2/1.2mH Min @100kHz,50mV. Leakage Inductance: Transmit/Recive 0.5/0.5uH Max @100kHz,50mV. Interwinding Capacitance:25/25pF Max @100kHz,50mV


    Original     		PDF 100kHz 25/25pF 19-20Recieive 1500Vrms TMT50163CS TMD00232

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=200µH MIN @100KHz,20mV Leakage Inductance: L.K=0.5µH MAX @100KHz,20mV DCR=0.4 Ohms MAX @25°C Turns Ratio: Transmit 1CT:2.5CT±5% @100KHz,20mV Receive 1CT:1CT±5% @100KHz,20mV Interwinding Capacitance C=15pF MAX @100KHz,20mV


    Original     		PDF 100KHz 10BASE-T TML20041CS TMD00365

    10BA

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=112µH MIN @100KHz,20mV Leakage Inductance: L.K=0.8µH MAX @100KHz,20mV DCR=0.3 Ohms MAX @ 25°C Turns Ratio: Transmit 1CT:2CT ±5% @100KHz,20mV Receive 1CT:1CT ±5% @100KHz,20mV Interwinding Capacitance C=8pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20046CS 10BASE-T TMD00370 10BA

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=140µH MIN @100KHz,20mV Leakage Inductance: L.K=1µH MAX @100KHz,20mV DCR=0.3 Ohms MAX @ 25°C Turns Ratio: Transmit 2CT:1CT ±5% @100KHz,20mV Receive 1CT:1CT ±5% @100KHz,20mV Interwinding Capacitance C=12pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20045CS 10BASE-T TMD00369

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=200µH MIN @100KHz,20mV Leakage Inductance: L.K=0.3µH MAX @100KHz,20mV DCR=0.3 Ohms MAX @25°C Turns Ratio: Transmit 1CT:1CT±5% @100KHz,20mV Receive 1CT:1CT±5% @100KHz,20mV Interwinding Capacitance C=12pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20037CS 10BASE-T TMD00361

    10BA

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=200µH MIN @100KHz,20mV Leakage Inductance: L.K=0.2µH MAX @100KHz,20mV DCR=0.3 Ohms MAX @25°C Turns Ratio: Transmit 1CT:1CT±5% @100KHz,20mV Receive 1CT:1CT±5% @100KHz,20mV Interwinding Capacitance C=10pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20036CS 10BASE-T TMD00360 10BA

    C15PF

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=110µH MIN @100KHz,20mV Leakage Inductance: L.K=0.4µH MAX @100KHz,20mV DCR=1.0 Ohms MAX @25°C Turns Ratio: Transmit 1CT: 2CT±5% @100KHz,20mV Receive 1CT: 1CT±5% @100KHz,20mV Interwinding Capacitance C=15pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20038CS 10BASE-T TMD00362 C15PF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=350µH MIN @100KHz,20mV Leakage Inductance: L.K=0.8µH MAX @100KHz,20mV DCR=0.6 Ohms MAX @ 25°C Turns Ratio: Transmit 1CT:2.5CT ±5% @100KHz,20mV Receive 1CT:1CT ±5% @100KHz,20mV Interwinding Capacitance C=30pF MAX @100KHz,20mV


    Original     		PDF 100KHz TML20042CS 10BASE-T TMD00366

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=200µH MIN @100KHz,20mV Leakage Inductance: L.K=0.5µH MAX @100KHz,20mV DCR=0.6 Ohms MAX @ 25°C Turns Ratio: Transmit 1CT: 2CT ±5% @100KHz,20mV Receive 1CT: 1CT ±5% @100KHz,20mV Interwinding Capacitance C=12pF MAX@100KHz,20mV


    Original     		PDF 100KHz TML20043CS 10BASE-T TMD00367

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Inductance: 100uH Min @100KHz,50mV@25°C Inductance: 40uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1:1±2% @100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.110uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV


    OCR Scan     		PDF 100uH 100KHz Bandwith75 340MHz 110uH 1500Vrms

    0540X

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio pri:sec±5% : TX=1:2.42 @100kHz,50mV RX=1:2.42 @100kHz,50mV Inductance: 0.6mH & 0.6mH Min @100kHz,50mV Interwinding Capacitance: 35pF & 35pF Max @100kHz,50mV Leakage Inductance: 0.60uH & 0.60uH Max @100kHz,50mV mu Transtek M agnetics


    OCR Scan     		PDF 100kHz 1500Vrms 0540X TMT50212CS TMD00486

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Inductance: 40uH Min @100KHz,50mV@25°C Inductance: 19uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1CT:1CT±2% @100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.10uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV


    OCR Scan     		PDF 100KHz Bandwith75 340MHz 1500Vrms TMT40018CS

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Tx Inductance: 100uH Min @100KHz.50mV @25°C Rx Inductance: 100uH Min @100KHz.50mV @25°C Tx Inductance: 40uH Min @100KHz.50mV @-40°C Rx Inductance: 40uH Min @100KHz.50mV @-40°C Tx Turns Ratio : 1:2CT±2%@100KHz,50mV Rx Turns Ratio : 1:1 ±2% @100KHz,50mV


    OCR Scan     		PDF 100uH 100KHz 10pF/10pF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Inductance: 100uH Min @100KHz,50mV @25°C Inductance: 40uH Min @100KHz,50mV @-40°C PRI:SEC Turns Ratio: 1:1 ±2%@100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.110uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV


    OCR Scan     		PDF 100uH 100KHz Bandwith75 340MHz 110uH 1500Vrms

    Untitled

    Abstract: No abstract text available
    Text: mil ELECTRICAL CHARACTERISTICS: Inductance: 22mH Min @100KHz,50mV Leakage Inductance: 5uH Max @100KHz,50mV Turns Ratio Pri:Sec : 1:1 @100KHz,50mV DC Resistance(Pri/Sec): 1.5 Ohms /1.5 Ohms Max @25°C Cww : 40pF Max @100KHz,50mV CD: 25pF Max @100KHz,50mV Transtek M agnetics


    OCR Scan     		PDF 100KHz 1500Vrms TMT30052CS TMD00246

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Inductance: 40uH Min @100KHz,50mV@25°C Inductance: 19uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1:2CT±2% @100KHz,50mV Bandwith75 Ohms System: 0.25~500MHz TYP Leakage lnductance:0.110uH Max@100KHz,0.5mV Interwinding Capacitance: 12pF Max @100KHz,50mV


    OCR Scan     		PDF 100KHz Bandwith75 500MHz 110uH 1500Vrms TMT40015CS

    Untitled

    Abstract: No abstract text available
    Text: mil ELECTRICAL CHARACTERISTICS: Inductance: 22mH Min @100KHz,50mV Leakage Inductance: 5uH Max @100KHz,50mV Turns Ratio Pri:Sec : 1:2 @100KHz,50mV DC Resistance(Pri/Sec): 1.5 0hms/3.0 Ohms Max @25°C Cww : 40pF Max @100KHz,50mV CD: 25pF Max @100KHz,50mV Transtek M agnetics


    OCR Scan     		PDF 100KHz 1500Vrms TMT30053CS TMD00247

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: rev 1:1±2% @100KHz,50mV Turns Ratio: xmit 1CT:1CT @100KHz,50mV Inductance: 180uH Min @100KHz,50mV Interwinding Capacitance: lOpF Max @100KHz,50mV Leakage Inductance: 0.30uH Max @100KHz,50mV Return Loss: 5 to 10MHz -20/-15dB Min 100Q/98±13Q


    OCR Scan     		PDF 100KHz 180uH 10MHz -20/-15dB 100Q/98Â -40dB

    TM-2003

    Abstract: isolation transformer
    Text: ELECTRICAL CHARACTERISTICS: Sine Wave Inductance: L=140pH MIN @100KHz,20mV Leakage Inductance: L.K=0.2]iH MAX @100KHz,20mV DCR=0.3 Ohms MAX @25°C Turns Ratio: Transmit 1 QTT 2CT±5%@100KHz,20mV Receive 1CT: 1CT±5% @100KHz,20mV Interwinding Capacitance C=12pF MAX @100KHz,20mV


    OCR Scan     		PDF 140pH 100KHz 10BASE-T TML200S9CS TM20039CS TM-2003 isolation transformer