100JUW Search Results

Lpel

Abstract: Intel 2147H 2147H HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55 hc5v1
Contextual Info: H M 6147H S e r ie s Maintenance Only 4096-word x 1-bit High Speed CMOS Static RAM FEATURES » High Speed: Fast Access Time 35ns/45ns/55ns (max. » Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5 p W (typ.) (L-version), O peration: 150mW typ.

hm6287

Abstract: 6287p
Contextual Info: HM6287 Series 6553-word x 1-bit High Speed CMOS Static RAM • FEA TU RES HM6287P Series • High Speed: Fast Access Time 45/55/70ns max. • Single 5V Supply and High Density 22 Pin Package • Low Power Standby and Low Power Operation Standby: 100juW (typ.)/10)uW (typ.) (L-version)

Contextual Info: H M 6 1 1 7 P -3 , H M 6 1 1 7 P - A 2 0 4 8 -w o rd x 8 -b it High Speed Static CMOS RAM •FEA TURES • Single 5V Supply and High Density 24 pin Package. • • • • High Speed: Fast Access Tim e 150ns/200ns max. Low Power Standby and Standby: 100juW (typ.)

HM6147

Abstract: NMOS 2147H 2147H HM6147H-35 HM6147HLP-35 HM6147HLP-45 HM6147HLP-55 HM6147HP-35 HM6147HP-45 HM6147HP-55
Contextual Info: Maintenance Only HM6147H Series 4096-word x 1-bit High Speed CMOS Static RAM •FEATURES • • • High Speed: Fast Access Time 35ns/45ns/55ns max. Low Power Standby and Low Power Operation, Standby: 100juW (typ.)/5/nW (typ.) (L-version), O peration: 150mW typ.

KCC CL10

Abstract: capax HM6117P-3 HM6117P-4 Hitachi Scans-001
Contextual Info: H M 6 1 1 7 P - 3 , H M 6 1 1 7 P - 4 2 0 4 8 -w o rd x 8 -b it High S p ee d S ta tic C M O S RAM •FEA TURES • • • Single 5 V S upp ly and H igh D ensity 24 pin Package. High Speed: Fast Access T im e 150ns/200ns m ax. L o w Power S tand by and

3.2768

Contextual Info: CRYSTAL UNIT ATS SMD TYPE SX-5 iR o liS -ATS SMD type package - AT or BT cut available - Resistance weld seal - Tape and reel available - Tight tolerance / stability - Pb-free and RoHS compliance • ELECTRICAL SPECIFICATIONS Frequency Range 3.2768 to 85.000MHz

2102AP-4

Contextual Info: MITSUBISHI LSIs M 5 L2 1 0 2 A P -4 , S-4 1 0 2 4 -B IT 1 0 2 4 -WORD BY 1-BIT STATIC RAM DESCRIPTION This is a fa m ily o f 1024-word by 1-bit N-channel silicongate MOS static RAMs, designed fo r applications where ease o f use is the im p orta n t design object. The devices operate

2102AP-4

Abstract: M5L2102AP-4 100PF 16P1 2102A-4 M5L2102AS-4 03a s4
Contextual Info: M IT S U B IS H I LSIs M5L2102AP-4, S-4 1 0 2 4 -B IT 1 0 2 4 -W 0 R D BY 1-B IT STATIC RAM DESCRIPTION This is a fam ily o f 1024-w ord by 1-bit N-channel silicon­ gate M O S static R A M s, designed fo r applications where ease PIN CONFIGURATION {TOP VIEW)