AD7582BD
Abstract: AD7582TD AD7582 AD7582KN AD7582KP C004 diode TI33 74HC77
Text: A N ALO G CMOS 12-Bit D E V I C E S _ Successive Approximation ADC AD7582 FEATURES 12-Bit Successive Approximation ADC Four High Impedance Input Channels Analog Input Voltage Range of 0 to + 5 V with Positive Reference of + 5V Conversion Time of 100jis per Channel
|
OCR Scan
|
PDF
|
12-Bit
AD7582
100jis
AD7582.
AD585
AD7S82-AD585
AD7582BD
AD7582TD
AD7582KN
AD7582KP
C004 diode
TI33
74HC77
|
Untitled
Abstract: No abstract text available
Text: Multilayer Ceramic Chip Capacitors NMC Series X5R FEATURES • CLASS II DIELECTRIC, TEMPERATURE STABLE • EXCELLENT FREQUENCY CHARACTERISTICS, NON-LINEAR CAPACITANCE CHANGE • HIGHER CAPACITANCE THAN X7R UP TO 100jiF • NICKEL BARRIER TERMINATIONS AND EXCELLENT
|
OCR Scan
|
PDF
|
100jiF)
EIA-198-2E)
0012uF
10Vdc,
16Vdc,
25Vdc
35Vdc,
50Vdc
|
TM27C512
Abstract: No abstract text available
Text: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
|
OCR Scan
|
PDF
|
M27C512
100jiA
FDIP28W
PDIP28
M27C512
TM27C512
|
Untitled
Abstract: No abstract text available
Text: M $ EPROMs ic r o c h ip EPROM Selection Guide CMOS EPROMs TEMP RANGE STANDBY CURRENT J,K,L,P,SO,TS C,l 2mA/100nA J,K,L.P,SO C,l 2mA/100nA +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100jiA 90-200 +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100|iA 70-150 +5V J,K,L,P,SO,TS,VS C,I,E
|
OCR Scan
|
PDF
|
2mA/100nA
2mA/100jiA
2mA/100
2mA/30
1mA/100
2mA/100tiA
27C64
|
Untitled
Abstract: No abstract text available
Text: j l 2,54mm Spec ifications: IDSS, IDSD ^ \ \ Insulator Material: » * Black G ass Filled Polyester Temperature Range: -65°C tc +80°C Contact: BeCu Plating: Au over 50^" (1,27p.m) Ni or Sn over 100ji" (2,54|^m) Cu or 50n” (1, ?7|im) Ni Current Rating:
|
OCR Scan
|
PDF
|
100ji"
63min)
|
Untitled
Abstract: No abstract text available
Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES
|
OCR Scan
|
PDF
|
28F101B
28V101B
150ns
28V101
100jiA
M28V101B
28F101B,
M28F101B,
|
Untitled
Abstract: No abstract text available
Text: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM à - FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100jiA/100|iA ■ Access Times —55/70 (Commercial or Industrial)
|
OCR Scan
|
PDF
|
P4C1256L
70mA/85mA
100jiA/100
144-bit
32Kx8.
1256L
1256L
-55PC
|
Untitled
Abstract: No abstract text available
Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)
|
OCR Scan
|
PDF
|
M27C4002
256Kb
10MHz
100jiA
0020h
0044h
IP40W
PDIP40
M27C4002
FDIP40W
|
M28F102
Abstract: PLCC44 A1006
Text: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
|
OCR Scan
|
PDF
|
M28F102
100jiA
PLCC44
TSOP40
M28F102
TSOP40
7t12I1237
A1006
|
CTX02-13834
Abstract: CTX02-13949-X1 TX02-13713-X1 309J CTX02 13949 CTX-02-13949-X1 LT1533
Text: TECHNOLOGY KATUfKS D iS C R lP T lO n b Greatly Reduced Conducted and Radiated EMI <100jiVp.p in Typical Application b Lo w Switching Harmonic Content b Independent Control of Switch Voltage and Current Slew Rates The LT 1533 isanew class ofswitching regulatordesigned
|
OCR Scan
|
PDF
|
LT1533
LT1129
500mA
LT1175
LT1377
LT1425
LT1534
1533f
CTX02-13834
CTX02-13949-X1
TX02-13713-X1
309J
CTX02 13949
CTX-02-13949-X1
|
MX28F1000
Abstract: macronix flash 12.0v
Text: m A MACRONIX. INC. MX28F1 OOO 1 M-BIT [1 28 K x 8] CMOS FLASH MEMORY FEATURES • 131,072 bytes by 8-bit organization • Fast access time: 90/120/150 ns • Low power consumption - 50mA maximum active current - 100ji A maximum standby current • Programming and erasing voltage 12V ± 0.6V
|
OCR Scan
|
PDF
|
MX28F1
100ji
100mA
32-pin
32-pin16
MX28F1000
MX28F1000
macronix flash 12.0v
|
Untitled
Abstract: No abstract text available
Text: y M U N ITR G D E UCC5622 PRELIMINARY 27 - Line SCSI Terminator With Split Disconnect DESCRIPTION FEATURES Complies with SCSI, SCSI-2, SCSI-3 and FAST-20 Ultra Standards 2.5pF.Channel Capacitance During Disconnect 100jiA Supply Current in Disconnect Mode
|
OCR Scan
|
PDF
|
UCC5622
FAST-20
100jiA
UCC5622
|
KM61257AL
Abstract: No abstract text available
Text: KM61257A/KM61257AL CMOS SRAM 2 5 6 K x 1 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) : 100jiA (max.) L-Version Operating : 100 mA (max.) • Single 5 V ± 1 0 % Power Supply
|
OCR Scan
|
PDF
|
KM61257A/KM61257AL
100jiA
KM61257AP/ALP:
24-pin
KM61257AJ/ALJ:
KM61257A/AL
144-bit
KM61257AL
|
Untitled
Abstract: No abstract text available
Text: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%
|
OCR Scan
|
PDF
|
MX28F002T/B
144x8
70/90/120ns
100jiAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
QGQ117ti
MX2SF002T/B
|
|
|
HM6147
Abstract: 6147H
Text: H M 6 1 4 7 H Serles - — Maintenance Only 4096-word x 1-bit High Speed CMOS Static RAM •FEATURES • • • • • • • • • • • High Speed: Fast Access Time 35 n s/4 5 n s/5 5 n s m ax. Low Power Standby and Low Power O peration, Standby: 100jiW (typ.)/5//W (typ.) (L-version),
|
OCR Scan
|
PDF
|
4096-word
100jiW
150mW
HM0147H
HM6147H
HM6147
6147H
|
A 5170
Abstract: HA7-5170-5 HA7-5170-2
Text: HARRIS SEMICON» SECTOR m blE D • 4302E71 DDMb7ES 1^0 « H A S HA-5170 HARRIS S E M I C O N D U C T O R Precision JFET Input Operational Amplifier March 1993 Features • • • • > • • • • • • • Description Low Offset Voltage .100jiV
|
OCR Scan
|
PDF
|
G0Mb725
HA-5170
100jiV
600kV/V
HA2-5170-2
HA2-5170-5
H302271
DDl4b732
A 5170
HA7-5170-5
HA7-5170-2
|
od43l
Abstract: OLD222 OCS32 LED 850nm TO-18 ocm220
Text: Tstg : -5 5 ~ +125°C Metal can Topr :-4 0 - +125°C (Metal can) 1FM'’ (tw =100jis) 1FH'Z (tw -2 0 0 ms) 1fm':! (tw -150ns) -3 0 ~+100°C (Others) -3 0 ~ +100°C (Others) (T-10m s) Absolute Maximum Ratings (Tas25°C) R a d ia tio n Color Package P Vr IF
|
OCR Scan
|
PDF
|
100jis)
-150ns)
Tas25
T-10m
T-40m
T-50m
od43l
OLD222
OCS32
LED 850nm TO-18
ocm220
|
Untitled
Abstract: No abstract text available
Text: /T T *JW, S C S -T H O M S O N Hn»[llLll gra E!IO®i M27C4001 4 Megabit (512Kx 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V
|
OCR Scan
|
PDF
|
M27C4001
512Kx
100jiA
48sec.
M27C4001
TSOP32
D7flfl72
|
Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y Si j a n u a r y i 996 SEMI CO NDUC TOR S DS4275-2.1 TF707.L FAST SWITCHING THYRISTOR KEY PARAMETERS V DRM 2500V 600A ^T RMS 9000A ^TSM 300V/11S dV/dt dl/dt 500A/|1S 100jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■
|
OCR Scan
|
PDF
|
DS4275-2
TF707.
00V/11S
100jis
TF707
|
Untitled
Abstract: No abstract text available
Text: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%
|
OCR Scan
|
PDF
|
MX28F2000P
100jiA
16-KB
100mA
MX28F2000PTC-90C4
MX28F2000PTC-12C4
MX28F2000PRC-90C4
MX28F2000PRC-12C4
MX28F2000PPC-90C4
150ns
|
82HS641
Abstract: 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 64K-bit TTL bipolar PROM 8192 x 8 82HS641A/B FEATURES • Random logic • Address access time: 82HS641A = 55ns max 82HS641B = 45ns max • Code conversion • Input loading: -100jiA max
|
OCR Scan
|
PDF
|
64K-bit
82HS641A/B
82HS641A
82HS641B
-100jiA
82HS641
500ns
7110aEb
82HS641B/BJA
82HS641B
GDFP2-F28
82HS641A
256 x 4 TTL PROM Memory with 3-state outputs
|
AF5A
Abstract: No abstract text available
Text: M X23 C 40 0 0 4 M«rT[S1 8 K x 8 C M O S M A S K R O M FEATURES • • • • • • Operating current: 40m A • Standby current: 100jiA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 512K x 8 organization Single +5V power supply Fast access time: 100/120/150/200ns max)
|
OCR Scan
|
PDF
|
100/120/150/200ns
100jiA
100/120/150/200n
i000QC-12
MX23C4000T
MX23C4000PC-15
MX23C4000MC-15
MX23C4000QC-15
MX23C4000TC-15
32Pln
AF5A
|
R112
Abstract: R117
Text: QP Series Lug/Snap-in Terminal T y p e J § A /^ ilik , W ithstanding Vibration(jiBji^J!) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. S A M X O l^ 100jiF 450v L I samxon 100nF 45ov Ü f' I h S SPECIFICATIONS
|
OCR Scan
|
PDF
|
100nF
120Hz,
35x40
30x35
35x30
35x35
25x50
R112
R117
|
Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N OME[LëOT qM K M27C1001 CMOS 1 Megabit (128K x 8 UV EPROM and OTP ROM - VERY FAST ACC ESS TIME: 80ns • CO M PATIBLE W ITH HIGH SPEED M IC R O PROCESSORS, ZERO W AIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active C urrent 30mA - Standby Current 100jiA
|
OCR Scan
|
PDF
|
M27C1001
100jiA
12sec.
M27C1001
FDIP32W
PDIP32
PLCC32
LCCC32W
|
