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    Abstract: No abstract text available
    Text: 100J1ZS40 TOSHIBA 100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage


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    PDF MG100J1ZS40 2-94D2A 100J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: 100J1ZS40 TOSHIBA TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT 1 0 0 J 1 Z S 40 M G Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.)


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    PDF MG100J1ZS40 2-94D2A 100J1ZS40