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    100GB06 Search Results

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    SEMIKRON SK100GB066T

    Igbt Module; Continuous Collector Current:151A; Collector Emitter Saturation Voltage:600V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:800Mv; Product Range:- Rohs Compliant: Yes |Semikron SK100GB066T
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    Newark SK100GB066T Bulk 10
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    SEMIKRON SKM 100 GB 063D

    Igbt Module, 600V, 130A, Semitrans 2; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SKM 100 GB 063D
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    Newark SKM 100 GB 063D Bulk 8
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    SEMIKRON SK 100 GB 066 T 24914990

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
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    TME SK 100 GB 066 T 24914990 1
    • 1 $154.15
    • 10 $129.35
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    SEMIKRON SKM100GB063D

    POWER IGBT TRANSISTOR
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    Richardson RFPD SKM100GB063D 1
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    100GB06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN


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    PDF 100GB063D

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    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


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    PDF 100GB063D

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    Abstract: No abstract text available
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


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    PDF 100GB063D

    skm100gb063d

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


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    PDF 100GB063D skm100gb063d

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


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    PDF 100GB063D

    Diode semikron 3/17

    Abstract: Diode semikron 1/17
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


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    PDF 100GB063D Diode semikron 3/17 Diode semikron 1/17

    Untitled

    Abstract: No abstract text available
    Text: SKM 100GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )=> (' ,@  ( SEMITRANSTM 2 Superfast NPT-IGBT Module SKM 100GB063D Features                               


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    PDF 100GB063D

    skm100gb063d

    Abstract: No abstract text available
    Text: SKM 100GB063D  6 07 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 6 07 8) ) 9 6 .7/ 8) )>? ;// ( .</ -  6 =/ 8) .// - 0// - A 0/ ( ./ E  6 07 8) .// -  6 F/ 8) =7 - 0// - =0/ - 0// -  G/ &&& H .7/ 8)


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    PDF 100GB063D skm100gb063d

    din 7985

    Abstract: SKM100GB063D SK 200 GAR 125 schaltung Mosfet wacker SKM181A3 if2t SKM151 SKM181
    Text: 5. SEMITRANS M Leistungs-MOSFET Module Besondere Merkmale Typische Anwendungen Leistungs-MOSFET Module • N-Kanal-Anreicherungstyp • Schaltnetzteile • Kurze innere Verbindungen verhindern • Selbstgeführte Wechselrichter • Gleichstrom-Servo- und Roboter-Antriebe


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    100GB06

    Abstract: M100GB SKM 100 GB 063 D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 130 / 100


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    skm 200 gb 122 d

    Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


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    IEC 974-1

    Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


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    SKM 400GB062D

    Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
    Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,


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    PDF 300GD063D 125GD127D 85GD127D 350GD063DM 250GD128D 350GD128DM 400GD063D 400GD128D 500GD128DM SKM 400GB062D 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31

    100GB06

    Abstract: No abstract text available
    Text: s e M IK R O N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges T oase = 25/70 °C Ptot per IG B T , T oase = 25 °C Units 600 600 1 3 0 /1 0 0 260 / 200 ±20 450 - 4 0 . +150 125) 2500 Class F 40/125/56 Rge = 20 Tease = 25/70 °C; tp = 1 ms


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