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    WG713

    Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf


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    PDF 000232b DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 1N4449* WG713 1n4148 ITT ITT3002 1N914 ITT BAV20

    CECC 50001

    Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
    Text: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera­• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C


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    PDF DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 100Qto BAV20 CECC 50001 BAV21 CECC WG713 1N45BA 1N483A Diode