Untitled
Abstract: No abstract text available
Text: INSTALLATION INSTRUCTIONS FORM INST11106M Rev B 08/14 COMP PUMP SERIES 110FI IN-LINE ELECTRIC FUEL PUMP PART NO. 11106M Parts included in this kit: 1 - Comp Pump 100FI Series electric in-line fuel pump 2 - Mounting brackets PERFORMANCE SPECIFICATIONS Please read these instructions completely before
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INST11106M
110FI
11106M
100FI
30amp
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Untitled
Abstract: No abstract text available
Text: S P E C IFIC A TIO N S For complete specifications see www.samtec.com?HSC8 Conductor: 'h oz Copper Contact Area: Hard Gold Plated Insulator: FR-4 Impedance Mismatch: -S E : 50Q ± 10% -D P : 100fi ± 10% Frequency Rating: -S E : 2.5 GHz -D P : 3.5 GHz Near End Crosstalk:
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100fi
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YHP4261A
Abstract: SU10V 4261A SU16V-04300 ac tvs hf tv
Text: 7 S ^ ' - “7 6 ' ‘rf * 7 S 2 _ - 8 '2 - S j - ~ ~ rt> EMC U N E FILTERS SSUU Coils = M l/ H Classification • Features t 5<7 ' K 35f ê t i ü m n t i '5 S U 1 6 V —0 4 3 0 0 j I— *- Inductance j 100fiH; ex. 300 stands for 30mH) - Rated current (A)
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SU16V-04300
100mA;
400mA
SU10V/H-07040
SU10V/H-10030
SU10V/H-t0020,
SU10V/H-10010
SU10V/H-13010
SU10V/H-15010
SU10V/H-20006
YHP4261A
SU10V
4261A
SU16V-04300
ac tvs hf tv
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Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N otes A V A I L A B L E AN62 • AN64 • AN66 • AN74 « X68C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES • High Performance CMOS — Fast Access Time, 120ns — Low Power • 60mA Active • 100fiA Standby • PDIP, PLCC, and TQFP Packaging Available
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X68C75
120ns
100fiA
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at28c64a
Abstract: No abstract text available
Text: I////CRTRLY5 T mm II I S E M l C a N D U C T O R CAT28C64A/CAT28C64AI 64K-Bit CMOS E2PROM FEATURES • Fast R ead A ccess T im es: 150/200/250ns ■ C M O S and T T L C o m p atib le I/O ■ Low P o w e r C M O S Dissipation: -A c tiv e : 30m A M ax. -S ta n d b y : 100fiA Max.
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CAT28C64A/CAT28C64AI
64K-Bit
150/200/250ns
100fiA
AT28C
at28c64a
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Untitled
Abstract: No abstract text available
Text: ¿57 STH6N100 100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STH6N100
STH6N100FI
100FI
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TS555
Abstract: ne555 mos
Text: r z j SGS-THOMSON TS555C/I/M LOW POWER SINGLE CMOS TIMERS • VERY LOW POWER CONSUMPTION : ■ 100fiA typ at Vcc = 5V ■ HIGH MAXIMUM ASTABLE FREQUENCY 2.7MHz ■ PIN-TO-PIN AND FUNCTIONALLY COMPATIBLE WITH BIPOLAR NE555 ■ VOLTAGE RANGE : +2V to +18V ■ HIGH OUTPUT CURRENT CAPABILITY
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TS555C/I/M
100fiA
NE555
TS555C
TS555I
TS555M
TS555-01
TS555CD
TS555IN
TS555
ne555 mos
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309Q
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 1 1 / 0 6 / 0 0 MP REVISION A ADDED TYP TO A.3. 1 1 / 3 0 / 0 0 MP ADSL tra n s fo rm e r designed fo r use with C en tillium IC chip CT—L50S C 04 CO Side A. Electrical S pecifications (@ 2 5 °C) 1. P rim a ry (Line side) Im pedance; 100fi
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L50SC04
100fi
30KHz
100KHz,
20KHz
E208555
10KHz,
P-A1-12473
acad\ttc\a1124731
309Q
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Return Loss: 50 to 10MHz -20/-15dB Min 100fi/98±13Q Commmon Mode Rejection XMIT: 5-10MHz -50dB Min 50MHz -35dB Min 100MHz -25dB Min 200MHz -15dB Min Crosstalk: 5-10MHz -50dB Min All Turns Ratios: TX1:2,RX1:1 m il Transtek M agnetics
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10MHz
-20/-15dB
100Q/98Â
5-10MHz
-50dB
50MHz
-35dB
100MHz
-25dB
200MHz-15dB
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C5646
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDS —C 5 6 4 6 R I/N P R lf=10mA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN TYP PEAK WAVELENGTH MAX 660 RED FORWARD VOLTAGE 2.3 Vf Vr lr =100fiA 17,500 |jcd I f = 10mA 5.D AXIAL INTENSITY fiOOD EMITTED COLOR:
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LDS-C5646RI/NPR
100fjA
C5646
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 5 S T P 3 N 1 oo S T P 3 N 1 OOFI iL iO M iQ £ I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100 S TP 3N 100FI • ■ . ■ ■ . V dss R DS(on) Id 1000 V 1000 V < 5Q < 5 £2 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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100FI
STP3N100
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TP4n100
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE S TP 4N 100 S TP 4N 100FI • . . ■ ■ . ■ S T P 4 N 1 oo S T P 4 N 1 OOFI iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id 1000 V 1000 V < 3.5 a < 3.5 a 4 A 2.2 A TYPICAL Ros(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY
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100FI
STP4N100
TP4n100
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Untitled
Abstract: No abstract text available
Text: Dual Ultralow Vos Matched Operational Amplifier 0P-207 ANALOG ► DEVICES FEATURES • • • • • • • • Low Vq s .100fiV Max Offset Voltage M a tc h . 90/uV Max
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100fiV
90/uV
103dBMin
126dB
0P-207
OP-207
20kft
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a7532
Abstract: No abstract text available
Text: ¿ = 7 *7 Æ > S G S -1 H 0 M S 0 N M W iU Iê M M X Ê i M 27V 10 1 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100fiA
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100fiA
12sec.
M27V101
M27C1001
a7532
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HM6116ALSP-12
Abstract: No abstract text available
Text: HM6110A Series Maintenance Only 2 0 4 8 -word x 8-bit High Speed Static CMOS RAM • FURTURES • High speed: Fast Access Time • Low Power Standby and Low Power Operation 120ns/150ns/200ns max. Standby: HM 6116AP Series 100fiW (typ.) 5fxW (typ.) (L-version)
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HM6110A
120ns/150ns/200ns
6116AP
100fiW
HM6116ALSP-12
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LTV4N35
Abstract: 357 Photocoupler LTV4N37 E113898 LTV4N35-V LTV-4N35 T-41-83 A1934 AQ01B
Text: I {LITE-ON INC 5 5 3 b 3 b7 D D G l b 73 □ 3 1 E I> LIT! Mi r r i General Purpose Type Photocoupler I ^ 4N 35/ L T ^ ^ • FEATURES 1:; High Gurrent tran sfer ratio CTftMIN. 100% at Ip = 10mA, V q e = 10V 2. Response time 3/«s at VCG=10V, lc =2mA, RL=100fi
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553b3b7
000Ib73
LTV4N35/LTY4N37
100fi
LTV4N35
550Vrms)
LTV4N37
500Vrms)
E113898
d0-41and
LTV4N35
357 Photocoupler
LTV4N37
E113898
LTV4N35-V
LTV-4N35
T-41-83
A1934
AQ01B
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2SA539
Abstract: AD100
Text: Transistors 2SA539 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Sym bol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage B V cbo lc = -100fiA, Ie = 0 -6 0 V Collector-Emitter Breakdown Voltage B V ceo lc = -10mA, |B=0
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2SA539
400mW
2SA539
AD100
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Untitled
Abstract: No abstract text available
Text: mil ELECTRICAL CHARACTERISTICS: Return Loss: 50 to 10MHz -20/-15dB Min 100fi/98±13Q Commmon Mode Rejection XMIT: 5-10MHz -40dB Min 50MHz -30dB Min 100MHz -15dB Min 200MHz-lOdB Min Crosstalk: 5-10MHz -50dB Min Transtek M agnetics M a g n e t ic s p io d u c t s fo i a c h a n g in g w o ild .,v
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10MHz
-20/-15dB
100Q/98Â
5-10MHz
-40dB
50MHz
-30dB
100MHz
-15dB
200MHz-lOdB
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Untitled
Abstract: No abstract text available
Text: SPECIAL PURPOSE, HIGH VOLTAGE D A L E , METAL OXIDE RESISTORS MODEL FHV, f l a t FEATURES: • Low T.C.: ± 2 0 0 PPM /°C standard, ±1 00 PPM /°C available • Tolerances: 1%, 2 % , 5% , 10% • Non-Inductive D esign • Values: 100fi to 100 gigohm s • Matched Se ts Available
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100fi
FHV-025
FHV-050
FHV-050M
FHV-075
100M5
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON s t h 6 n 1 oo S T H 6 N 1 0 0 FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 6N 100 STH6N 100FI . . . • ■ . ■ V dss R DS on Id 1000 V 1000 V < 2 a < 2 a 6 A 3.7 A TYPICAL RDs(on) = 1.75 £2 AVALANCHE RUGGED TECHNOLOGY
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100FI
STH6N100
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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Untitled
Abstract: No abstract text available
Text: SN55ALS192, SN75ALS192 QUADRUPLE DIFFERENTIAL LINE DRIVERS SLLS007C - JULY 1985 - REVISED MAY 1995 Meets or Exceeds the Requirements of ANSI Standard EIA/TIA-422-B and ITU Recommendation V.11 SN55ALS192. . . J OR W PACKAGE SN75ALS19 2 . D OR N PACKAGE TOP VIEW
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SN55ALS192,
SN75ALS192
SLLS007C
EIA/TIA-422-B
AM26LS31
SN55ALS192.
SN75ALS19
SN55ALS192
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S6370
Abstract: No abstract text available
Text: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1
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S6370
S6370
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TSS2G41
Abstract: TSS2D41S
Text: 9097250 TOSHIBA 39C <D I S C R E T E / O P T O > SSR ZERO-CROSS TYPE 02374 v D T 3 5 ^ / 3 TOSHIBA {DISCR E TE /O PTO } TSS2J41 " 600V 2A Unit in as MAXIMUM RATINGS ' CHARACTERISTIC TSS2D41S Repetitive Peat TSS2G41S Off-state Voltage TSS2H41S T S S 2J41S
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TSS2J41
TSS2D41S
TSS2G41S
TSS2H41S
2J41S
TSS2G41
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