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    100B20 Price and Stock

    Cal-Chip Electronics GMC31CG100B200NT

    CAP CER 10PF 200V C0G/NP0 1206
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    DigiKey GMC31CG100B200NT Reel 76,000 4,000
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    Cal-Chip Electronics GMC10CG100B200NT

    CAP CER 10PF 200V C0G/NP0 0603
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    DigiKey GMC10CG100B200NT Reel 56,000 4,000
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    GMC10CG100B200NT Reel 4,000 4,000
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    ams OSRAM Group LZ1-00B202-0000

    LED LZ1 BLUE 457NM SMD
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    DigiKey LZ1-00B202-0000 Reel 7,000 500
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    LZ1-00B202-0000 Cut Tape 129 1
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    EBV Elektronik LZ1-00B202-0000 13 Weeks 500
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    Kyocera AVX Components 100B200JT500XT1K

    CAP CER 20PF 500V P90 1111
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    DigiKey 100B200JT500XT1K Cut Tape 5,568 1
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    100B200JT500XT1K Reel 4,000 1,000
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    Kyocera AVX Components 100B201JW300XT1K

    CAP CER 200PF 300V P90 1111
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    DigiKey 100B201JW300XT1K Reel 3,000 500
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    100B201JW300XT1K Cut Tape 627 1
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    100B20 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B20 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    100B-2002 iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002 Pulse Electronics MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002F iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002FNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF
    100B-2002FNLT iNRCORE MDL DUAL 100D 1:1 SMT TR RPB Original PDF
    100B-2002FT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002FX iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002FXNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF
    100B-2002FXNLT iNRCORE MDL DUAL 100D 1:1 SMT TR RPB Original PDF
    100B-2002FXT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NL iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NL Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NLT iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002NLT Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002T iNRCORE MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002T Pulse Electronics MDL DUAL 100D 1:1 SMT TR PBC Original PDF
    100B-2002X iNRCORE MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002X Pulse Electronics MDL DUAL 100D 1:1 SMT TU PBC Original PDF
    100B-2002XNL iNRCORE MDL DUAL 100D 1:1 SMT TU RPB Original PDF

    100B20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 100B20F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage2.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)4.0m V(FM) Max.(V) Forward Voltage6.0


    Original     		PDF 100B20F Current100m Time300n Current20u StyleAxial-97

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    Untitled

    Abstract: No abstract text available
    Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military/Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350 H OCL with 8mA bias Operating and storage temperature: 100B-2002F: -40°C to +85°C 100B-2002FX: -55°C to +125°C Encapsulated package withstands


    Original     		PDF 10/100BASE-TX 100B-2002F: 100B-2002FX: 1-100MHz 2-30MHz 100B-2002F 100B-2002FX 40MHz 50MHz 1-60MHz

    Untitled

    Abstract: No abstract text available
    Text: 10/100BASE-TX DUAL-PORT TRANSFORMER MODULES Military / Aerospace Grade Compliant with IEEE 802.3u and ANSI X3.263 standards 350µH OCL with 8mA bias Operating and storage temperature: 100B-2002: -40°C to +85°C 100B-2002X: -55°C to +125°C IC grade transfer-molded package withstands


    Original     		PDF 10/100BASE-TX 100B-2002: 100B-2002X: 100B-2002 100B-2002X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S

    j340 motorola make

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125R3 MRF21125SR3

    arion

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21090R3 MRF21090SR3 MRF21090SR3 arion

    Untitled

    Abstract: No abstract text available
    Text: FREQUENCY CONTROL PRODUCTS HIGH FREQUENCY SURFACE MOUNT VCXO DFV S8-MLECPI 3.3 V 19.8±0.3 KEY FEATURES 15.24 12.8±0.2 622 to 800 MHz Parametric frequency multiplication 1.27 1.65 0.4 ps RMS jitter over 50 kHz to 80 MHz B.W. 2.54 18.4 OC-192/Sonet/SDH H = 9.30 mm


    Original     		PDF OC-192/Sonet/SDH 100B20 100B25 100B50 100E30 100B20

    672047

    Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16
    Text: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a first class European supplier of low-voltage products including wiring devices, residential and


    Original     		PDF EP100 EP250 R/2386/E/E 672047 b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16

    GX03005522

    Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282

    ATC 100C

    Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series

    ferroxcube ferrite beads

    Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414

    MRF284

    Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH

    spw 049 transformer

    Abstract: spw -049 transformer spw 068
    Text: WHEN PERFORMANCE MATTERS DC Power Supplies The First Name in Power Solutions The People at Acme Make it Happen When you need big power in a small space – turn to the first name in power solutions. Acme Electric did not become a leader in power quality by accident. Acme earned its reputation


    Original     		PDF PS01-5M1008 spw 049 transformer spw -049 transformer spw 068

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
    Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    j340 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21090 MRF21090S j340 motorola

    Untitled

    Abstract: No abstract text available
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS


    OCR Scan     		PDF SD2900 SD2900 1021498C 1010936C

    k 1225 data

    Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S
    Text: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110


    OCR Scan     		PDF MRF21125/D 465C-01 MRF21125S) MRF21125 MRF21125S k 1225 data mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125S