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    100A4R7CW150X Search Results

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    100A4R7CW150X Price and Stock

    Kyocera AVX Components 100A4R7CW150XT

    Silicon RF Capacitors / Thin Film 150volts 4.7pF
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    Mouser Electronics 100A4R7CW150XT 1,318
    • 1 $2.91
    • 10 $2.24
    • 100 $1.71
    • 1000 $1.19
    • 10000 $1.1
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    TTI 100A4R7CW150XT Reel 500
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    • 10000 $0.77
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    Richardson RFPD 100A4R7CW150XT 500
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    • 1000 $0.92
    • 10000 $0.57
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    Kyocera AVX Components 100A4R7CW150XC100

    Silicon RF Capacitors / Thin Film 150V 4.7pF Tol 0.25pF Las Mkg
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    Mouser Electronics 100A4R7CW150XC100
    • 1 $3.37
    • 10 $2.59
    • 100 $1.97
    • 1000 $1.38
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    Richardson RFPD 100A4R7CW150XC100 300 300
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    • 1000 $0.92
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    Kyocera AVX Components 100A4R7CW150XTV

    Silicon RF Capacitors / Thin Film 150V 4.7pF Tol 0.25pF Las Mkg Vertical
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    Mouser Electronics 100A4R7CW150XTV
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    Kyocera AVX Components 100A4R7CW150XT1K

    Silicon RF Capacitors / Thin Film 150V 4.7pF Tol .25pF Las Mkg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100A4R7CW150XT1K
    • 1 -
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    • 1000 $0.963
    • 10000 $0.909
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    Richardson RFPD 100A4R7CW150XT1K 1,000
    • 1 -
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    • 100 -
    • 1000 $0.92
    • 10000 $0.57
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    Kyocera AVX Components 100A4R7CW150XTV1K

    Silicon RF Capacitors / Thin Film 150V 4.7pF Tol .25pF Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100A4R7CW150XTV1K
    • 1 -
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    • 1000 $0.963
    • 10000 $0.909
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    100A4R7CW150X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original
    PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original
    PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original
    PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original
    PDF PTFA220041M PTFA220041M PG-SON-10