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    100A 1000V IGBT Search Results

    100A 1000V IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100A 1000V IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CM100DY-34A

    Abstract: MITSUBISHI IGBT 100A IGBT 1000V .100A igbt 1000v 100a 100A 1000V IGBT diode 100a 1000v
    Text: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM100DY-34A CM100DY-34A MITSUBISHI IGBT 100A IGBT 1000V .100A igbt 1000v 100a 100A 1000V IGBT diode 100a 1000v

    Untitled

    Abstract: No abstract text available
    Text: CM100DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules


    Original     		PDF CM100DY-34A Amperes/1700

    CM100DY-34A

    Abstract: igbt 1000v 100a
    Text: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		PDF CM100DY-34A 13K/W CM100DY-34A igbt 1000v 100a

    CM100DY-34A

    Abstract: No abstract text available
    Text: CM100DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules


    Original     		PDF CM100DY-34A Amperes/1700 CM100DY-34A

    CM100DY-34A

    Abstract: No abstract text available
    Text: CM100DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules


    Original     		PDF CM100DY-34A Amperes/1700 CM100DY-34A

    Untitled

    Abstract: No abstract text available
    Text: CM100DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules


    Original     		PDF CM100DY-34A Amperes/1700

    CM100DY-34A

    Abstract: No abstract text available
    Text: CM100DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K P P Q Description: Powerex IGBTMOD™ Modules


    Original     		PDF CM100DY-34A Amperes/1700 CM100DY-34A

    Untitled

    Abstract: No abstract text available
    Text: CM100DU-34KA Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 100 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1


    Original     		PDF CM100DU-34KA Amperes/1700

    CM100DU-34KA

    Abstract: IGBT 1000V .200A
    Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM100DU-34KA CM100DU-34KA IGBT 1000V .200A

    CM100DU-34KA

    Abstract: IGBT 1000V .200A
    Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack


    Original     		PDF CM100DU-34KA CM100DU-34KA IGBT 1000V .200A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM100DU-34KA ● IC . 100A ● VCES . 1700V


    Original     		PDF CM100DU-34KA

    CM100DU-34KA

    Abstract: No abstract text available
    Text: CM100DU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 100 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K P Q G N


    Original     		PDF CM100DU-34KA Amperes/1700 CM100DU-34KA

    cm100du-34k

    Abstract: 40A04
    Text: CM100DU-34K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD K-Series Module 100 Amperes/1700 Volts TC Measured Point A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q Q K K H U C1 P


    Original     		PDF CM100DU-34K Amperes/1700 cm100du-34k 40A04

    Untitled

    Abstract: No abstract text available
    Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,


    Original     		PDF FGH40T100SMD 25oductor FGH40T100SMD

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater

    RHR15100

    Abstract: RHRP15100
    Text: RHRP15100 Data Sheet January 2000 File Number 3692.2 15A, 1000V Hyperfast Diode Features The RHRP15100 is a hyperfast diode with soft recovery characteristics trr < 60ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated


    Original     		PDF RHRP15100 RHRP15100 RHR15100

    RHRG30100

    Abstract: No abstract text available
    Text: RHRG30100 Data Sheet January 2000 File Number 3941.2 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated


    Original     		PDF RHRG30100 RHRG30100

    diode mur

    Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
    Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.


    OCR Scan     		PDF GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A

    diode 6A 1000v

    Abstract: diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080
    Text: _ MCT/IGBT/DIODES 7 HYPERFAST SINGLE DIODES PAGE SELECTION G U ID E . 7-3 HYPERFAST SINGLE DIODE DATA SHEETS


    OCR Scan     		PDF RHRD440. RHRD450, RHRD460, RHRD440S, RHRD450S, RHRD460S RHRD4120, RHRD4120S RHRD640, RHRD650, diode 6A 1000v diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080

    igbt 1000v 80a

    Abstract: 30A, 600v DIODE
    Text: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,


    OCR Scan     		PDF MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 MUR840, MUR850, MUR860, RURP840, igbt 1000v 80a 30A, 600v DIODE

    mosfet 600V 100A

    Abstract: 100A 1000V mosfet C547 b c548 IRGTIN100M12
    Text: jl j Preliminary Data Sheet PD-1169 SÔR Rectifier IRGTIN100M12 “H A LF-B RIDG E" IG B T INT-A-PAK Low conduction loss IG B T .Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated Description IR's advanced IGBT technology is the key


    OCR Scan     		PDF PD-1169 IRGTIN100M12 Outline11 55M52 C-548 mosfet 600V 100A 100A 1000V mosfet C547 b c548 IRGTIN100M12

    C528 DIODE

    Abstract: 100A 1000V mosfet C528 transistors igbt 600V 100A short circuit mosfet 600V 100A mosfet 100a 600v DIODE 100A irgnin100m12 100A 1000V IGBT C528 ic
    Text: Provisional Data Sheet PD-9.1165 bitemational râHRectifier IRGNIN100M12 "CHOPPER HIGH SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT High Side Switch — = 3 VCE= 1200V lc = 1 0 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGNIN100M12 5S452 DG2G31fl C528 DIODE 100A 1000V mosfet C528 transistors igbt 600V 100A short circuit mosfet 600V 100A mosfet 100a 600v DIODE 100A irgnin100m12 100A 1000V IGBT C528 ic

    c548 st

    Abstract: No abstract text available
    Text: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V


    OCR Scan     		PDF IRGTIN100M12 Outline11 C-548 c548 st