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    2SC2879

    Abstract: 2sc2879 transistor
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency


    Original     		PDF 2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 transistor

    2SC2879A

    Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879A 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879

    2SC2879

    Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879 toshiba 2sc2879 2SC2879A 2sc2879 equivalent

    toshiba 2sc2879

    Abstract: 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		PDF 2SC2879A 30MHz 28MHz 100WPEP -24dB 13Besented toshiba 2sc2879 2sc2879 equivalent

    2SC2879

    Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency


    Original     		PDF 2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector

    arco 465

    Abstract: arco 469 SD1487 100WPEP arco 463
    Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1487 SD1487 arco 465 arco 469 100WPEP arco 463

    arco 469

    Abstract: arco 465 100WPEP SD1487 arco 463
    Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1487 SD1487 arco 469 arco 465 100WPEP arco 463

    SD1487

    Abstract: No abstract text available
    Text: Jzi±£.u i, L/ nc. 20 STERN. AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 30 MHz 12.5 VOLTS IMD-30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN


    Original     		PDF SD1487 IMD-30 5004LFL SO1487 SD1487 100mA 30MHz 150mA

    SD1487

    Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
    Text: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon


    Original     		PDF SD1487 SD1487 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465

    100WPEP

    Abstract: 2SC2879 2sc2879 equivalent
    Text: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB


    OCR Scan     		PDF 2SC2879 -30MHz 28MHz 100WpEP 150pF 022AF 47/iF 044/uF 100WPEP 2SC2879 2sc2879 equivalent

    toshiba 2sc2879

    Abstract: 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor
    Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Power Gain Po = lOOWpEP Gp = 13dB 7 c = 35%(Min.) Collector Efficiency


    OCR Scan     		PDF 2SC2879 30MHz 28MHz 100mA 961001EAA2' toshiba 2sc2879 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor

    100WPEP

    Abstract: Ferrite core TDK D1S1555
    Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p


    OCR Scan     		PDF 2SC2879 2-30MHZ 28MHz 100Wp --24dB 1S1555 961001E 100WPEP Ferrite core TDK D1S1555

    SD1487

    Abstract: No abstract text available
    Text: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO


    OCR Scan     		PDF SD1487 SD1487 D070541

    Untitled

    Abstract: No abstract text available
    Text: fZ ^ 7 7 S G S -T H O M S O N SD1487 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz . 12.5 VO LTS ■ IMD -3 0 dB . C O M M O N EMITTER ■ G O LD M ETALLIZATION . P qut — 100 W MIN. WITH 12.0 dB GAIN PIN C O N N E C TIO N


    OCR Scan     		PDF SD1487 SD1487

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f 9R7Q Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB Collector Efficiency


    OCR Scan     		PDF 2SC2879 30MHz 28MHz 2-13B1A 100mA, 1S1555 150pF 150pF 022//F