Untitled
Abstract: No abstract text available
Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: 7/10/02 7/10/02 Alert Category: Discrete Semiconductor DCS/PCN-1006 Alert Type: PCN #: Obsolescence Notice - Not recommended for design PCN #:2002-1006 TITLE 2N4124 Status Inactive IMPACT
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DCS/PCN-1006
2N4124
2N4124
QP502-1
QP502-1
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BYW98-100
Abstract: stth302c STMicroelectronics marking code date diode 400v 2A ultrafast 1a 200v diode BYW98-150 BYW100-150 1006B BYT01-400
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/AD/1006B PCN DSG/AD/1006 UPDATE Important note: this document replaces PCN DSG/AD/1006 document sent in August 2001 and supersedes any preceding communication and sampling information related to the announced
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DSG/AD/1006B
DSG/AD/1006
DO-15
DO-201AD
DSG/AD/1006B
BYW98-100
stth302c
STMicroelectronics marking code date
diode 400v 2A ultrafast
1a 200v diode
BYW98-150
BYW100-150
1006B
BYT01-400
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UFF10005
Abstract: ITO-220AC UFF 100 02 UFF 50 02 uff100-2 UFF100 UFF-100 UFF1002 F1006 F10005
Text: THUR UFF10005 UFF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS ITO-220AC 0.190 4.75 0.145(3.55) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications
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UFF10005
ITO-220AC
-55to
F10005
F1006
0V-200V
00V-400V
450us
50mVp-p
UFF10005
ITO-220AC
UFF 100 02
UFF 50 02
uff100-2
UFF100
UFF-100
UFF1002
F1006
F10005
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Untitled
Abstract: No abstract text available
Text: UF10005 THRU UF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching
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UF10005
-55to
0V-200V
00V-400V
450us
50mVp-p
0V-400V
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UF10005
Abstract: TO-220AC UF10-005
Text: THUR UF10005 UF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching
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UF10005
-55to
0V-200V
00V-400V
450us
50mVp-p
0V-400V
UF10005
TO-220AC
UF10-005
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Untitled
Abstract: No abstract text available
Text: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1006
14dBm
17dBm
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Untitled
Abstract: No abstract text available
Text: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1006
14dBm
17dBm
-20dBm
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Untitled
Abstract: No abstract text available
Text: ACTM-1006 Tunnel Diode Detector Modules Features: • Contains hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. • The video port is protected from static or transient charges. • Input impedance matching. • Models may be chosen for broadband RF
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ACTM-1006
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ACTM-1006N
Abstract: 1006N DATASHEET TUNNEL DIODE M103 M105 M107
Text: ACTM-1006 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 2–6 900 0.4 -51 2.5:1 20 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1006
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
-STD-883,
MIL-STD-883,
ACTM-1006N
1006N
DATASHEET TUNNEL DIODE
M103
M105
M107
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GaAs photodiode Emcore
Abstract: No abstract text available
Text: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 Features Data rates of 2.5 Gb/s per channel EMCORE’s 12 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own
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100x150
PD1x12
GaAs photodiode Emcore
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5.6B ZENER
Abstract: 7.5B DIODE 6.2B diode ZENER DIODE 9.1B 12b zener ZENER DIODE 5.1B 8.2B zener diode Zener diode VMD2 Marking 43B 56B zener
Text: Sub-miniature Composite Zener Diodes Compact Zener Diodes VZ V Type VDZ B series IZ (mA) 4.7~8.2V EDZ B series VMZ 6.8N Circuit Package VMD2 (1006) 5mA EMD2 (1408) VMD3 6.47~7.14V EMZ 6.8N EMZ 5.1M 4.98~5.20V EMZ 5.6N 5.31~5.92V EMZ 6.8E 6.47~7.14V EMD3
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VMD2
Abstract: RN242CS VMN2
Text: Low Capacitance / Low Forward Resistance PIN Diodes Sub-miniature Excellent high-frequency charac ristics Surface mount package VMN2 1006 IF-Rf f=900MHz 3.5 RN141G/S RN152G 3 RN142G/S RN242CS Rf (Ω) 2.5 VMN2 VMD2 2 n External Dimensions 1.5 1 0.5 2 4 6
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900MHz
RN141G/S
RN152G
RN142G/S
RN242CS
VMD2
RN242CS
VMN2
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Untitled
Abstract: No abstract text available
Text: ACTM-1006 TUNNEL DIODE DETECTOR MODULES Frequency Range min Sensitivity (min) Flatness vs. Frequency (max) Typical TSS Typical VSWR Nominal Video Capacitance 2–6 900 0.4 -51 2.5:1 20 GHz mV/mW ±dB dBm Ratio pF NOTES: Maximum input power: +14dBm (3dB guardband for +17dBm possible burnout)
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ACTM-1006
14dBm
17dBm
-20dBm
MIL-E-5400,
MIL-STD-202,
MIL-E-16400
MIL-STD-202F,
MIL-STD-883,
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sony led tv service manual
Abstract: sony led tv electronic diagram led tv service manual SERVICE MANUAL tv sony sony factory codes RM0033 schematic diagram tv sony ZLP32300 ir learning tv remote control schematics cable box
Text: Crimzon Crimzon RC Bullet® Reference Design Kit v1.2 User Manual UM021302-1006 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.zilog.com Crimzon RC Bullet® Reference Design Kit v1.2
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UM021302-1006
RM0049
RM0050
sony led tv service manual
sony led tv electronic diagram
led tv service manual
SERVICE MANUAL tv sony
sony factory codes
RM0033
schematic diagram tv sony
ZLP32300
ir learning tv remote control schematics
cable box
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LCC-5
Abstract: silicon carbide SHDC624122 SHDC624122P SHDC626052 SHDC626052P SHDC626112 SHDC626112P SCHOTTKY 4A 600V
Text: Silicon Carbide Schottky Rectifiers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 133-1006 Sensitron Silicon Carbide Schottky
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58614 relay
Abstract: 58614 relay 58614 58614 tyco CII 58614 MS18-1006 solid state relay 10A DC bi-directional switches FET 89116-006 high speed solid state relay
Text: MS18-1006 High Performance Solid State Relay DC & bi-directional solid state relay for loads up to 2A @ 80Vdc Product Facts • Bi-directional power FET output. ■ Optically coupled. ■ Low on-resistance. ■ Extremely low leakage current. ■ Subminiature hermetically
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MS18-1006
80Vdc
MIL-R-28750
MS18-1006
MS18-TBD
58614 relay
58614
relay 58614
58614 tyco
CII 58614
solid state relay 10A DC
bi-directional switches FET
89116-006
high speed solid state relay
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LQH32CN100K53
Abstract: LQH32CN4R7M53 LTC3456 MBRM120E MMBT3906
Text: advertisement Multiple Output DC/DC Converter Runs Off 2-Cell AA Batteries, USB or AC Wall Adapter – Design Note 1006 Gurjit Ghandi and Minjong Kim The 3.3V and core supplies are generated by switching regulators operating at 1MHz constant frequency. High
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LTC3456
DN1006
LTC3456
100mV/DIV
200mA/DIV
200mV/DIV
dn1006f
LQH32CN100K53
LQH32CN4R7M53
MBRM120E
MMBT3906
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pia 6820
Abstract: No abstract text available
Text: D A C 1006/D A C 1007/D A C 1008 \iP C om patible, D ouble-B uffered D to A C onverters General Description The D A C 1006/7/8 are advanced C M O S /S i-C r 10-, 9- and 8-bit accurate m ultiplying DACs w hich are d esigned to inter lace directly w ith the 8080, 8048, 8085, Z-80 and other
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DAC1006/DAC1007/DAC1008
1006/D
1007/D
pia 6820
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Untitled
Abstract: No abstract text available
Text: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3
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2SD2423
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IN 1004 diodes
Abstract: boonton 230A HP 5082-1003 diode 5082-1001 5082-1001 HP STEP RECOVERY DIODES 1006 diode 1N4456 diode 5082-1002 hp 5082 step recovery
Text: HIGH CONDUCTANCE DIODES H E W L E T T PACKARD COMPONENTS Features 5082-1001 IN 4456 5082-1002 5082-1003 5082-1004 5082-1006 . . ► — FAST SWITCHING LOW CAPACITANCE HIGH CURRENT CAPABILITY D 2 5 .4 (1 .0 0 ) A MIN. Description/Applications
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MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC1005
MOC1006
VQE 24 led
VDE0113
VDE0160
VDE0832
VDE0833
transistor J5X
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1N4456
Abstract: No abstract text available
Text: H E W LE TT K 7 J I PACKARD High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 1N4456 Features • F ast Switching • Low Capacitance • High Current Capability Description/ Applications The 5082-1000 series of diodes feature planar silicon epitaxial
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1N4456)
MIL-STD-750,
1N4456
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MAX328CWE
Abstract: No abstract text available
Text: 19-1006:Rev1;10/94 y i / i y i x i v v i Ultra-Low Leakage Monolithic CMOS Analog Multiplexers _ Features ♦ ♦ ♦ ♦ Designed to provide the lowest possible "on" and "off" leakages, these multiplexers switch signals from high
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MAX328/MAX329
MAX328/MAX329
MAX328
MAX329
DG508/DG509
5fl7bb51
MAX328CWE
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PDF
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hp 5082 step recovery
Abstract: HP STEP RECOVERY DIODES MIL-STD-750 METHOD 2036 608C 1N4456 5082-1001 5082-1006 5082-1002 FSJ 1002 HP 5082-1006
Text: HEW LETT-PACKARD/ CflPNTS blE D • 44475Ô4 □ □ 0 tì t . 3 B TT3 H i HP A U p \ HEWLETT v PACKARD High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 1N4456 Features • Fast Switching • Low Capacitance • High Current Capability
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1N4456)
hp 5082 step recovery
HP STEP RECOVERY DIODES
MIL-STD-750 METHOD 2036
608C
1N4456
5082-1001
5082-1006
5082-1002
FSJ 1002
HP 5082-1006
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