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    1005G DIODE Search Results

    1005G DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1005G DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1005G diode

    Abstract: No abstract text available
    Text: PR1001G/L-PR1007G/L Vishay Lite-On Power Semiconductor 1.0A Fast Recovery Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard


    OCR Scan     		PR1001G/L-PR1007G/L 1001G 1002G 1003G 1004G 1005G 1006G 1007G D-74025 24-Jun-98 1005G diode PDF

    Untitled

    Abstract: No abstract text available
    Text: HERAF1003G . HERAF1008G 10.0 Amp. Glass Passivated Ultrafast Recovery Rectifier Current 10.0 A Voltage 200 to 1000 V ITO-220AC FEATURES • Ultrafast recovery time for high efficiency • Low power losses • Low forward voltage drop • High forward surge current capability


    Original     		HERAF1003G HERAF1008G ITO-220AC 2002/95/EC 2002/96/EC J-STD-020, ITO-220AC. MIL-STD-750 J-STD-002armless heraf10g PDF