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    Microchip Technology Inc APT1004RBNG

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    1004R2BN

    Abstract: apt1004rbn APT1004R2BN 1004rbn
    Text: D TO-247 G 1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω APT1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT1004RBN APT1004R2BN 1004RBN 1004R2BN O-247AD 1004R2BN apt1004rbn 1004rbn

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD 1004RBN OS 1000V 4.4A 4.00Í1 APT1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT


    OCR Scan     		PDF APT1004RBN APT1004R2BN 1004RBN 1004R2BN APT1004R/1004R2BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV 1004RBN APT904RBN APT1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1004RBN APT904RBN APT1004R2BN APT904R2BN 904RBN 904R2BN 1004R2BN 1004RBN 180NORMALIZED) APT1004R/904R/1004R2/904R2B

    sml1004r2bn

    Abstract: 1004r
    Text: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S 1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 SML1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML1004RBN SML904RBN SML1004R2BN SML904R2BN 1004RBN 904R2BN 1004R2BN 904RBN O-247AD 1004r

    1004rbn

    Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
    Text: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y 1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D APT1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1004RBN APT904RBN APT1004R2BN APT904R2BN 904RBN 1004RBN 904R2BN 1004R2BN 5S71DT 0Q0E171 APT1004

    1004R2BN

    Abstract: APT904RBN Apt904r2bn 1004rbn
    Text: O A d va n ced P o w er Te c h n o l o g y D 1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1004RBN APT904RBN APT1004R2BN APT904R2BN 1004RBN 904R2BN 1004R2BN 904RBN /904R/1004R2/904R2BN 10OmS