dn1003f
Abstract: LTC4412 DN1003 1N5819 FDN306P Si4953DY LTC4412s diode f03
Text: advertisement Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications – Design Note 1003 David Laude Introduction Many modern electronic devices need a means to automatically switch between power sources when prompted by the insertion or removal of any source. The LTC 4412
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LTC4412.
LTC4412
DN1003
Si4953DY
dn1003f
1N5819
FDN306P
LTC4412s
diode f03
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GW209
Abstract: supercapacitor spice supercapacitor AGW210 GS205 supercapacitors capxx 2AC45 GW214 GW208
Text: cap-XX APPLICATION NOTE No. 1003 The Supercapacitor Solution to GPRS and Other Pulsed Loads on CompactFlash and PC Cards Revision 1.0, December 2002 Outline CompactFlash and PC Card products are now being designed with pulsed-load subsystems, such as GPRS and GSM modules. These subsystems frequently require peak currents that exceed the
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Rack and Panel Connectors
Abstract: sgm26
Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book RACK AND PANEL CONNECTORS VISHAY DALE VSE-DB0031-1003 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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VSE-DB0031-1003
Rack and Panel Connectors
sgm26
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MIL-STD-883 method 2003
Abstract: 89116-006 MIL-STD relays CT-101 CT-102 CT-103
Text: Solid-State Relays CT101/102/103 Semitronics Features o o o o o Bi-Directional Power MOSFET Output Stage Extremely Low Ouptut Leakage Optical Isolation Available to W and Y Mil-R-28750C Screening QPL Approved to DESC Drawing 89116 Applications o o o o o o
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CT101/102/103
Mil-R-28750C
CT-100
Tj/30)
MIL-STD-883 method 2003
89116-006
MIL-STD relays
CT-101
CT-102
CT-103
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3000 watts subwoofer circuit diagram
Abstract: 400 watt subwoofer circuit diagram 12v 50 watt subwoofer circuit diagram 500 watt audio subwoofer 100 watt subwoofer circuit diagram subwoofer 400 watts amplifier subwoofer amplifier circuit diagram 50 watt subwoofer circuit diagram 12 volts 50 watt subwoofer circuit diagram 500 watt subwoofer circuit diagram
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2070 STEREO 70W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Preliminary Information Revision 2.1 – October 2003 GENERAL DESCRIPTION The TK2070 (TC2001/TPS1035 chipset) is a bridged stereo 70W continuous average power per
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TK2070
TC2001/TPS1035
TK2070
TC2001
TPS1035
3000 watts subwoofer circuit diagram
400 watt subwoofer circuit diagram
12v 50 watt subwoofer circuit diagram
500 watt audio subwoofer
100 watt subwoofer circuit diagram
subwoofer 400 watts amplifier
subwoofer amplifier circuit diagram
50 watt subwoofer circuit diagram
12 volts 50 watt subwoofer circuit diagram
500 watt subwoofer circuit diagram
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TPS1035
Abstract: TRIPATH TC2001 TC2001 y1b smd transistor 3000 watt audio circuit diagram 2N3906 DS 100 watt zener diode 24v mosfet for audio 5.1 circuit 2N3906 SMD TRIPATH
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2019 STEREO 20W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Preliminary Information Revision 2.1 – October 2003 GENERAL DESCRIPTION The TK2019 (TC2001/TPS1035 chipset) is a stereo single ended 20W
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TK2019
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TK2019
TC2001
TPS1035
TRIPATH TC2001
y1b smd transistor
3000 watt audio circuit diagram
2N3906 DS
100 watt zener diode
24v mosfet for audio 5.1 circuit
2N3906 SMD
TRIPATH
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IT1750
Abstract: XIT1750
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch CORPORATION IT1750 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Low ON Resistance • Low Cdg Gain • High • Low Threshold Voltage Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . . 25V
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IT1750
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200oC
150oC
10sec)
300oC
300ms.
IT1750
XIT1750
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2N4351
Abstract: mosfet 2n4351 X2N4351
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage
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2N4351
100mA
-65oC
200oC
-55oC
150oC
10sec)
300oC
300ms.
2N4351
mosfet 2n4351
X2N4351
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2N4351
Abstract: mosfet 2n4351 X2N4351
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage
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2N4351
100mA
-65oC
200oC
-55oC
150oC
10sec)
300oC
300ms.
DS002
2N4351
mosfet 2n4351
X2N4351
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74389
Abstract: No abstract text available
Text: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7904BDN
S-70624Rev.
09-Apr-07
74389
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Si3460BDV
Abstract: 74388
Text: SPICE Device Model Si3460BDV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3460BDV
S-70623Rev.
09-Apr-07
74388
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3N170-1
Abstract: 3N170 3N170-71 3N171 X3N170-71
Text: N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input
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3N170-1
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X3N170-71
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3N170
Abstract: 3N170-71 3N171 X3N170-71
Text: N-Channel Enhancement Mode MOSFET Switch LLC 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input
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3N170
3N171
DS019
3N170-71
3N171
X3N170-71
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7904BDN
18-Jul-08
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16c72a
Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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DS00701A-page
16c72a
P16C72A
1F04
AN701
5v power supply using lm7805 with bridge rectifier
5V power supply using LM7805 and bridge rectifier
scl 1003
28E4
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16c72a
Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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16c72a
5v power supply using lm7805 with bridge rectifier
393f
AN701
A 393F
inductor 100uH
p16c72a
28E8
1uf/35v
3C50
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16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
D-81739
16c72a
DS275
P16C72A
16C72
1uf/35v
A 393F
buck converter with dsPIC
KI 78L05
PID control dsPIC
PID control dsPIC DC motor
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1004 smd
Abstract: SMD1004 SMD1001 RS 1003 smd lg diode
Text: SEMTECH SIE CORP D 0131131 000E25D 2 TSJ-O? SEMTECH CORPORATION MICROELECTRONICS DIVISION SMD SMD SMD SMD N-Channel Power MOSFETs, IN HERMETIC ISOLATED TO -220 PACKAGE Ideally suited for applications such as switching p o w e r supplies, m otor controls, Inverters, choppers,
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000E25D
SM883
00052S5
1004 smd
SMD1004
SMD1001
RS 1003
smd lg diode
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IT1750
Abstract: No abstract text available
Text: calocflc Co» »» ^ N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch IT1750 A B S O L U T E M AX IM U M R AT IN G S Ta = 25°C unless otherwise specified FEATURES • • • • L o w O N R é s is ta n c e Low Cdg H igh G ain L o w T h re sh o ld V oltage
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IT1750
100mA
10jiA,
300ms
IT1750
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BS212
Abstract: GG01 BS192
Text: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,
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GG01403
BS107
BS108
BS112
BS170
BS189
BS212
GG01
BS192
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IRFIZ44
Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFWZ44/40
IRFIZ44/40
IRFWZ44/IZ44
IRFWZ40/IZ40
IRFWZ44
IRFIZ44
IRFWZ40
IRFIZ40
LS50A
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Untitled
Abstract: No abstract text available
Text: IRFS254A Advanced Power MOSFET FEATURES BV,DSS = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VDS= 250V
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IRFS254A
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BS192
Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.
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BS107
BS108
BS112
BS170
BS189
170rox.
DO-41
DO-35
BS192
BS212
D 92 M - 03 DIODE
D 92 M - 02 DIODE
10D3
2n3904, itt
c 92 M - 02 DIODE
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irf6348
Abstract: IRF7206 HEXFET Power MOSFET hexfet navigator IBF7306 IRFBC406
Text: Internationa! IO R Rectifier The HEXFET Power MOSFET Navigator Through-Hole Devices KEY: Part number FOD Document # Date for Date for Samples Production TO-220 TO-220 FullPak illustrations not to scale TO-247 (TO-3P) 'ï« N A T I C + iA L ÎE C Ï .N E *
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O-220
O-220
O-247
TD-220
irf6348
IRF7206
HEXFET Power MOSFET
hexfet navigator
IBF7306
IRFBC406
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