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    1000V BIPOLAR TRANSISTOR Search Results

    1000V BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    1000V BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNT

    induction heater

    Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNT 100oC induction heater FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		PDF FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater

    Untitled

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E


    Original     		PDF AP30G100W 30G100W

    igbt induction cooker

    Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD FGA50N100BNTD FGA50N100BNTDTU igbt induction cooker FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD

    igbt induction cooker

    Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD igbt induction cooker induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A

    fairchild induction cooker

    Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD FGA50N100BNTD fairchild induction cooker induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN

    induction cooker application notes

    Abstract: No abstract text available
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		PDF FGA50N100BNTD FGA50N100BNTD induction cooker application notes

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free


    Original     		PDF AP30G100W-HF-3 100oC AP30G100 30G100W

    transistor TO-3P Outline Dimensions

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant


    Original     		PDF AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions

    CT60AM-20

    Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode


    OCR Scan     		PDF CT60AM-20 CT60AM-20 CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


    OCR Scan     		PDF CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB PLC hGE D • Û1331Û7 OOODbfiH bH3 MOSPOWER4 IGBT = rr= SEM E LAB SML45G100BN 1000V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter


    OCR Scan     		PDF SML45G100BN MIL-STD-750 O-247AD

    transistor BF 502

    Abstract: 502 TJ
    Text: — SEMELAB PLC bOE D = p r= “ ill“ • 8133187 / /N^ i^ -P ack QDD0C1D4 0 2 3 ■ SI1LB MOS POWER BFNk| 4 IG B T T 3 V i \ SEME LAB_ SML200G100BFN 1000V 200A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR


    OCR Scan     		PDF SML200G100BFN SML200G100BFN MIL-STD-750 transistor BF 502 502 TJ

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45

    APT40GF100BN

    Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
    Text: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF DES71Ã APT40GF100BN TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS

    APT50GF100BN

    Abstract: 780L
    Text: ADVANCED POWER TECHNOLOGY LIE D • DeSTIGT OOOOflm 2fiS ■ AVP A dvanced P o w er Te c h n o l o g y APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings:


    OCR Scan     		PDF APT50GF100BN -55nd O-247AD 780L

    204AA

    Abstract: No abstract text available
    Text: SEHELAB PLC bOE D • 0133107 □□□QficJ4 354 ■ S M L B MOS POWER IGBT M il SEM E SML25G100AN LAB 1000V 4 25A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol ^CES All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF SML25G100AN SML25G100AN 204AA

    sml40g100an

    Abstract: PIC204
    Text: SEMELAB PLC = ^ bDE P • 6133157 00006^5 = M O S r a s a SEME SflLB_ P O W E R 4 'T - Z ° t - Z ì IG B T SML40G100AN LAB TTT ■ 1000V 40A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan     		PDF SML40G100AN SML40G1he sml40g100an PIC204

    transistor GC cd

    Abstract: No abstract text available
    Text: A DV A NC ED POWER TECHNOLOGY b lE 0 2 S 7 ti D ,i D GDODflbb 310 HAVP ADVANCED PO W ER Te c h n o lo g y APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan     		PDF APT45GL100BN transistor GC cd

    APT90GF100JN

    Abstract: No abstract text available
    Text: A dvanced POWÊDi Te c h n o l o g y * APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP I’\JWER m o s iv ®ig b t S Ä " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan     		PDF APT90GF100JN E145592 APT90GF100JN OT-227

    APT30G100BN

    Abstract: No abstract text available
    Text: ADVANCES POKER TECHNOLOGY blE • 02S7*lQci ODOO'ÌQM TSM M A V P A d v a n ced po w er Te c h n o l o g y 9 APT30G100BN 1000V 30A POWER MOS 1V IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


    OCR Scan     		PDF APT30G100BN O-247AD