Untitled
Abstract: No abstract text available
Text: INTERNATIONAL mine RESISTIVE S3E D 4ÔS754S OQDDShb T -6 3 . -Û5* _ TANFILM SUBMINIATURE SURFACE MOUNT PRECISION DIVIDER Encapsulation, including color code indicator Self passivated tantalum nitride dual resistor element SMT-TEE SERIES • Subminiature 0.075" x 0.075"
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S754S
MIL-R-83401)
Code---------------------------------01
1000S2
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diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
diode 5082-3080
5082-3080
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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Untitled
Abstract: No abstract text available
Text: 1840RH/883S S E M I C O N D U C T O R September 199Z Rad-Hard 16 Channel CMOS Analog Itiplexer with High-Z Analog Input Protection Pinouts This C ircuit is Processed in A ccordance to M il-S td-883 and is Fully C onform ant Under the Provisions of Paragraph 1.2.1.
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1840RH/883S
td-883
-1840RH/883S
MIL-M-38510
1000ns
HS-1840RH/883S
90e04A/cm2
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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Untitled
Abstract: No abstract text available
Text: A word about the company you’re dealing with . . . Micro-Ohm Corporation had its beginning in 1960. It be gan as a small precision resistor company. Its goal was to manufacture the finest precision wirewound resistors made. In 1966 a line of precision power resistors was
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1000S2
100f2
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DAC IC 1408
Abstract: AD1408 DAC IC 1408 details specifications of DAC 1408 AD1508 AD1408-8D AD1408-7D pin diagram of IC 1408 dac 08 1508
Text: ANALOG DEVICES □ 8 Bit Monolithic Multiplying D/A Converter FEATURES Improved Replacement for Industry Standard 1408/1508 Improved Settling Time: 250ns typ Improved Linearity: ±0.1% Accuracy Guaranteed Over Temperature Range -9 Grade High Output Voltage Compliance: +0.5V to -5 .0 V
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250ns
157mW
16-PIN
ad1408/ad1508
AD1408-7D
AD1408-8D
AD1408-9D
AD1508-8D
AD1508-9D
DAC IC 1408
AD1408
DAC IC 1408 details
specifications of DAC 1408
AD1508
pin diagram of IC 1408
dac 08 1508
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Untitled
Abstract: No abstract text available
Text: IDT74ALVC1G14 ADVANCE INFORMATION 3.3V CMOS SINGLE SCHMITTTRIGGER INVERTER BE FE A T U R E S : D E S C R IP T IO N : - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 0.65mm pitch PSOP package
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IDT74ALVC1G14
MIL-STD-883,
200pF,
ALVC1G14:
ALVC1G14
IDT74LVC1G79A.
IDT74ALVC1G04.
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N ; b MPC508A MPC509A | b ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: +15V • STANDBY POWER: 7.5mW typ
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MPC508A
MPC509A
70Vp-p
MPC508A
MPC509A
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transistor bd 292
Abstract: batery ferrite core flyback batery MAX650 MAX650ACPD MAX650ACWE MAX650AEPD MAX650AEWE MAX650BCPD MAX650BCWE
Text: >1/1 >J X I >1/1 19-2886; Rev 0; 5/92 -48V to +5V Output S w itching DC-DC C onverter The M A X 650 is a lo w -p o w e r fix e d + 5V o u tp u t s w itc h in g D C -D C c o n v e rte r d e s ig n e d fo r o p e ra tio n fro m very high n e g a tiv e in p u t vo lta g e s. All c o n tro l fu n c tio n s a n d a 140V,
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MAX650
250mA
transistor bd 292
batery
ferrite core flyback batery
MAX650ACPD
MAX650ACWE
MAX650AEPD
MAX650AEWE
MAX650BCPD
MAX650BCWE
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Untitled
Abstract: No abstract text available
Text: >1/1>1X1>1/1 19-2886; Rev 0; 5/92 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r « The M A X 650 fe a tu re s u s e r-c o n tro lla b le o p e ra tin g fre q u e n c y a n d a s e p a ra te low v o lta g e d e te c to r w ith a d ju s t
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Untitled
Abstract: No abstract text available
Text: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re
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MAX650
250mA
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unitrode 655
Abstract: M4302 M4300 UM4300 UM4301 UM4306 UM7300 UM7301 jm95 00103595
Text: PIN DIODE UM4300 SERIES UM7300 SERIES For A tte n u a to r A p p lic a tio n s Features • Extremely low distortion performance • Useful frequency range extends below 500 KHz • Power dissipation to 20W UM4300 • Capacitance as low as 0.7 pF (UM7300)
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UM4300)
UM7300)
UM4300
UM7300
unitrode 655
M4302
M4300
UM4301
UM4306
UM7301
jm95
00103595
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Untitled
Abstract: No abstract text available
Text: HS-508ARH Semiconductor Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection February 1996 Features Pinouts HS1-508ARH 16 LEAD SIDEBRAZE DIP MIL-STD-1835, CDIP2-T16 TOP VIEW • Devices QM L Qualified in Accordance with MIL-PRF-38535
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HS-508ARH
HS1-508ARH
MIL-STD-1835,
CDIP2-T16
MIL-PRF-38535
100ns/DIV.
HS-508ARH
68e04
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Untitled
Abstract: No abstract text available
Text: Special Resistive Chip Devices \ High Power Chips & High TCR Sensors I For high power applications, high thermally conductive ceramics, BeO or Aluminum Nitride, can be used as substrate material. Resistor m aterial can be either Nichrome or Tantalum Nitride. Nichrome is
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1000Q
1000S2
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mallory VTL
Abstract: VTL470S50 VTL22S63 VTL220S25 VTL470S25 VTL22S25
Text: • Type VTL MallorY Radial Leaded Capacitors 85°C - General Purpose 5 to 18 mm Diam eters GENERAL SPECIFICATIONS D C Leakage Current: I = .01 C V + 3 mA maximum C = Capacitance in nF V = Rated Voltage I = Leakage Current in mA Q A Stability Test: Apply W V D C for 2 ,0 0 0 hrs at +85°C
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512X1
630X1
10X20
13X20
13X31
16X31
16X38
VTLR47SI00
VTL2R2S100
mallory VTL
VTL470S50
VTL22S63
VTL220S25
VTL470S25
VTL22S25
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HOA0149
Abstract: No abstract text available
Text: HOA0149 Reflective Sensor FEATURES • Phototransistor output • Focused for maximum response • Low profile housing DESCRIPTION The HOA0149 consists of an Infrared emitting diode and an NPN silicon phototransistor encased side-by-slde on converging optical axes in a black thermoplastic
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HOA0149
HOA0149
SEP8505
SDP8405.
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Untitled
Abstract: No abstract text available
Text: N P S Senes R A D IA L LE A D T Y P E Fe at u re s • T h i s m o d e l is h e i g h t 5 m m as t h e “ N P 5 " s e r i e s • IM o n -p o la r S pec if ic ati o ns • • • • « O p e r a t i n g t e m p e r a t u r e r a n g e : —4 0 C — + 8 5 C
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120Hz.
120Hz
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440ls10
Abstract: 1151B 20/25YTD22
Text: A C O M P A N Y OF AC LINE RATED Ceramic Disc Capacitors SPRAGUE Cera-mite , X and Y EMI/RFI Filter, Across th e Line, Line By-Pass and Antenna Coupling Types * Represents means to limit transient current to 100 amperes or less. * No means to limit transient current provided.
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HOA0860
Abstract: No abstract text available
Text: HOA086X/087X Transmissive Sensor FEATURES • Phototransistor output • Accurate position sensing • Four mounting configurations • 0.125 in. 3.18 mm slot width • Choice of detector aperture • Choice of opaque or IR transmissive housings DESCRIPTION
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HOA086X/087X
HOA086X/087X
HOA0860
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Untitled
Abstract: No abstract text available
Text: -508A RH/883S S E M I C O N D U C T O R September 1 Radiation Hardened 8 Channel CMOS Multiplexer with Overvoltage Protection Pinouts • This Circuit Is Processed in Accordance to MIL-STD883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1.
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-508A
RH/883S
HS1-508ARH/883
MIL-M-38510
MIL-STD883
HS-508ARH/883S
68e04
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Untitled
Abstract: No abstract text available
Text: æ HS-26C32RH HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Receiver March 1995 Features • Pinouts 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION 3 -Total Dose Up to 300K RAD Si
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HS-26C32RH
HS1-26C32RH
RS-422
138mW
038mm)
00bl20fl
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS — U N IT R O D E Secondary Side Average Current Mode Controller FEATURES UC1826 UC2826 UC3826 DESCRIPTION Practical Secondary Side Control of Isolated Power Supplies 1MHz Operation Tailored Loop Bandwidth Provides Excellent Noise Immunity
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UC1826
UC2826
UC3826
70MHz,
UC1826
UDG-95017-1
DD15721
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HDS-050
Abstract: s1000h HDS05 op 30MHZ HOS-050 HOS-050A HGS-050
Text: Fast Settling Video Operational Amplifier ANALOG DEVICES FEATURES 80ns Settling to 0.1%; 200ns Settling Time to 0.01% 100MHz Gain Bandwidth Product 55MHz 3dB Bandwidth 100mA Output Capability @ ±10V Maximum Tempco of 35/ltV/°C HOS-OSOA ^ APPLICATIONS A to D Input Amplifier
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200ns
100MHz
55MHz
100mA
HOS-050A)
HOS-050
H0S-05(
300juV/
100ns
HDS-050
s1000h
HDS05
op 30MHZ
HOS-050A
HGS-050
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