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    100 AMPERES NPN DARLINGTON Search Results

    100 AMPERES NPN DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation

    100 AMPERES NPN DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100 amp npn darlington power transistors

    Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D 100 amp npn darlington power transistors MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120

    MJD122T4G

    Abstract: TRANSISTOR MJD122
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122

    tip120tip122

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    MJD127T4

    Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125

    TIP125-TIP127

    Abstract: TIP120-TIP122 2N6040-2N6045 MJD122G MJD122T4G MJD127G 2N6040 2N6045 MJD122 MJD127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122G MJD122T4G MJD127G 2N6040 2N6045 MJD122 MJD127

    MJD127T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    transistor cross reference

    Abstract: BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH100  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers.


    Original     		PDF BUH100 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor cross reference BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T

    2sC144

    Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for


    Original     		PDF MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100

    2SD436

    Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100

    2sc115

    Abstract: BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL44 * BUL44F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state–of–the–art die designed


    Original     		PDF BUL44/BUL44F BUL44F, Recognize32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sc115 BU108 2sc2270 2N6109 BD743D sec tip42c replacement for TIP147 TIP2955 DATA MJ1000 NSP2100

    BD127

    Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007

    MJ1004

    Abstract: MJ10004 MJ-10004
    Text: 1165904 NPN silicon power darlington transistors with base-emitter speedup diode. The MJ1004 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall tim is critical. They are particularly suited for line operated


    Original     		PDF MJ1004 MJ10004 MJ10004 MJ-10004

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    Untitled

    Abstract: No abstract text available
    Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. Important: For the latest information, visit our website http://www.microsemi.com.


    Original     		PDF 2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315,

    Untitled

    Abstract: No abstract text available
    Text: 2N6058 and 2N6059 Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV


    Original     		PDF 2N6058 2N6059 MIL-PRF-19500/502 O-204AA O-204AA T4-LDS-0307,

    IN5825

    Abstract: MJF122 MSD6100 TIP122
    Text: NPN MJF122 SILICON POWER DARLINGTON 6 AMPERES 100 VOLTS 30 WATTS SILICON POWER DARLINGTON FOR ISOLATED PACKAGE APPLICATION .designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically


    OCR Scan     		PDF TIP122 E69369, MJF122 O-254 IN5825 MJF122 MSD6100 TIP122

    Untitled

    Abstract: No abstract text available
    Text: Senes PTC10015, PTC 100*16 NPN Silicon Power Dorlington Transistors 50 Amperes • 500 Volts FEA TU R ES • High Voltage Rating - 500 Volts Sustaining • Glass Passivated Die to Provide Excellent High Tem perature Stability • Overload Short Circuit Rating


    OCR Scan     		PDF 20/ns 200/iH 200/xH

    MJ100AA45

    Abstract: No abstract text available
    Text: 6367254 M OT O RO L A SC XSTRS/R F 96D D r -3 3 -3 5 " 81495 Order this data sheet by MJ100AA45/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ100AA45 NPN Silico n Pow er Transisto r Module Energy M an age m e n t Series DARLINGTON POWER TRANSISTOR 100 AMPERES


    OCR Scan     		PDF MJ100AA45/D MJ100AA45 07A-01 MK145BP, CS2271 MJ100AA45

    DIODE 40c 0649

    Abstract: MJ100B3D45
    Text: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS


    OCR Scan     		PDF MJ100B3D45/D 14A-02 14A-02 MJ100B3D45 CM694 DIODE 40c 0649 MJ100B3D45

    NPN power transistor 15A amperes

    Abstract: npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11403508 DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex
    Text: 7 2 9 4 6 2 1 POWEREX INC m t/B iE X DËTJ 75T4L.21 0D057DS 3 J~'o • r - Í 3 ~ » ? DA11/DB12 NPN Power Switching Darlington Transistor Sets Powerex, Inc., H illls Street, Youngwood, Pennsylvania 15697 412 925-7272 300-350-800 Amperes/ 400-500 Volts Features:


    OCR Scan     		PDF 0D057DS DA11/DB12 DA11403508 Amperes/400-500 NPN power transistor 15A amperes npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICONÎ SECTOR SbE D • File Number 2361 M3DBB71 DGMGÛH? «HAS D64DV5j6,7 D64EV5,6,7 “ 50-Ampere N-P-N Darlington Power Transistors 3 5 - Z ^ TERMINAL DESIGNATIONS c E FLANGE Features: ■ High speed ts < 5.0 //sec., tr < 3.0 fjsec, ■ High voltage: 400-500 Vq ^ q


    OCR Scan     		PDF M3DBB71 D64DV5j6 D64EV5 50-Ampere D64DV D64EV D64DV5

    GE6062

    Abstract: GE6060 ge6061
    Text: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF 43QHE, GE6060 GE6061 GE6062 20-Ampere 204AA GE6060, GE6061, GE6062

    400LC

    Abstract: NPN transistor Ic 50A td tr ts tf D66GV D66GV5 D66GV6 D66GV7 high power diode transistor 600 volts.50 amperes transistor 400 volts.50 amperes
    Text: H lfîH Q P F F n D66GV5,6,7 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 50 AMP, 125 WATTS The D66GV is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device


    OCR Scan     		PDF D66GV5 D66GV 400LC NPN transistor Ic 50A td tr ts tf D66GV6 D66GV7 high power diode transistor 600 volts.50 amperes transistor 400 volts.50 amperes

    diode j3x

    Abstract: D67DE5 D67DE 400-500 D67DE6 D67DE7 D67DE ZN442 k 518
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS The General Electric D67DE is a high current power darlington. It features collector isolation from the heat sink, an internal construction designed for stress-free operation at temperature extremes, hefty screw terminals for emitter and


    OCR Scan     		PDF D67DE5 D67DE diode j3x D67DE 400-500 D67DE6 D67DE7 ZN442 k 518