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    100 AMP DARLINGTON TRANSISTORS Search Results

    100 AMP DARLINGTON TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100 AMP DARLINGTON TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FXT704

    Abstract: ZTX704 100v 1a darlington transistor DSA003757
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlington transistors REFER TO ZTX704 FOR GRAPHS


    Original     		PDF FXT704 ZTX704 -100V, -10mA* -10mA, -100mA, 20MHz FXT704 100v 1a darlington transistor DSA003757

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


    Original     		PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    2SC2411KR

    Abstract: MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124
    Text: SC-59 BIPOLAR TRANSISTORS NPN TRANSISTORS The latest comprehensive data to fully support these parts is readily available. • • • • • • New Product Type Function 2SC2411KP amplifier 2SC2411KQ amplifier 2SC2411KR amplifier 2SC2412KQ general purpose


    Original     		PDF SC-59 2SC2411KP 2SC2411KQ 2SC2411KR 2SC2412KQ 2SC2412KR 2SC2412KS 2SC2413KP 2SC2413KQ 2SC3837K MMST8598 2SD1781KQ 2SA1036KR MMST5086 MMST5088 2sa1037aks ROHM marking AQ 2SD1781KR MMST4124

    MJ10004

    Abstract: MJ-10004 OB 2268 darlington power transistor 10a
    Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line


    Original     		PDF MJ10004 MJ10004 MJ-10004 OB 2268 darlington power transistor 10a

    mj10021

    Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
    Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.


    Original     		PDF MJ10021 mj10021 ob 2268 60 amp npn darlington power transistors MJ1002

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


    Original     		PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    transistor TT 3043

    Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device


    OCR Scan     		PDF D67FP5 D67FP D67FP6 D67FP7 transistor TT 3043 tt 3043 al 336 IC TT 3043 d67fp6 aj204 638ak

    TIP120

    Abstract: TIP121 TIP122 TIP125 TIP126 TIP127 TIP127 circuit
    Text: TIP125,126, TIP127 PNP POWER DARLINGTON TRANSISTORS -60 - -100 VOLTS -5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP120, TIP121, TIP122 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features:


    OCR Scan     		PDF TIP120, TIP121, TIP122 TIP125 TIP127 T0-220AB TIP120 TIP121 TIP122 TIP126 TIP127 TIP127 circuit

    TIP127 equivalent

    Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
    Text: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:


    OCR Scan     		PDF TIP125, TIP126, TIP127 TIP120 TIP122 T0-220AB 20fjs, TIP127 equivalent TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent

    T0220IS

    Abstract: LC-485 D55A7D D55A D54A7D
    Text: D54A7D NPN POWER DARLINGTON TRANSISTORS 100 VOLTS 7 AMP, 30 WATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High D C Current Gain: hFE = 2000 Min. (at V q e = 3V, lc =3A) CASE STYLE TO-220IS


    OCR Scan     		PDF D54A7D D55A7D TQ-220 T0-220IS T0-220IS T0220IS LC-485 D55A7D D55A D54A7D

    D55A7

    Abstract: D55A D54A7D
    Text: D55A7p PNP POWER DARLINGTON TRANSISTORS -100 VOLTS -7 AMP, 30 WA1 rrs Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High DC Current Gain: hF E = 2000 Min. (at V c E = -3V, lc = ~3A) CASE STYLE TO-220IS


    OCR Scan     		PDF D55A7| D54A7D TQ-220 T0-220IS D55A7 D55A D54A7D

    2Sa1045

    Abstract: 2SC2435 2sa104
    Text: 37C • 37^7L2 G001ÖL3 a FUJITSU 2SC2435 M ICROELECTRONICS 2SA1045 SILICON RING EMITTER 7 - 93- 33 DARLINGTON TRANSISTORS 10 AMP, 100 VOLT •10 absolute m a x im m ra tin g s Rating Symbol 2SC2435/2SA1045 Unit Collector to Base Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SC2435 2SA1045 2SC2435/2SA1045 2SA1045 O-220 2SC2435 2sa104

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		PDF NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD

    ECG280

    Abstract: ECG284 ECG287 darlington pair transistor Darlington npn 2 amp ECG288 ECG TO-220 ECG263 ECG266 ECG285
    Text: P H I L I P S E C G INC S4E D Transistors cont'd ECG Type Description and Application • t.bS3T5fi 0 0 0 7 1 5 3 Dit. H E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts


    OCR Scan     		PDF ECG260 ECG259) O-127 ECG261 ECG262) O-220 ECG262 ECG261) ECG263 ECG280 ECG284 ECG287 darlington pair transistor Darlington npn 2 amp ECG288 ECG TO-220 ECG266 ECG285

    ECG288

    Abstract: ECG280 ECG287 ECG286 ECG285 ECG262 ECG263 ECG284 ECG261 ECG260
    Text: Transistors cont'd Description and Application E C G Type ECG260 if! λ i (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base V olts BVcbo Collector To Emitter Volts b v C eo Base to Emitter Volts B V EBO Max. Collector Current I q A m ps


    OCR Scan     		PDF ECG260 ECG259) O-127 ECG261 ECG262) O-220 ECG262 ECG261 ECG263 ECG288 ECG280 ECG287 ECG286 ECG285 ECG284

    ECG245

    Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
    Text: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


    OCR Scan     		PDF ECG229 ECG232 ECG233 ECG234 ECG23S O-218) ECG257 O-127 ECG258 ECG257) ECG245 DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain darlington 40 A ECG238 ECG191

    ECG229

    Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
    Text: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


    OCR Scan     		PDF ECG229 ECG232 ECG233 ECG234 ECG23S T0-218) ECG257 O-127 ECG258 ECG257) ECG247 DIODE T28 ECG251 ECG191 ECG2541 transistor ecg246

    diode T132

    Abstract: resistor 22k ECG2355 resistor 10k ECG2352 ECG2343 ECG2344 ECG2347 resistor 4.7k ECG2365
    Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV c b o Description and Application Collector To Emitter Volts BV c e O Max. Collector Current lc Amps Base to Emitter Volts b v EBO Max. Device Diss. PD


    OCR Scan     		PDF ECG2340 O-126N T45-1 ECG2341 ECG2342) ECG2342 ECG2341 ECG2343 SP-92 T13-2 diode T132 resistor 22k ECG2355 resistor 10k ECG2352 ECG2344 ECG2347 resistor 4.7k ECG2365

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


    OCR Scan     		PDF T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360

    diode zener 218

    Abstract: diode t48 ECG2322 ECG2322 14 PIN DIP t48 zener ECG2328 218 zener diode 2 Amp zener diode t48 diode T48 regulator
    Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at T c = 2 5 °C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO BV c e O bv ebo Max. Collector Current lc Amps Max. Device


    OCR Scan     		PDF ECG2315 O-220 ECG2316 O-218) ECG2317 ECG2318 O-220J T41-1 ECG2337 diode zener 218 diode t48 ECG2322 ECG2322 14 PIN DIP t48 zener ECG2328 218 zener diode 2 Amp zener diode t48 diode T48 regulator

    TF 450

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


    OCR Scan     		PDF T0218 NTE2305) T0220 TF 450

    resistor 22k

    Abstract: mp sot 23 resistor 10k RF Transistors sot-23 ECG2406 resistor 47k resistor 2.2k ECG2426 ECG2401 ECG2402
    Text: PHILIPS E C G INC SME D Transistors cont'd ECG Type Description and Application • bbS3T2fl OOD Vlbl ITS H E C 6 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b O b v Ceo


    OCR Scan     		PDF ECG2401 OT-23 T20-4 ECG2402 ECG2403) ECG2403 ECG2402) resistor 22k mp sot 23 resistor 10k RF Transistors sot-23 ECG2406 resistor 47k resistor 2.2k ECG2426

    ecg36

    Abstract: ecg52 ECG37 60 amp npn darlington power transistors transistor ecg36 dual matched PNP ECG157 ECG46 ECG47 ECG37MCP
    Text: Transistors cont d Collector To Base Volts Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) bv ECG36 NPN-Si, Pwr Amp, Hi Speed ECG38MP* Switch (Compl to ECG37) Collector To Emitter Volts Base to Emitter Volts bvceo


    OCR Scan     		PDF ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 ecg52 60 amp npn darlington power transistors transistor ecg36 dual matched PNP ECG157 ECG46 ECG47

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201