Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100 100N 100 Search Results

    100 100N 100 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    LTC3336EV#TRMPBF Analog Devices 15V/200mA Nanopower (IQ < 100n Visit Analog Devices Buy
    LTC3336EV#TRPBF Analog Devices 15V/200mA Nanopower (IQ < 100n Visit Analog Devices Buy
    LTC3336ACBZ-1-R7 Analog Devices 15V/200mA Nanopower (IQ < 100n Visit Analog Devices Buy
    SF Impression Pixel

    100 100N 100 Price and Stock

    Nexperia PSMN071-100NSEX

    MOSFETs PSMN071-100NSE/SOT1220-2/DFN20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PSMN071-100NSEX 2,480
    • 1 $0.47
    • 10 $0.362
    • 100 $0.204
    • 1000 $0.137
    • 10000 $0.108
    		Buy Now

    onsemi NBRS2H100NT3G

    Schottky Diodes & Rectifiers Schottky Power Rectifier, Surface Mount, 2.0 A, 100 V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NBRS2H100NT3G 2,240
    • 1 $0.41
    • 10 $0.353
    • 100 $0.246
    • 1000 $0.156
    • 10000 $0.123
    		Buy Now

    Infineon Technologies AG IGQ100N120S7XKSA1

    IGBTs Y
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IGQ100N120S7XKSA1 1,624
    • 1 $9
    • 10 $9
    • 100 $7.55
    • 1000 $7.54
    • 10000 $7.54
    		Buy Now

    Infineon Technologies AG IKQ100N120CS7XKSA1

    IGBTs Y
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IKQ100N120CS7XKSA1 1,509
    • 1 $14.14
    • 10 $12.46
    • 100 $10.78
    • 1000 $9.76
    • 10000 $9.76
    		Buy Now

    Pulse Electronics Corporation PMS9505.100NLT

    Current Transformers 7.0mH 3kV 30A AECQ2 DCR=.5mohms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PMS9505.100NLT 899
    • 1 $2.97
    • 10 $1.9
    • 100 $1.78
    • 1000 $1.56
    • 10000 $1.5
    		Buy Now
    Find more 100 100N 100 price and stock on Findchips.com

    100 100N 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    stm32f107

    Abstract: MCBQVGA LD1117S33 pc10 k2 5 CS42L52 LIS302DL PC13-TAMPER-RTC BOOT03
    Text: C58 VDD1_5 C26 C27 C34 10uF 100n 100n 100n 49 74 99 27 10 +3,3V R36 VDDA C35 0R 100n R60 VREF+ C39 1k 0R R61 R69 E POT1 AV S A C1 100n PC4 VREF+ 0R 100n 50 75 100 28 11 C25 RESET 22 19 21 20 VDD_1 VDD_2 VDD_3 VDD_4 VDD_5 VSS_1 VSS_2 VSS_3 VSS_4 VSS_5 VDDA


    Original     		PDF STM32F107 PC13-TAMPER-RTC PC14-OSC32 PC15-OSC32 1800p 001uF 1800p MCBSTM32C-Vers20 50MHz stm32f107 MCBQVGA LD1117S33 pc10 k2 5 CS42L52 LIS302DL BOOT03

    TB214

    Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
    Text: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100


    Original     		PDF 22AWG, FT-37-61 FB-43-101 BN-61-2402 TB214, LQ801, 20MHz-1000MHz, TB214 bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101

    SDO21

    Abstract: n10 n75 JTAG 10P N-61 N78N12
    Text: N98 PS2DAT 97 N97 X32I 7 N7 X32O 8 N8 68 VDD_2 0R N99 99 VREF PVSS D+ 31 N31 D- 30 N30 RESET 94 25 N93 N92 R20 C14 0R VSS_0 R27 95 VSS_1 69 VSS_2 0R N[1.100] 10p 100n 100n 100n N80 80 AVDD XT1_IN 93 N70 70 AVSS XT1_OUT 92 N8 X32O Q1 N94 C8 N7 X32I R26 R13


    Original     		PDF PA7/SS21/ADC7 PA10/I2C1SDA PA11/I2C1SCL PA12/PWM0 PA13/PWM1 PA14/PWM2 PA15/PWM3 PD0/SS20 PD2/SDI20 PD3/SDO20 SDO21 n10 n75 JTAG 10P N-61 N78N12

    PC817 zener diode

    Abstract: diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A
    Text: 5 3 1 T2 T3 10mH D1 2 4 100n + 2 1 10 C3 220u D3 D2 STPS30H100 C4 4.7n R1 3 NTC - 16 +9V TRNSFMR PLT20 C2 t 1 4 C18 100n 100n D 3 T1 20mH 4 C1 2 3 2.5A FUSE N 2 DIODE BRIDGE F1 1 F 4 D L2 1 33K C19 2 47uH 1n C5 220u 14 D4 Q1 STX715 1N4148 R19 C6 220u R20 100


    Original     		PDF STPS30H100 PLT20 STX715 1N4148 STTH106 L5991 STP10NK60Z PC817 RL431 PC817 zener diode diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A

    BF245

    Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
    Text: DDSR1 10,688 MHz 10,712 MHz Oscillator C38 100n C36 C37 C1 100n 1n Oscillator Input X1 SOCKET +12V 7808 REG 7808 10,7 MHz CerRes ANTENNA SFE107 C15 in gnd out R16 100 E1 Regulator Q1 BF245 R1 47k R15 1k L1 L2 L3 0.33µ C2 150 0.39µ C3 270 0.33µ C4 270


    Original     		PDF SFE107 BF245 SA612A V02-Rev1 BF245 "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386

    Untitled

    Abstract: No abstract text available
    Text: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m


    Original     		PDF 2N6718 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: FZT653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original     		PDF FZT653 Freq140M StyleSOT-223 Code4-179

    Untitled

    Abstract: No abstract text available
    Text: SG252 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		PDF SG252 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: FCX704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3k


    Original     		PDF FCX704 Freq160M

    Untitled

    Abstract: No abstract text available
    Text: FCX604 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.2k


    Original     		PDF FCX604 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: BDB02D Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0


    Original     		PDF BDB02D Freq50M

    Untitled

    Abstract: No abstract text available
    Text: BC372-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.10k


    Original     		PDF BC372-16 Freq100M

    Untitled

    Abstract: No abstract text available
    Text: FZT704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3.0k


    Original     		PDF FZT704 Freq160MÃ

    Untitled

    Abstract: No abstract text available
    Text: FZT493 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original     		PDF FZT493 Freq150M StyleSOT-223 Code4-179

    Untitled

    Abstract: No abstract text available
    Text: SDT3504 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF SDT3504 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: LM161RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)


    Original     		PDF LM161RS

    Untitled

    Abstract: No abstract text available
    Text: SDT3512 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF SDT3512 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: LM161R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)


    Original     		PDF LM161R

    Untitled

    Abstract: No abstract text available
    Text: LM161S Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)


    Original     		PDF LM161S

    Untitled

    Abstract: No abstract text available
    Text: LM161 Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)


    Original     		PDF LM161

    Untitled

    Abstract: No abstract text available
    Text: 2N3599 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3599 Freq30M time700n

    Untitled

    Abstract: No abstract text available
    Text: MINIATURE INDUSTRIAL COMPRESSION LOAD CELL FOR INDUSTRIAL APPLICATIONS TO 200,000 NEWTONS LCMGD Series Shown Actual Size Compression 0-100 to 0-200,000 Newtons LCMGD $ 460 LCMGD-2K LCMGD-100N LCMGD-2KN MADE IN USA LCMGD-50KN NIST ߜ High Accuracy ߜ Low Profile


    Original     		PDF LCMGD-100N LCMGD-50KN LCMGD-200N LCMGD-500N LCMGD-10KN LCMGD-20KN LCMGD-200KN DP41-S,

    Untitled

    Abstract: No abstract text available
    Text: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJD243 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: ZTX653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original     		PDF ZTX653 Freq175M StyleTO-92 Code3-12