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    10 PIN TRANSISTOR AND MOS FET ARRAY Search Results

    10 PIN TRANSISTOR AND MOS FET ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    10 PIN TRANSISTOR AND MOS FET ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    Omron

    Abstract: MOS FET Relays 750H ST-100S omron relay electromechanical bake 10 PIN TRANSISTOR AND MOS FET ARRAY ultrasonic cleaning driving circuit
    Text: MOS FET Relays Technical Information Introduction New models with a wider range of characteristics provide an array of solutions, meeting the needs of today’s high performance applications. Our expanded range of MOS FET relays, Type G3VM, sets the benchmark in Solid State Relays SSRs . Products are manufactured


    Original     		PDF X302-E-1 Omron MOS FET Relays 750H ST-100S omron relay electromechanical bake 10 PIN TRANSISTOR AND MOS FET ARRAY ultrasonic cleaning driving circuit

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    pa1520

    Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters


    Original     		PDF PA1520B PA1520B PA1520BH pa1520 PA1520BH IEI-1213 MEI-1202 MF-1134

    PA1552BH

    Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and


    Original     		PDF PA1552B PA1552B PA1552BH PA1552BH PA1552 IEI-1213 MEI-1202 MF-1134 PA155

    G10597

    Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.


    Original     		PDF PA1500B PA1500B G10597 pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059

    2SC5586

    Abstract: 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09
    Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14


    Original     		PDF AC10A5021 SLA5058 SLA5081 SLA5055 SLA5088 SLA5046 SLA5049 SLA5070 SLA5054 SLA5057 2SC5586 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad
    Text: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 30V 1.0Ω 2.0A Order Number / Package Quad Ceramic DIP* VQ1001P * 14 pin side brazed ceramic DIP Advanced DMOS Technology High Reliability Devices


    Original     		PDF VQ1001 VQ1001P n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad

    NEC uPA 63 H

    Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’


    Original     		PDF uPA502T pPA502T SC-59 pPA503T NEC uPA 63 H NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet

    FAST DMOS FET Switches n-CHANNEL

    Abstract: VQ1004P VQ1004 VQ1004J
    Text: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) Quad Ceramic DIP* 60V 3.5Ω 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side brazed ceramic DIP Advanced DMOS Technology


    Original     		PDF VQ1004 VQ1004P VQ1004J FAST DMOS FET Switches n-CHANNEL VQ1004P VQ1004 VQ1004J

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56

    TEA-1035

    Abstract: TEA1035
    Text: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible


    OCR Scan     		PDF PA1576 itzPA1576 PA1576H IEI-1209) TEI-1202 MEI-1202 IEI-1207 TEA-1034 TEA-1035 TEA-1035 TEA1035

    MEI-1202

    Abstract: 10 PIN TRANSISTOR AND MOS FET ARRAY PA1524H
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA 1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION


    OCR Scan     		PDF uPA1524 PA1524H MEI-1202 10 PIN TRANSISTOR AND MOS FET ARRAY

    PA1552AH

    Abstract: PA1552 IC-3346 uPA1552A MEI-1202 TEA-1035 a1034
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1552A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The j«PA1552A is N-channel Power MOS FET A rray that b u ilt in 4 circuits designed fo r solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible


    OCR Scan     		PDF jUPA1552A //PA1552AH IEI-1209) PA1552AH PA1552 IC-3346 uPA1552A MEI-1202 TEA-1035 a1034

    MEI-1202

    Abstract: T100 IC-3333
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION


    OCR Scan     		PDF uPA1527 uPA1527H MEI-1202 T100 IC-3333

    nec 501 t

    Abstract: NEC pa 1501 n channel fet array UPA1501H
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR M<COMPOUND IJ‘IJ ‘IIIJIJ jlJI juP A 1501 r N-CHANNEL POWER MOS FET ARRAY


    OCR Scan     		PDF uPA1501 nec 501 t NEC pa 1501 n channel fet array UPA1501H

    PA1522H

    Abstract: MOS FET Array
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR P A 1 5 2 2 N-CHAIMIMEL POWER MOS FET ARRAY SWITCHING TYPE


    OCR Scan     		PDF uPA1522 PA1522H MOS FET Array

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS


    OCR Scan     		PDF uPA1527 /uPA1527

    A773* Transistor

    Abstract: fl7732c VQ1001P
    Text: VQ1001 ^ Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BV DSS/ ^DS O N b v dgs (max) (min) Quad Ceramic DIP* 30V i.o a 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceramic DIP Advanced DMOS Technology


    OCR Scan     		PDF VQ1001 VQ1001P --25S2 A7732TS D00443Ô A773* Transistor fl7732c VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: VQ1001 Çj Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BVdss/ BVpcs 30V f*DS ON) Order Number / Package • c kon ) (max) (min) Quad Ceramic DIP* 1.0Î1 2.0A VQ1001P * 1 4 pin side b ra zed ceram ic D IP


    OCR Scan     		PDF VQ1001 VQ1001P

    d2q transistor

    Abstract: No abstract text available
    Text: V Q 10 04 LJ S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BV dss / ^DS ON) Order Number / Package I d (ON) B V qcs (max) (min) Quad Ceramic DIP' 60V 3.5Ì2 1.5A VQ1004P Quad Plastic DIP


    OCR Scan     		PDF VQ1004P VQ1004J d2q transistor