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    10 PIN LASER DIODE Search Results

    10 PIN LASER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    10 PIN LASER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPL980-10-9-PD

    Abstract: slp980
    Text: SPL980-10-9-PD Pigtailed Coaxial Laser Diode Features Applications • • • • • • 980 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Communication Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function LD Cathode


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    PDF SPL980-10-9-PD SLP980-10-9-PD SPL980-10-9-PD slp980

    SPL850-10-4P-PD

    Abstract: No abstract text available
    Text: SPL850-10-4P-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 850 nm PM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function PD Anode


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    PDF SPL850-10-4P-PD SLP850-10-4P-PD SPL850-10-4P-PD

    NX8346

    Abstract: No abstract text available
    Text: LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8346TS NX8346TS PL10723EJ01V0DS NX8346

    Thermistor bth 100

    Abstract: 10 gb laser diode DFB ea 10 gb diode pin 1550 nm
    Text: Drawing No. JOG-00853 OKI Electronics Components Preliminary OL5150M Rev. 3:[10. 2001] 1550 nm 10 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION OL5150M is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 10 Gb/s operation in a 7-pin package with a K-connector.


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    PDF JOG-00853 OL5150M OL5150M 1550-nm OC-192) Thermistor bth 100 10 gb laser diode DFB ea 10 gb diode pin 1550 nm

    nec 2702

    Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
    Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8341 PL10525EJ03V0DS nec 2702 2702 NEC NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995

    NX8341

    Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
    Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8341 PL10525EJ02V0DS NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ

    TOSA pcb

    Abstract: No abstract text available
    Text: LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type


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    PDF NX8346TB NX8346TY NX8346TY OC-192 PL10722EJ01V0DS TOSA pcb

    NEC DIODE LASER

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8346TS NX8346TS NEC DIODE LASER

    Laser Diode 14 pin DIL

    Abstract: LSC3100 LSC3300 LSC3X00 spot light size photodiode
    Text: 14 Pin DIL Uncooled Laser Modules Technical Data LSC3X00 Features Description • Low Cost Plastic Package 14 Pin DIL • LSC3300: 100 µW (-10 dBm) Min. Power Output LSC3100: 1 mW (0 dBm) Min. Power Output • 1280 - 1330 nm Wavelength • Hermetic Laser Module


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    PDF LSC3X00 LSC3300: LSC3100: LSC3X00 Laser Diode 14 pin DIL LSC3100 LSC3300 spot light size photodiode

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type


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    PDF NX8346TB NX8346TY NX8346TY OC-192

    NX8341UJ

    Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
    Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8341 NX8341UJ NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


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    PDF NX6414EH R08DS0042EJ0100 NX6414EH

    nec 2702

    Abstract: nec 2702 K
    Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8341 nec 2702 nec 2702 K

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


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    PDF NX6342EP NX6342EP R08DS0050EJ0100 IEEE802

    nec 2702

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


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    PDF NX8341 nec 2702

    TOLD9442M

    Abstract: laser diode toshiba 650
    Text: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9442M TOLD9442M laser diode toshiba 650

    laser diode toshiba

    Abstract: TOLD9231M 670NM Laser-Diode told daiode
    Text: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9231M 670nm 15-4A1 laser diode toshiba TOLD9231M 670NM Laser-Diode told daiode

    laser diode toshiba

    Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
    Text: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    PDF OLD9441 650nm 15-4A1 646nm 651nm 656nm 10kHz, 500MHz) laser diode toshiba told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw

    laser diode toshiba

    Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
    Text: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9221M 670nm 15-4A1 laser diode toshiba told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura

    laser diode toshiba

    Abstract: TOLD9221M 670NM Laser-Diode DAiode
    Text: TOLD9221M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9221M 670nm laser diode toshiba TOLD9221M 670NM Laser-Diode DAiode

    laser diode toshiba

    Abstract: 670NM Laser-Diode laser diode 670nm
    Text: TOLD9231M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9231M 670nm laser diode toshiba 670NM Laser-Diode laser diode 670nm

    laser diode toshiba

    Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
    Text: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


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    PDF OLD9442M OLD9442 laser diode toshiba TOLD9442M laser diode toshiba 650 TOLD told9442 daiode

    laser diode toshiba

    Abstract: 2 Wavelength Laser Diode 650nm 50mw 12 pin laser
    Text: TOLD9441 MC TOSHIBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    PDF OLD9441 650nm 15-4A1 646nm 651nm 656nm 10kHz, 500MHz) laser diode toshiba 2 Wavelength Laser Diode 650nm 50mw 12 pin laser

    laser diode toshiba

    Abstract: 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650
    Text: TOLD9441 MD TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE


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    PDF OLD9441 650nm laser diode toshiba 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650