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    10 N J 400 V Search Results

    10 N J 400 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR2AS-8UE-T13#B00 Renesas Electronics Corporation 400V - 2A - Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR3AS-8UE-T13#B00 Renesas Electronics Corporation 400V - 3A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR3AS-8UE-T23#B00 Renesas Electronics Corporation 400V - 3A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR5AS-8UE-T23#B00 Renesas Electronics Corporation 400V - 5A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR05AS-8-T14#F01 Renesas Electronics Corporation 400V - 0.5A - Thyristor Low Power Use Visit Renesas Electronics Corporation
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    10 N J 400 V Price and Stock

    Vishay Intertechnologies VR25000001005JN400

    Metal Film Resistors - Through Hole VR25 5% N4 10M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VR25000001005JN400
    • 1 $0.46
    • 10 $0.357
    • 100 $0.15
    • 1000 $0.083
    • 10000 $0.068
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    Carling Technologies VVA9CNJ-100

    Rocker Switches VVA9CNJ-100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VVA9CNJ-100
    • 1 $3.76
    • 10 $3.37
    • 100 $2.9
    • 1000 $2.41
    • 10000 $2.32
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    Carling Technologies V4D1DNN1-J4400-000

    Rocker Switches V4D1DNN1-J4400-000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics V4D1DNN1-J4400-000
    • 1 $24.7
    • 10 $21.65
    • 100 $20.29
    • 1000 $19.67
    • 10000 $19.67
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    Power Integrations 1SP0335V2M1-5SNA0400J650100

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link, generic version
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335V2M1-5SNA0400J650100
    • 1 -
    • 10 $218.3
    • 100 $211.59
    • 1000 $211.59
    • 10000 $211.59
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    Power Integrations 1SP0335V2M1C-5SNA0400J650100

    Gate Drivers Gate Driver ONLY for 5SNA0400J650100 conformal coated module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335V2M1C-5SNA0400J650100
    • 1 -
    • 10 $292.9
    • 100 $283.89
    • 1000 $283.89
    • 10000 $283.89
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    Find more 10 N J 400 V price and stock on Findchips.com

    10 N J 400 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISS380

    Abstract: 400-02F sm 2025
    Text: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 11 1 N-Channel Enhancement Mode 2 10 1 11 Preliminary data 10 2 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ


    Original     		PDF 400-02F ISS380 sm 2025

    Untitled

    Abstract: No abstract text available
    Text: Precision Low Ohmic Value Resistor CTL05/CTL16/CTL10/CTL18/CTL12/CTL01 Series Chip Resistor HOW TO ORDER CTL 10 R015 F J M Packaging M = 7” Reel 10” Reel for 2512 V = 13” Reel TCR (ppm/°°C) R = +15 X = +25 J = +75 K = +100 N = +350 O = +400 FEATURES


    Original     		PDF CTL05/CTL16/CTL10/CTL18/CTL12/CTL01

    Untitled

    Abstract: No abstract text available
    Text: CURRENT SENSE RESISTORS CTL05/CTL16/CTL10/CTL18/CTL12/CTL01 Series Chip Resistor HOW TO ORDER CTL 10 R015 F J M Packaging M = 7” Reel 10” Reel for 2512 V = 13” Reel TCR (ppm/°°C) R = +15 X = +25 J = +75 K = +100 O = +400 N = +350 FEATURES Resistance as low as 0.001 ohms


    Original     		PDF CTL05/CTL16/CTL10/CTL18/CTL12/CTL01 08MENSIONS

    RCR70BY-10

    Abstract: RCR70BY-8 RCR70BY RCR70BY-12
    Text: 104 - - m h RCR70BY t - r m m i i 20.«s V m i- M V . 7V= 125‘C, * * # *14-:? 7 7, 10, i 2 ! i t s » â j . n u » « * uC TT RCR70BY 4 RCR70BY 6 RCK70BY-8 RC R70BY-10 RCR70BY-I2 V7j aAf 240 360 480 600 720 Vdrm 200 300 400 500 600 Vn.no 160 240 320 400


    OCR Scan     		PDF RCR70BY RCR70RY RCR70BY-8 RCR70BY-10 RCR70BY-12 7W25X, H-101 RCR70BY-12

    TIP540

    Abstract: TIP539 tca150c bdx 540 2N3440 TIP538 BUY71 TIP-540 bdx 65c
    Text: TYPES TIP538, TIP539. TIP540 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 200 V, 300 V, 400 V Min V BR CEO • 15-A Rated Continuous Collector Current • 125 Watts at 100°C Case Temperature • Min f j of 10 MHz at 10 V, 1 A


    OCR Scan     		PDF TIP538, TIP539. TIPB40 TIPS38 TIP539 TIP540 TIP540 tca150c bdx 540 2N3440 TIP538 BUY71 TIP-540 bdx 65c

    Untitled

    Abstract: No abstract text available
    Text: COIL: @ 25°C RF^iST^wrF CUST0MER DATA SHEET 400 OHMS *10% NOMINA I VO! TARF 9 0 VDC MUST flPFRATF 61 VDC — 4 " o— O k 3 6 VDC MAX, 1.1 VDC MIN. MUST RFI FASF 10 «sHnr* 75 v l n r i A I IL J J M t p m p f r a t i iRF M H T C, OPFRATF INO 1pLLO-_ urcnftic


    OCR Scan     		PDF F-715 M39016/21-043M

    Untitled

    Abstract: No abstract text available
    Text: TYPES 2N4416, 2N4416A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO . D L -S 6 81 0 6 4 9 , J A N U A R Y 1968 FOR VHF AM PLIFIER A ND M IX E R APPLICATIONS High Power G a in . . . 10 dB M in at 400 M Hz Low Noise F igure. . . 4 dB M a x af 400 M Hz


    OCR Scan     		PDF 2N4416, 2N4416A 400-M 7S222

    ic 7800

    Abstract: 58 hts
    Text: j MSE D HERRMANN K G • 443bZ7S 0000104 T ■ H R M N T Z 5 'O l Schnelle Thyristoren Fast Thyristors Thyristors rapides Thyristorentyp Type o f thyristors Type de thyristors HTS 11/04-TH 4 06 08 2 2 OC Œ £ > D V w 2 2 > < CL A A 400 10 600 800 HTS 17/04-PG 2 4 400 17


    OCR Scan     		PDF 4M3b275 11/04-TH 17/04-PG 80/06-UG1 85/06-PG1 130/06-VG 130/06-PG 16245-Ms ic 7800 58 hts

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


    OCR Scan     		PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49

    Untitled

    Abstract: No abstract text available
    Text: MegaMOS FET Module VMO 400-02F VDSS D25 RDS on = 200 V = 418 A = 4.2 mQ o1 N-Channel Enhancement Mode 11 I Preliminary data 10 T 2 Maximum Ratings Sym bol Test C onditions VDSS Tj = 25°C to 150°C 200 V vDGR T j = 25°C to 150°C; RGS= 10 k£2 200 V VGS


    OCR Scan     		PDF 400-02F 00D2315 400-02F 000231b

    Untitled

    Abstract: No abstract text available
    Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF740 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF740A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF740A O-220

    TIP-54

    Abstract: TIP51 TIP54
    Text: TYPES TIP51 THRU TIP54 N-P-N SILICON POWER TRANSISTORS • 100 mJ Reverse-Energy Rating • 250 V to 400 V Min V b r CEO • 100 W at 25°C Case Temperature • 5 A Peak Collector Current • 2.5 MHz Min f j at 10 V , 0.2 A TYPES TÏP51, TIP52, TIP53. TIP54


    OCR Scan     		PDF TIP51 TIP54 TIP52, TIP53. TIP51 TIP-54

    Herrmann

    Abstract: diodes herrmann type of diode S1200 DD0D131
    Text: HERRMANN "P- Ö l- û i KG 4 J> m S E 4 4 3 b e ? 5 1 2 b T h h r u n Schraubdioden Stud-base diodes Diodes à embases filetées HD 10/04-2 V V 400 800 12 1200 14 1400 16 1600 1200 ^1200 14 1400 =1550 16 1600 ^1750 11/04-2 400 08 800 12 1200 14 1400 16 1600


    OCR Scan     		PDF 443be 000012b 443L27S 000013H Herrmann diodes herrmann type of diode S1200 DD0D131

    TT6A

    Abstract: ZO 107 DA
    Text: 87697 10 • DIM E ■ 2.54 .100 SIG N AL PITCH 6.35 .250 _ I— ^ T Y P . .100 10.16 .400 RE F. POWER PITCH -n _ ^ |n —n l—J n —n l—^ n— SE E NO TE n—n l_ ^ |n _ n |_ j n—n Ì_ ^ |n —n Ì_ ^ A DIM C 17.02 .670 T 12.09 .476 \ l L 12.70 ' .500 '


    OCR Scan     		PDF

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


    OCR Scan     		PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode

    Untitled

    Abstract: No abstract text available
    Text: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl


    OCR Scan     		PDF BUZ60 7J51237

    Untitled

    Abstract: No abstract text available
    Text: IRF720 Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF720 249ave

    Untitled

    Abstract: No abstract text available
    Text: IRF720A Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF720A

    EDAL

    Abstract: V-Stamp EDAL INDUSTRIES edal rectifier 1N3613 rectifier 300 amp 1N3611 1N3612 1N3614 airx
    Text: EDAL INDUSTRIES INC J> 4.5 £ BS BDTSTlb □ 0 0 0 £ cìc] 400 • EDL Vs B. PIV SEE CHART ?0 20 AMPS V. V 10 U Amo. r- 300 U Amp. STYLE! A I RX 1 EDAL, '.TO Max @ Max @ POLARITY, ‘ — - @ »If Militi PIV ' PIV .25. 25 ’ @ 150 P/N • EXCEPT P/N PIV


    OCR Scan     		PDF 3CH571b 1N3611 1N3612 1N3613 1N3614 1N3611-1N3614 EDAL V-Stamp EDAL INDUSTRIES edal rectifier rectifier 300 amp 1N3614 airx

    Untitled

    Abstract: No abstract text available
    Text: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350

    N4003

    Abstract: 4005L 4003L 1N4007L 6A07 LT1504 LT1502 4004L 4006L LT2A
    Text: LITEM fll SILICON RECTIFIERS 1.0 AM PERE TO 10 AM PERES 50 VOLTS TO 1000 VOLTS V \ j Y P E NO. 50 100 200 400 600 800 C A SE 1000 Io 1a \ 1 1.5 2 1 N 4001L 1N 4002L 1N 4003L 1N 4004L 1 N 4005L 1N 4006L 1N 4007L A -405 1N4001 1N4002 1 N4003 1N4004 1N4005


    OCR Scan     		PDF 4001L 1N4001 LT1501 1N5391 LT2A01 LT4A01 LT6A01 LT10A01 4002L 1N4002 N4003 4005L 4003L 1N4007L 6A07 LT1504 LT1502 4004L 4006L LT2A

    Diode BAY 21

    Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
    Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j


    OCR Scan     		PDF 1N456 BAW21A CB-26) Diode BAY 21 Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D

    Untitled

    Abstract: No abstract text available
    Text: IRF730A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1.0Œ A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF730A