Z02W10V
Abstract: No abstract text available
Text: SEMICONDUCTOR Z02W10V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 10X No. 1 Item Marking Device Mark 10 Z02W10V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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Z02W10V
OT-23
Z02W10V
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2N7002 PHILIPS MARKING
Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 PHILIPS MARKING
2N7002 MARKING 702
Marking codes
2N7002
2n7002 MARKING
Type Transistors 702
codes marking 2N7002
sot23 02p
marking 702 sot23
BSN20 MARKING
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DIN 6784
Abstract: GPS05991 GSO05553 GSO05554 GSO05561 GSO05796 SCT-595 DIN6784 DIN-6784
Text: Package Outlines All dimensions in mm, unless otherwise specified 0.13 1.6 ±0.1 ax 10˚ m cathode marking 1.2 ±0.1 1 7˚ 0.8 ±0.1 2 0.3 0.6 ±0.1 GPS05991 SCD-80 +0.2 0.9 -0.1 1 2.5 ±0.2 +0.15 acc. to DIN 6784 0 ±0.05 A +0.2 cathode marking 1.7 -0.1 +0.2
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GPS05991
SCD-80
OD-323
GSO05561
OT-323
9O05554
GPW05795
MW-12
GPW05969
MW-16
DIN 6784
GPS05991
GSO05553
GSO05554
GSO05561
GSO05796
SCT-595
DIN6784
DIN-6784
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR533
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23
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BCR533
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23
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BCR533
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR533
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and
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CDA3S06G
OT23-6)
MDS0903002A
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Comchip Technology
Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand
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CDA3S06-G
OT23-6)
MDS0903002A
Comchip Technology
CDA3S06-G
SOT23 NE
SS MARKING sot23
TOP marking sot23-6
20 sot23-6 esd
diode network 16
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Q62702-C2262
Abstract: No abstract text available
Text: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262
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Q62702-C2262
OT-23
Q62702-C2262
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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BCR583
Abstract: BCW66 AEC-Q101C
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package
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BCR583
EHA07183
BCR583
BCW66
AEC-Q101C
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CRB 1.0 m
Abstract: CRB SERIES MARKING CODE S03
Text: CRA/CR Single T Filter Network Specifications: Resistor Tolerance TCR ppm/0C Resistor Power Rating (700C) Capacitor Tolerance Capacitor Voltage rating Operating Temp. Range (0C) +/-10% +/- 200 100mW +/-20% 20 v -55 ~ +150 Marking “CRA” or “ CRB “
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100mW
OT-23
250pF
OT-23
CRB 1.0 m
CRB SERIES
MARKING CODE S03
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BAS16
Abstract: BAS16D
Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6
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BAS16D
OT-23
BAS16
OD-123
D3/10
D-74025
13-Jun-03
BAS16
BAS16D
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Untitled
Abstract: No abstract text available
Text: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking
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BSR18A
OT-23
OT-23
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d2 SMD TRANSISTORs pnp npn
Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Text: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100
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OT-23
350mW
bc858b
bc558b
bc858c
bc558c
bc859
bc559
bc859a
bc559a
d2 SMD TRANSISTORs pnp npn
BCW600
2n2222a smd
smd transistors
B5R17
hS7 marking
darlington bc smd
smd marking BJ
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toko T1
Abstract: TK11817M
Text: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit _ 10.Pin Assignment 11.Block Diagram 12.Package Outline Dimensions/Marking
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TK11817M
DB3-I120
11817M.
TK1181*
QH7-B002.
DP3-F016.
DB3-I120
toko T1
TK11817M
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Marking 18A
Abstract: MARKING 8S SOT-23
Text: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C
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OCR Scan
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OT-23
MMBZ5221BLT1
MMBZ5222BLT1
MMBZ5223BLT1
MMBZ5224BLT1
MMBZ5225BLT1
MMBZ5226BLT1
MMBZ5227BLT1
MMBZ5228BLT1
MMBZ5229BLT1
Marking 18A
MARKING 8S SOT-23
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25CC
Abstract: G145 TK11819M K1181
Text: TK11819M SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Package Outline Dimensions/Marking
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OCR Scan
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DB3-G145
TK11819M
TK11819M.
TK1181*
QH7-B002.
DP3-F016.
25CC
G145
TK11819M
K1181
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SMD Code 12W SOT-23
Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED
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OCR Scan
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OT-23
350mW
CMPT2222A
CMPT2369
CMPT24
CMPT2907A
CMPT3640
CMPT3646
CMFT3904
CMPT3906
SMD Code 12W SOT-23
CXT5401 BK
SMD MARKING CODE 4E
C2TA44
SMD MARKING CODE FE sot89
marking code C3E SOT-89
npn smd bc550 smd
SMD Code 12W SOT23
marking BH SOT-223
marking da sot89
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345M
Abstract: S0T23-5 TK71 TK71345M
Text: TK71345M SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking
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OCR Scan
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TK71345M
DB3-I019
TK71345M
QH7-B012.
DP3-G014.
345M
S0T23-5
TK71
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