PEMB1
Abstract: No abstract text available
Text: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.
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PEMB11;
PUMB11
PEMB11
PUMB11
OT666
OT363
SC-88
PEMH11
PUMH11
AEC-Q101
PEMB1
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PEMB1
Abstract: No abstract text available
Text: PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 3 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.
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PEMB11;
PUMB11
PEMB11
OT666
OT363
PEMH11
SC-88
PUMH11
PEMB11
PEMB1
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Untitled
Abstract: No abstract text available
Text: 83B PDTA114EMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114EMB
DFN1006B-3
OT883B)
PDTC114EMB
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC114EMB
DFN1006B-3
OT883B)
PDTA114EMB.
AEC-Q101
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PDTA123Y
Abstract: No abstract text available
Text: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number Package
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PDTA123Y
PDTA123YE
OT416
SC-75
PDTC123YE
PDTA123YK
OT346
SC-59A
O-236
PDTC123YK
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t8 smd transistor
Abstract: No abstract text available
Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC114EMB
DFN1006B-3
OT883B)
PDTA114EMB.
AEC-Q101
t8 smd transistor
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Q62702-C2262
Abstract: No abstract text available
Text: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262
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Q62702-C2262
OT-23
Q62702-C2262
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Untitled
Abstract: No abstract text available
Text: 83B PDTA114EMB SO T8 PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114EMB
DFN1006B-3
OT883B)
PDTC114EMB
AEC-Q101
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PDTC144V
Abstract: No abstract text available
Text: PDTA144V series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement
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PDTA144V
PDTA144VE
OT416
SC-75
PDTC144VE
PDTA144VK
OT346
SC-59A
PDTC144VK
PDTA144VM
PDTC144V
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PDTA123YE
Abstract: PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A SC-75
Text: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number NXP JEITA
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PDTA123Y
PDTA123YE
OT416
SC-75
PDTC123YE
PDTA123YK
OT346
SC-59A
O-236
PDTC123YK
PDTA123YE
PDTA123YK
PDTA123YM
PDTA123YS
PDTA123YT
PDTA123YU
SC-101
SC-43A
SC-59A
SC-75
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PDTA144VE
Abstract: PDTA144VK PDTA144VM PDTA144VS PDTA144VT PDTA144VU SC-101 SC-43A SC-59A SC-75
Text: PDTA144V series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement
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PDTA144V
PDTA144VE
OT416
SC-75
PDTC144VE
PDTA144VK
OT346
SC-59A
PDTC144VK
PDTA144VM
PDTA144VE
PDTA144VK
PDTA144VM
PDTA144VS
PDTA144VT
PDTA144VU
SC-101
SC-43A
SC-59A
SC-75
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR533
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR533
EHA07184
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PUMD9
Abstract: No abstract text available
Text: PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 3 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.
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OT666
OT363
SC-88
AEC-Q101
PUMD9
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23
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BCR533
EHA07184
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BCR583
Abstract: BCW66 AEC-Q101C
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package
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BCR583
EHA07183
BCR583
BCW66
AEC-Q101C
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR583 Marking XMs Pin Configuration 1=B 2=E Package SOT23
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BCR583
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package SOT23
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BCR533
EHA07184
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BCR533
Abstract: BCW66
Text: BCR533 NPN Silicon Digital Transistor • Built in bias resistor R1= 10 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR533 Marking XCs Pin Configuration 1=B 2=E Package
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BCR533
EHA07184
BCR533
BCW66
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PDTA144
Abstract: PDTC144VMB PDTC144V
Text: 83B PDTC144VMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC144VMB
DFN1006B-3
OT883B)
PDTA144VMB.
AEC-Q101
PDTA144
PDTC144VMB
PDTC144V
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PDTC114YMB
Abstract: PDTA114YMB
Text: 83B PDTA114YMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114YMB
DFN1006B-3
OT883B)
PDTC114YMB.
AEC-Q101
PDTC114YMB
PDTA114YMB
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PDTC144V
Abstract: No abstract text available
Text: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA144VMB
DFN1006B-3
OT883B)
PDTC144VMB.
AEC-Q101
PDTC144V
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