Untitled
Abstract: No abstract text available
Text: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZ30-2
HZ20-2
HZ16-2
HZ12B2
HZ24-2
HZ36-2
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HZS3C3
Abstract: HZS3A1 HZS7A1 HZS5B2 HZS7A3 HZS11A1 HZS11A2 HZS11B1 HZS11B2 HZS11C1
Text: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZS36-2
HZS3C3
HZS3A1
HZS7A1
HZS5B2
HZS7A3
HZS11A1
HZS11A2
HZS11B1
HZS11B2
HZS11C1
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HZ7C1
Abstract: hz15 HZ11A1 HZ11A2 HZ11A3 HZ11B1 HZ11B2 HZ11B3 HZ11C1 HZ11C2
Text: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZ12B2
HZ24-2
HZ36-2
HZ7C1
hz15
HZ11A1
HZ11A2
HZ11A3
HZ11B1
HZ11B2
HZ11B3
HZ11C1
HZ11C2
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HZS5C3
Abstract: HZS11A1 HZS11A2 HZS11A3 HZS11B1 HZS11B2 HZS11B3 HZS11C1 HZS11C2 HZS11C3
Text: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener
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HZS36-2
HZS5C3
HZS11A1
HZS11A2
HZS11A3
HZS11B1
HZS11B2
HZS11B3
HZS11C1
HZS11C2
HZS11C3
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ZENER DIODE 1233
Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Text: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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REJ03G0184-0400
GRZZ0002ZC-A
ZENER DIODE 1233
GRZZ0002ZC-A
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS22
HZS24
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zener hitachi
Abstract: zener 5.1 B2 zener mark code A2 hzs6b2 Hitachi DSAUTAZ006 ECG 177 zener diode zener series hzs
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-120B
D-85622
zener hitachi
zener 5.1 B2
zener mark code A2
hzs6b2
Hitachi DSAUTAZ006
ECG 177 zener diode
zener series hzs
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HZ11
Abstract: HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27 4.7 B2 zener 121
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-117B
DO-35
HZ11
HZ12
HZ15
HZ16
HZ18
HZ20
HZ22
HZ24
HZ27
4.7 B2 zener 121
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4.7 B2 zener
Abstract: zener diode 5.6 b3 ECG 177 zener diode HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ30-2
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-117B
DO-35
4.7 B2 zener
zener diode 5.6 b3
ECG 177 zener diode
HZ11
HZ12
HZ15
HZ16
HZ18
HZ20
HZ30-2
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Hitachi DSA002725
Abstract: No abstract text available
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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ADE-208-120B
Hitachi DSA002725
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FGD2N40
Abstract: FGD2N40L
Text: FGD2N40L 400V N-Channel Logic Level IGBT Features General Description VCE SAT = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.
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FGD2N40L
O-252
FGD2N40L
FGD2N40
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HZS9A2
Abstract: HZS3C3 diode HZS2A1 HZS7A1 HZS7B3 zener HZS7A2 hzs5b2 ta HZS4A1 HZS7A3 HZS11A3
Text: HZS Series min. 27.5 SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum max. 2.9 White Cathode Band Part No. Black Color power dissipation of 400 mW are ideally suited for max. 1.9 min. 27.5
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DO-34
HZS36-2
HZS9A2
HZS3C3
diode HZS2A1
HZS7A1
HZS7B3
zener HZS7A2
hzs5b2 ta
HZS4A1
HZS7A3
HZS11A3
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512-1N4750A
Abstract: 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187
Text: ZENER DIODES CONT. For quantities greater than listed, call for quote. For quantities greater than listed, call for quote. MOUSER STOCK NO. Mfr. Mfr. Part No. 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 Package
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512-1N4749AT50A
512-BZX85C24
512-1N4750A
512-1N4750ATR
512-1N4751A
512-1N4751ATR
512-BZX85C30
DO-41
512-1N4750A
512-1N4148WS
512-BAS19
rurg3020c
SOT23 reverse voltage 600v
MMSD4448
BAW74
BAS16HT1G
SOD-80 1000V
SOT-23 187
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c2 zener renesas
Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0184-0300Z
ADE-208-120B)
c2 zener renesas
B2 Zener
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS24
HZS30
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AUTOMATIC dim dip CONTROLLER
Abstract: IR2159 C 12 PH Zener diode zener diode IPH 175C PD60169A 5V power supply transformerless 156V C 15 PH Zener diode CSD2V
Text: ADVANCED INFORMATION Data Sheet No. PD60169A IR2159 DIMMING BALLAST CONTROLLER IC Features • • • • • • • • • • Ballast control and half-bridge driver in one IC • Transformerless lamp power sensing • Closed-loop lamp power control • Closed loop preheat and ignition current control
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PD60169A
IR2159
16-pin
IR2159
complet90245
AUTOMATIC dim dip CONTROLLER
C 12 PH Zener diode
zener diode IPH
175C
PD60169A
5V power supply transformerless
156V
C 15 PH Zener diode
CSD2V
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NTE2013
Abstract: wiring a NTE2013
Text: NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units have open–collector outputs and integral diodes for inductive load transient suppression.
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NTE2011/NTE2012/NTE2013/NTE2014/NTE2015
NTE2011
NTE2015
600mA
NTE2011,
NTE2013,
NTE2014)
750mA
NTE2012,
NTE2015)
NTE2013
wiring a NTE2013
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IR2159
Abstract: half bridge 600V MOSFET driver IC 175C ignition IGBTS Ignition Transformer MOSFET driver 175C C2V10 programmable ignition timing ballast 300 watt ignition timing C2V100
Text: Data Sheet No. PD60169-B IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control
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PD60169-B
IR2159/IR21591
16-pin
IR2159
IR2159
half bridge 600V MOSFET driver IC 175C
ignition IGBTS
Ignition Transformer
MOSFET driver 175C
C2V10
programmable ignition timing
ballast 300 watt
ignition timing
C2V100
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diode Marking code v3
Abstract: No abstract text available
Text: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages
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LN100
LN100
DSFP-LN100
A031414
diode Marking code v3
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LN-100
Abstract: diode Marking code v3 LN100
Text: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages
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LN100
LN100
DSFP-LN100
NR100312
LN-100
diode Marking code v3
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PDF
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DSFP-LN100
Abstract: LN-100S diode Marking code v3 BVDSS1 high voltage shunt regulator source gate m2 ZENER DIODE
Text: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages
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LN100
LN100
DSFP-LN100
NR100312
LN-100S
diode Marking code v3
BVDSS1
high voltage shunt regulator
source gate
m2 ZENER DIODE
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PDF
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0610L
Abstract: BF162 transistor vn2222l zener diode 1.18v 300mV VN2222L converter circuit dc to Dc 2V to 12V design ideas Single-Stage Flyback thermopiles
Text: L DESIGN IDEAS J-FET-Based DC/DC Converter Starts and Runs from 300mV Supply by Jim Williams A J-FET’s self-biasing characteristic can be utilized to construct a DC/DC converter powered from as little as 300mV. Solar cells, thermopiles and single stage fuel cells, all with outputs below 600mV, are typical power
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300mV
300mV.
600mV,
LT3487
0610L
BF162
transistor vn2222l
zener diode 1.18v
VN2222L
converter circuit dc to Dc 2V to 12V
design ideas
Single-Stage Flyback
thermopiles
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C2V10
Abstract: IR2159
Text: Data Sheet No. PD60169-C IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control
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PD60169-C
IR2159/IR21591
16-pin
IR2159
100kHz
IR21591
C2V10
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60194 revC IR21592 S & (PbF) IR21593(S) & (PbF) DIMMING BALLAST CONTROL IC Features • Full lamp fault protection • Brown-out protection • Automatic restart • Micro-power startup • Zener clamped Vcc • Over-temperature protection
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PD60194
IR21592
IR21593
16-pin
16-Lead
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C2V10
Abstract: ir2159 C2V100
Text: Data Sheet No. PD60169-C IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control
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PD60169-C
IR2159/IR21591
16-pin
IR2159
IR21591
C2V10
C2V100
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PDF
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IR21592
Abstract: ZENER DIODE 5.1V power supply igbt ignition ignition IGBTS ignition mosfet Ignition Transformer IR2159 IR21593 MS-012AC V100
Text: Data Sheet No. PD60194_A IR21592 S IR21593(S) DIMMING BALLAST CONTROL IC Features • Full lamp fault protection • Brown-out protection • Automatic restart • Micro-power startup • Zener clamped Vcc • Over-temperature protection • 16-pin DIP and SOIC package types
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PD60194
IR21592
IR21593
16-pin
IR21592/IR21593
IR21592/IR21593
IR2159
MS-001A)
MS-012AC)
ZENER DIODE 5.1V power supply
igbt ignition
ignition IGBTS
ignition mosfet
Ignition Transformer
IR2159
MS-012AC
V100
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