ZXTP25020CFFTA
Abstract: TS16949 ZXTP25020CFF 079w marking 1F4
Text: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse
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ZXTP25020CFF
OT23F,
-65mV
OT23F
D-81541
ZXTP25020CFFTA
TS16949
ZXTP25020CFF
079w
marking 1F4
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pseudomorphic HEMT
Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes
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FPD2250
FPD22501
FPD2250
25mx2250m
32dBm
12GHz
42dBm
FPD2250-000
pseudomorphic HEMT
MIL-HDBK-263
InP transistor HEMT
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Untitled
Abstract: No abstract text available
Text: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse
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ZXTP25020CFF
OT23F,
-65mV
OT23F
D-81541
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FPD2250
Abstract: PAD130
Text: FPD2250 Datasheet v3.0 1.5W POWER PHEMT LAYOUT: FEATURES: • • • • 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High
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FPD2250
FPD2250
22-A114.
MIL-STD-1686
MILHDBK-263.
PAD130
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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ENN3974
2SC4735
27MHz
2084B
2SC4735]
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2SB1151L-T60-T
Abstract: 2SB1151 2SB1151L 2SB1151-T60-T 2SD1691 1K TRANSISTOR
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W Ta=25℃ *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION
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2SB1151
2SD1691.
2SB1151L
2SB1151-T60-T
2SB1151L-T60-T
O-126
QW-R204-022
2SB1151L-T60-T
2SB1151
2SB1151L
2SD1691
1K TRANSISTOR
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TRANSISTOR MARKING 1d6
Abstract: No abstract text available
Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high
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ZXTP08400BFF
OT23F,
-400V
220mV
100mA
ZXTN08400BFF
OT23F
ZXTP08400BFFTA
D-81541
TRANSISTOR MARKING 1d6
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Untitled
Abstract: No abstract text available
Text: FPD2250 Datasheet v2.1 1.5W POWER PHEMT FEATURES: • • • • LAYOUT: 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High
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FPD2250
FPD2250
22A114.
MIL-STD-1686
MIL-HDBK-263.
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TS16949
Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high
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ZXTP08400BFF
OT23F,
-400V
220mV
100mA
ZXTN08400BFF
OT23F
ZXTP08400BFFTA
D-81541
TS16949
ZXTN08400BFF
ZXTP08400BFF
ZXTP08400BFFTA
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2SC4735
Abstract: 2084B
Text: Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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EN3974
2SC4735
27MHz
2084B
2SC4735]
2SC4735
2084B
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ZXTN07012EFF
Abstract: ZXTP07012EFF ZXTP07012EFFTA
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
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EC12T
Abstract: 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497
Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.
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ENN3974
2SC4735
27MHz
2084B
2SC4735]
EC12T
2SC4735
ITR07494
ITR07495
ITR07496
ITR07497
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Untitled
Abstract: No abstract text available
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
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ZXTN08400BFF
Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high
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ZXTN08400BFF
OT23F,
175mV
500mA
ZXTP08400BFF
OT23F
ZXTN08400BFF
ZXTN08400BFFTA
ZXTP08400BFF
sot23 6 device Marking
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TS16949
Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
TS16949
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
2V150
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Zetex T 705
Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Text: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high
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ZXTP08400BFF
OT23F,
-400V
220mV
100mA
ZXTN08400BFF
OT23F
ZXTP08400BFFTA
D-81541
Zetex T 705
TRANSISTOR MARKING 1d6
TS16949
ZXTN08400BFF
ZXTP08400BFF
ZXTP08400BFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the
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ZXTP19020CFF
OT23F,
100mA
ZXTN19020CFF
OT23F
D-81541
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Untitled
Abstract: No abstract text available
Text: S0 T89 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX704 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SWITCHING PARTMARKING DETAIL - 704 ABSOLUTE MAXIMUM RATINGS VALUE UNIT -120
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FCX704
-10mA*
-10mA,
-100mA,
300/iS.
DS150
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Untitled
Abstract: No abstract text available
Text: SOT89 IMPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SW ITCHING PARTMARKING DETAIL - 6 0 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL
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FCX604
DS147
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transistor ztx
Abstract: ZTX749 SE157
Text: PNP Silicon Planar Medium Power Transistor ZTX 749 FEATURES • • • • • • 1.5W power dissipation at Tamb= 25°C* 2 A continuous lc Excellent gain characteristics up to 6A pulsed Low saturation voltages Fast switching NPN complementary type available
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300ns.
SE158
ZTX749
SE161
100mA
SE162
transistor ztx
ZTX749
SE157
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ZTX605
Abstract: SE109
Text: NPN Silicon Planar Medium Power Darlington Transistors ZTX 604 ZTX605 FEATURES • • • • • 1.5W power dissipation 1A continuous collector current 4 A peak collector current Guaranteed hFE specified up to 2A Fast switching DESCRIPTION The ZT X6 04 and
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ZTX605
ZTX605
ZTX604
100mA
2TX60A/5
SE113
SE109
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTB1151 EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTD1691. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage
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KTB1151
KTD1691.
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KTD1691
Abstract: KTB1151
Text: SEMICONDUCTOR TECHNICAL DATA KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTB1151. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage
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KTD1691
KTB1151.
KTD1691
KTB1151
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ferranti
Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching
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ZTX600
ZTX601
ZTX601
100mA
100mA
ferranti
Scans-00107859
Ferranti Semiconductors
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