SD210DE
Abstract: A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear
Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5
|
Original
|
SD-SST210/214
SD210DE
SD214DE
SST210
SST214
1500C
1250C
SD210DE
A 4042 B
high speed Zener Diode
SD5000
SD214DE
SST210
SST214
SD214DE linear
|
PDF
|
N CHANNEL jfet Low Noise Audio Amplifier
Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5
|
Original
|
SD-SST210/214
SD210DE
SD214DE
SST210
SST214
N CHANNEL jfet Low Noise Audio Amplifier
diode ZENER A8
P-Channel Depletion Mosfets
N CHANNEL jfet ultra Low Noise Audio Amplifier
2N4351
bare die zener
ultra FAST DMOS FET Switches
sst210 sot-143
|
PDF
|
zener diode 15 v
Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
|
Original
|
SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
zener diode 15 v
ultra low igss pA
SD5400CY
sst211 sot-143
5401 transistor datasheet
SD5000 quad
sd5000i
SD5000N
SD5001N
SD5401CY
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max ( ) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N
|
Original
|
SD5000/5001/5400/5401
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
25-year-old,
|
PDF
|
d312
Abstract: SD5000I AN301 SD5000N SD5001N SD5400CY SD5401CY SD5000 SD5401
Text: SD5000/5400 Series Siliconix NĆChannel Lateral DMOS FETs SD5000I SD5000N SD5001N Product Summary Part Number V BR DS Min (V) SD5400CY SD5401CY VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
|
Original
|
SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
d312
SD5000I
AN301
SD5000N
SD5001N
SD5400CY
SD5401CY
SD5000
SD5401
|
PDF
|
sd5000
Abstract: SD5000N SD5400CY SD5401 sst211 sot-143 SD5000I SD5001N SD5401CY SD5000 SILICONIX
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
|
Original
|
SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
sd5000
SD5000N
SD5400CY
SD5401
sst211 sot-143
SD5000I
SD5001N
SD5401CY
SD5000 SILICONIX
|
PDF
|
SD215DE
Abstract: SD211 SD211DE SD213DE SD214 SST211 SST213 SST215 #70607
Text: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V
|
Original
|
SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
SD215DE
SD211
SD211DE
SD213DE
SD214
SST211
SST213
SST215
#70607
|
PDF
|
SD5000N
Abstract: SD5000 SD5000I SD5001N SD5400CY SD5401CY #70607 SD5400
Text: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V
|
Original
|
SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
SD5000N
SD5000
SD5000I
SD5001N
SD5400CY
SD5401CY
#70607
SD5400
|
PDF
|
sst211 vishay
Abstract: SD5400CY sd5400 High-Speed Analog N-Channel DMOS FETs -TO-72
Text: SD5400CY/SD5401CY Vishay Siliconix N-Channel Lateral DMOS FETs PRODUCT SUMMARY Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5400CY 20 1.5 75 @ VGS = 5 V 0.5 2 SD5401CY 10 1.5 75 @ VGS = 5 V 0.5 2 FEATURES BENEFITS
|
Original
|
SD5400CY/SD5401CY
SD5400CY
SD5401CY
S-00529--Rev.
03-Apr-00
sst211 vishay
sd5400
High-Speed Analog N-Channel DMOS FETs -TO-72
|
PDF
|
SST211
Abstract: SST215 SD215DE SD211 SD211DE SD213DE SD214 SST213 D5 marking array-SD5000
Text: SD211DE/SST211 Series N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD211DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V
|
Original
|
SD211DE/SST211
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
SST211
SST215
SD215DE
SD211
SD211DE
SD213DE
SD214
SST213
D5 marking
array-SD5000
|
PDF
|
2SK2037
Abstract: No abstract text available
Text: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.
|
Original
|
2SK2037
2SK2037
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.
|
Original
|
2SK2037
SC-70
|
PDF
|
sd211de
Abstract: No abstract text available
Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N
|
Original
|
SD5000/5001/5400/5401
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
25-year-old,
sd211de
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2034
|
PDF
|
|
|
SD5001I
Abstract: SD5400CY
Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N
|
Original
|
SD5000/5001/5400/5401
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
25-year-old,
SD5001I
|
PDF
|
SD214DE
Abstract: SD5000 quad ultra low igss pA SD210DE
Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D
|
Original
|
SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
SD214DE
SD5000 quad
ultra low igss pA
SD210DE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2035
|
PDF
|
SD210DE
Abstract: SD210 SST211 SD214DE #70607
Text: SD210DE/214DE N-Channel Lateral DMOS FETs Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10 V 0.5 2 Features Benefits Applications D D D
|
Original
|
SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
SD210DE
SD210
SST211
SD214DE
#70607
|
PDF
|
2SK2033
Abstract: No abstract text available
Text: 2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2033
O-236MOD
SC-59
2SK2033
|
PDF
|
2SK2035
Abstract: No abstract text available
Text: 2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2035
2SK2035
|
PDF
|
2SK2034
Abstract: No abstract text available
Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2034
2SK2034
|
PDF
|
2sk2036
Abstract: No abstract text available
Text: 2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Analog Switching Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.28 s typ.
|
Original
|
2SK2036
SC-59
2sk2036
|
PDF
|
2SK2009
Abstract: No abstract text available
Text: 2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5~1.5 V • Excellent switching times: ton = 0.06 s typ.
|
Original
|
2SK2009
O-236MOD
2SK2009
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage.: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.16 s typ.
|
Original
|
2SK2034
|
PDF
|
