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    1.2 MICRON CMOS PROCESS FAMILY Search Results

    1.2 MICRON CMOS PROCESS FAMILY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    1.2 MICRON CMOS PROCESS FAMILY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1.2 Micron CMOS Process Family

    Abstract: 1.2 micron cmos P-MOSFET metal oxide in capacitor vertical PNP metal resistor 0.8 Micron CMOS Process Family 0.03 um CMOS technology
    Text: 1.2 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 2.4 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • Twin-tub • • 1.2µm 5volts Units Metal I pitch width/space 1.4 / 1.0


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    1.2 micron cmos

    Abstract: 1.2 Micron CMOS Process Family 12-micron CMOS Process Family
    Text: 1.2 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 2.4 µm Poly and Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library


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    1.2 Micron CMOS Process Family

    Abstract: No abstract text available
    Text: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,


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    1.2 Micron CMOS Process Family

    Abstract: FTI-12 P-MOSFET 4800 mosfet mosfet 4800
    Text: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,


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    CMOS Process Family

    Abstract: 1.5um cmos process family
    Text: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal


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    Untitled

    Abstract: No abstract text available
    Text: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to


    OCR Scan     		BHDA08A BHAD12A BHSD14A PDF

    ER142503.6V

    Abstract: ER14250-VB3.6V
    Text: CMOS- CSI 1.2 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE Family Custom Driver Device MCD00002 Lot # 66210891 Package WSOIC Vcc 5.6V Qty 115 Time Point Failures Act Act Act Total Hrs Fails Hrs Fails Hrs Fails Dev. Hrs 168 500 1000 0 115000


    Original     		MCD00002 MIC2202 MIC2202BMM 3A18196 3A10032MNF 3A10034MNE MIC2203 MIC2203BMM ER142503.6V ER14250-VB3.6V PDF

    datasheet VMOS Transistor

    Abstract: CMOS Process Family 1.2 Micron CMOS Process Family
    Text: 1.5 Micron CMOS Process Family Features • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option • 1.2 Volts Very Low Voltage Option • 5.5 Volts Maximum Operating Voltage • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • ProToDuctionTM Option for low cost prototypes


    Original     		150mm datasheet VMOS Transistor CMOS Process Family 1.2 Micron CMOS Process Family PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5 Micron CMOS Process Family Features • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option • 1.2 Volts Very Low Voltage Option • 5.5 Volts Maximum Operating Voltage • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • ProToDuctionTM Option for low cost prototypes


    Original     		150mm PDF

    1.2 Micron CMOS Process Family

    Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process
    Text: 1.5 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 1.5µm Process Parameters 5volts & 3volts


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    micron resistor TCR

    Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
    Text: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from


    Original     		50x50 micron resistor TCR CMOS Process Family micron resistor 1.2 Micron CMOS Process Family PDF

    1.2 Micron CMOS Process Family

    Abstract: CMOS Process Family
    Text: 5 Micron CMOS Process Family  February 1996 Process Parameters Features • • Double Poly / Double Metal 10 µm Poly and Metal Pitch 5µm 12 volts Process Parameters Units Metal I pitch width/space 5/5 µm Description Poly pitch (width/space) 5/5 µm


    Original     		50x50 1.2 Micron CMOS Process Family CMOS Process Family PDF

    CMOS Process Family

    Abstract: 0.6 um cmos process
    Text: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module


    Original     		-10mA CMOS Process Family 0.6 um cmos process PDF

    p-mosfet

    Abstract: Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters
    Text: 4 Micron CMOS Process Family  June 1995 Process Parameters Features 4µm 4µm • Double Poly / Double Metal • 8 µm Poly and Metal Pitch • 10 Volts Maximum Operating Voltage Metal I pitch width/space 4/4 4 /4 µm • 15 Volts High Voltage Option


    Original     		-10mA p-mosfet Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters PDF

    1.2 Micron CMOS Process Family

    Abstract: 0.8 Micron CMOS Process Family CMOS Process Family 08um
    Text: 0.8 Micron CMOS Process Family  October 1995 Features • • • • • Process Parameters Double Poly/Double Metal 1.7µm Poly and 2.1µm Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuction Option for prototype Description


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    cmos transistor 0.35 um

    Abstract: 0.6 um cmos process transistor BIPOLAR
    Text: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact


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    mosfet 4800

    Abstract: No abstract text available
    Text: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact


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    S-MOS navnet

    Abstract: S-MOS asic B16c F1841
    Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel


    OCR Scan     		SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841 PDF

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan     		AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent PDF

    TTL 7466

    Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
    Text: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs


    OCR Scan     		SLA9000PIUS SLA9000Plus F240-16 TTL 7466 B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: AUA 53 HARRIS Automated Universal Array Radiation Hardened CM O S/SOS Family December 1990 D escription Features • Radiation Hardened ►Total D o s e .> 1 x 1 0 Rads Si ►Survivability . > 1 x 1 0 12 Rads (Si)/s


    OCR Scan     		PDF

    TTL 740 NAND propagation delay

    Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
    Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities


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    NA21 transistor

    Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
    Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies


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    2500ECL

    Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
    Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.


    OCR Scan     		BR334/D 2500ECL Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca PDF